goford semiconductor

G10N10A from Goford Semiconductor is a N100V,RD(MAX)130MOHM@10V,TO-252

G10P03 from Goford Semiconductor is a P30V,RD(MAX)<26M@-4.5V,RD(MAX)<3

G110N06K from Goford Semiconductor is a N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

G110N06T from Goford Semiconductor is a N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

G11S from Goford Semiconductor is a P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX

G120P03S2 from Goford Semiconductor is a P-30V,-16A,RD(MAX)<14M@-10V,VTH-

G12P03D3 from Goford Semiconductor is a P30V,RD(MAX)<20M@-10V,RD(MAX)<26

G12P04K from Goford Semiconductor is a P40V,RD(MAX)<35M@-10V,RD(MAX)<45

G12P06K from Goford Semiconductor is a P-60V,-12A,RD(MAX)<75M@-10V,VTH-

G12P10K from Goford Semiconductor is a P100V,RD(MAX)<200M@-10V,RD(MAX)<

G12P10KE from Goford Semiconductor is a P-100V,ESD,-12A,RD(MAX)<200M@-10

G12P10TE from Goford Semiconductor is a P-100V,-12A,RD(MAX)<200M@-10V,VT

G130N06M from Goford Semiconductor is a N60V, 90A,RD<12M@10V,VTH1.0V~2.4

G130N06S from Goford Semiconductor is a MOSFET, N-CH,60V,9A,RD(MAX)<12M@

G130N06S2 from Goford Semiconductor is a MOSFET, N+N-CH,60V,9A,RD(MAX)<13

G13P04S from Goford Semiconductor is a P-40V,-13A,RD(MAX)<15M@-10V,VTH-

G15N06K from Goford Semiconductor is a N-CH, 60V,15A,RD(MAX)<45M@10V,RD

G15N10C from Goford Semiconductor is a N100V,RD(MAX)<110M@10V,RD(MAX)<1

G15P04K from Goford Semiconductor is a P40V,RD(MAX)<39M@-10V,RD(MAX)<70

G160N04K from Goford Semiconductor is a N40V, 25A,RD<15M@10V,VTH1.0V~2.0

G160P03KI from Goford Semiconductor is a P-30V,-30A,RD(MAX)<16M@-10V,VTH-

G16N03S from Goford Semiconductor is a N30V, 16A,RD<10M@10V,VTH1.0V~2.5

G16P03D3 from Goford Semiconductor is a P30V,RD(MAX)<12M@-10V,RD(MAX)<18

G16P03S from Goford Semiconductor is a P30V,RD(MAX)<12M@-10V,RD(MAX)<18

G170P02D2 from Goford Semiconductor is a P-20V,-16A,RD(MAX)<17M@-4.5V,VTH

G170P03D3 from Goford Semiconductor is a P-30V, -20A,RD<18M@-10V,VTH-1V~-

G170P03S2 from Goford Semiconductor is a P-30V, -9A,RD<18M@-10V,VTH-1V~-2

G180N06S2 from Goford Semiconductor is a MOSFET, N-CH, 60V,8A,SOP-8DUAL

G18P03D3 from Goford Semiconductor is a P30V,RD(MAX)<10M@-10V,RD(MAX)<15

G18P03S from Goford Semiconductor is a P-30V,-15A,RD(MAX)<10M@-10V,VTH-

G1K1P06HH from Goford Semiconductor is a P-60V,-4.5A,RD(MAX)<110M@-10V,VT

G1K1P06LL from Goford Semiconductor is a P-60V,-4A,RD(MAX)<110M@-10V,VTH-

G1K2C10S2 from Goford Semiconductor is a NP100V, 3A,RD<130M@10V,RD<200M@-

G1K3N10G from Goford Semiconductor is a N100V, 5A,RD<130M@10V,VTH1V~2V,

G1K8P06S2 from Goford Semiconductor is a P-60V,-3.2A,RD(MAX)<170M@-10V,VT

G1NP02LLE from Goford Semiconductor is a NP20V, 1.3A/-1.1A,RD<210M@4.5V,R