Goford Semiconductor

G2002A from Goford Semiconductor is a N200V, 2A,RD<540M@10V,VTH1.0V~3.

G2003A from Goford Semiconductor is a N190V, 3A,RD<540M@10V,VTH1.0V~3.

G200P04D3 from Goford Semiconductor is a P-40V,-20A,RD(MAX)<75M@-10V,VTH-

G200P04S2 from Goford Semiconductor is a P-40V,-9A,RD(MAX)<20M@-10V,VTH-1

G2012 from Goford Semiconductor is a N20V,RD(MAX)<12M@4.5V,RD(MAX)<18

G2014 from Goford Semiconductor is a N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M

G20N03D2 from Goford Semiconductor is a N30V,RD(MAX)<24M@10V,RD(MAX)<29M

G20N03K from Goford Semiconductor is a N30V,RD(MAX)<20M@10V,RD(MAX)<24M

G20N06D52 from Goford Semiconductor is a N60V,RD(MAX)<30M@10V,RD(MAX)<40M

G20P06K from Goford Semiconductor is a P-60V, -20A,RD<45M@-10V,VTH-2V~-

G20P08K from Goford Semiconductor is a P-80V,RD(MAX)<62M@-10V,RD(MAX)<7

G20P10KE from Goford Semiconductor is a P-CH, -100V, 20A, RD(MAX)<116M@-

G220P02D2 from Goford Semiconductor is a P-20V,-8A,RD(MAX)<25M@-4.5V,VTH-

G2304 from Goford Semiconductor is a MOSFET N-CH 30V 3.6A SOT-23

G2305 from Goford Semiconductor is a P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7

G230P06K from Goford Semiconductor is a P-CH,-60V,-60A,RD(MAX)<20M@-10V,

G230P06S from Goford Semiconductor is a P-60V,-8A,RD(MAX)<23M@-10V,VTH-2

G230P06T from Goford Semiconductor is a P-60V,-60A,RD(MAX)<20M@-10V,VTH-

G2312 from Goford Semiconductor is a N20V,RD(MAX)<18M@10V,RD(MAX)<20M

G23N06K from Goford Semiconductor is a N60V,RD(MAX)<35M@10V,RD(MAX)<45M

G250N03IE from Goford Semiconductor is a N30V,ESD 5.3A,RD<25M@10V,VTH0.5V

G25N06K from Goford Semiconductor is a N60V, 25A,RD<27M@10V,VTH1.0V~2.5

G26P04D5 from Goford Semiconductor is a P40V,RD(MAX)<18M@-10V,RD(MAX)<22

G26P04K from Goford Semiconductor is a P-40V,RD(MAX)<18M@-10V,RD(MAX)<2

G28N02T from Goford Semiconductor is a N20V, 28A, RD<7.3M@4.5V,VTH0.5V~

G28N03D3 from Goford Semiconductor is a N30V,RD(MAX)<12M@10V,RD(MAX)<18M

G29 from Goford Semiconductor is a P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4

G2K2P10S2E from Goford Semiconductor is a P-100V,ESD,-3.5A,RD(MAX)<200M@-1

G2K2P10SE from Goford Semiconductor is a P-100V, 3.5A,RD<200M@-10V,VTH1V~

G2K3N10G from Goford Semiconductor is a N100V, 2.5A,RD<220M@10V,VTH1V~2V

G2K3N10H from Goford Semiconductor is a MOSFET, N-CH,100V, 2A,SOT-223

G2K3N10L6 from Goford Semiconductor is a N100V, 3A,RD<220M@10V,VTH1.0V~2.

G2K8P15K from Goford Semiconductor is a P-150V,-12A,RD(MAX)<310M@-10V,VT

G2K8P15S from Goford Semiconductor is a P-150V,-2.2A,RD(MAX)<310M@-10V,V

G300P06D5 from Goford Semiconductor is a P-60V,-40A,RD(MAX)<30M@-10V,VTH-

G300P06S from Goford Semiconductor is a P-CH,-60V,-12A,RD(MAX)<30M@-10V,