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Discrete Semiconductor Products
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(Total Part Numbers : )| Action | Part No. | Manufacturer | Qty | Description | Status | Alternate Part No. |
|---|---|---|---|---|---|---|
| Request | 5961-00-159-6582 | Microsemi Corporation | Bulk | The 5961-00-159-6582 is a high-reliability, silicon NPN transistor designed for use in high-speed switching and amplifier applications. It operates in a broad frequency range and features excellent gain ch... | Obsolete | JTX2N2326 - JANTX2N2326 - 2N2326JTX - 5961001596582 |
| Request | AON6994 | Alpha & Omega Semiconductor Inc. | 3,000 - Tape and Reel | The AON6994 is an N-Channel Enhancement Mode Power MOSFET designed for high efficiency and low power loss applications. This device features a low on-resistance of 1.8 mΩ (at 10V) and high current handling... | Active | AON6994 - 785-1748-1 - 785-1748-2 - 785-1748-6 - NCP81610A |
| Request | BLF147 | Ampleon USA Inc. | 20 per pack | The BLF147 is a high-power, silicon N-channel MOSFET transistor designed for applications in the VHF (Very High Frequency) band, particularly in RF power amplifiers. It operates efficiently in the frequenc... | Obsolete | 933930000112 - BLF147 - BLF147,112 |
| Request | CGH31240F | MACOM Technology Solutions | 10 | MACOM CGH31240F is a high-power RF transistor designed for applications in telecommunications, aerospace, and defense. It operates in the S-band frequency range and is optimized for high-efficiency perform... | Active | CGH31240F - CGH31240F-AMP |
| Request | FZ600R12KE2 | Infineon Technologies | 10 Per Box | The FZ600R12KE2 is a high-power insulated gate bipolar transistor (IGBT) module designed for industrial and commercial applications requiring high efficiency and performance. This module features a maximum... | Active | FZ600R12KE2 - FZ600R12KE |
| Request | FZ600R12KE4HOSA1 | Infineon Technologies | 10 Per Box | The FZ600R12KE4HOSA1 is a high-performance IGBT module designed for industrial and power electronic applications. This insulated-gate bipolar transistor (IGBT) module operates at a maximum collector-emitte... | Active | FZ600R12KE4HOSA - FZ600R12KE4HOSA1 |
| Request | IRF2204 | Infineon Technologies | 50 per tube | The IRF2204 is a high-performance N-channel power MOSFET designed for demanding applications in industrial and automotive environments. With a maximum drain-to-source voltage (Vds) of 40V and a maximum con... | Active | 773-IRF2204 *IRF2204 INFINFIRF2204 SP001576552 - IRF2204PBF |
| Request | IRF2204PBF | Infineon Technologies | 50 per tube | The IRF2204PBF is a high-performance N-channel power MOSFET designed for demanding applications in industrial and automotive environments. With a maximum drain-to-source voltage (Vds) of 40V and a maximum ... | Active | 773-IRF2204PBF*IRF2204PBF INFINFIRF2204 SP001576552 - IRF2204PBF |
| Request | IXYH75N65C3DI | IXYS | 30 PER TUBE | The IXYH75N65C3D1 is a 650V, 175A N-channel insulated-gate bipolar transistor (IGBT) developed by IXYS, now part of Littelfuse. Manufactured using the GenX3 IGBT process and the eXtreme-light Punch Through... | Obsolete | IXYH75N65C3D1 - IXYH75N65C3DI - ***IXYH75N65C3D1 |
| Request | IXZR18N50B-00 | 1 | IXZR18N50B-00 by IXYS-RF | IXZR18N50B00 | ||
| Request | JANS2N3741 | Microchip Technology | 1 | The Microchip JANS2N3741 is a high-reliability NPN silicon power transistor designed for use in aerospace, military, and other mission-critical applications. It features a maximum collector-emitter voltag... | Active | JANS2N3741 - JS2N3741 - 2N3741JANS - 2N3741 -2N37410 |
| Request | JANTX2N6274 | Microchip Technology | 1 per pack | The JANTX2N6274 is a high-reliability NPN silicon power transistor designed for use in demanding military, aerospace, and industrial applications. It is qualified to the MIL-PRF-19500 standard, ensuring ro... | Active | JTX2N6274 - 2N6274JANTX - 2N6274JTX - 15535-MIL | JANTX2N6274 |
| Request | JANTX2N2326 | Microsemi Corporation | 1 | The JTX2N2326 is a high-reliability, silicon NPN transistor designed for use in high-speed switching and amplifier applications. It operates in a broad frequency range and features excellent gain character... | Obsolete | JTX2N2326 - JANTX2N2326 - 2N2326JTX - 5961001596582 |
| Request | MRF581 | Microsemi Corporation | 1 | The MRF581 is a high-frequency NPN silicon microwave transistor designed for use in amplifier and oscillator applications. It features high gain, low noise, and excellent performance in RF and microwave fr... | Obsolete | MRF58 - 773MRF581 - _MRF581 - MRF581MI |
| Request | SKM400GB125D | Semikron | 1 | The SKM400GB125D is a high-performance insulated-gate bipolar transistor (IGBT) module designed for applications requiring efficient power management and control. It features a dual IGBT configuration with... | Active | SKM400GB - SKM400GB125D - 400GB125D - SKM400GB125D SKM400GAL125D SKM400GAR125D |
| Request | SMBJ5924BE3 | Microchip Technology | 3,000 Tape & Reel | The SMBJ5924BE3 is a surface-mount Zener diode designed for voltage regulation and transient voltage suppression in electronic circuits. It features a DO-214AA (SMB) package, providing a compact, low-profi... | Active | SMBG5913 - SMBG5956e3, SMBJ5913 - SMBJ5956e3 - SMBJ5924BE3TR - 773-SMBJ5924BE3 |
| Request | U3D-E3/57T | Vishay General Semiconductor - Diodes Division | 850 per reel | The U3D-E3/57T is a highly reliable electronic component designed for precision and performance in industrial and commercial applications. This versatile unit is engineered with advanced materials, offerin... | Active | U3D-E3/57TGI-TR U3D-E3/57T-773 U3D-E3/57TGICT U3D-E3/57TGI | U3DE357T |
| Request | U3D-E3/9AT | Vishay General Semiconductor - Diodes Division | 3,500 per reel | The U3D-E3/9AT is a highly reliable electronic component designed for precision and performance in industrial and commercial applications. This versatile unit is engineered with advanced materials, offerin... | Active | U3D-E3/9ATGICT U3D-E3/9ATGI U3D-E3/9ATGITR U3D-E3/9AT-773 | U3DE39AT |
| Request | UFT7150 | Microsemi Corporation | UFT7150 | UFT7150 is a A diode module GP 500V 35A is an electrical component that contains diodes designed to handle up to 500 volts and 35 amperes of current. Diodes are semiconductor devices that allow current to ... | Bulk | None | UFT7150 |
| Request | UFT7150-- | Microsemi Corporation | 24 | UFT7150 by Microsemi is A diode module GP 500V 35A typically refers to a specialized electronic component used in electrical circuits. It is designed to handle a maximum voltage of 500 volts and a current ... | Obsolete | UFT7150 |
| Request | PM50CLB060 | Powerex Inc. | 1 | MOD IPM L-SER 6PAC IPM 600V 50A | unknown | PM50CLB060 |
| Request | FCAS20DN60BB | onsemi | 11 | MODULE SPM FOR SRM 600V SPM20-BC | Obsolete | FCAS20DN60BB |
| Request | FSB50325S | Fairchild Semiconductor | 450 | INTEGRATED CIRCUIT SMART POWER MOD 1.5A SPM23-BA | Obsolete | FSB50325STR | FSB50325S | FSB50325SCT | FSB50325SDKR |
| Request | FSB50550U | onsemi | 15 | INTEGRATED CIRCUIT SMART POWER MOD 2A SPM22-AD | Obsolete | FSB50550U |
| Request | FPAB50PH60 | onsemi | 10 | INTEGRATED CIRCUIT SMART POWER MOD 50A SPM27-HA | Obsolete | FPAB50PH60 |
| Request | PP150B120 | Powerex Inc. | 1 | IGBT ASSY H-BRIDGE 1200V 150A | Active | PP150B120 |
| Request | STIPNS2M50T-H | STMicroelectronics | 400 | SLLIMM-NANO SMALL LOW-LOSS INTEL | Active | STIPNS2M50TH |
| Request | PM50RLB060 | Powerex Inc. | 1 | MOD IPM L-SER 7PAC 600V 50A | unknown | PM50RLB060 |
| Request | PS11033 | Powerex Inc. | 3 | MOD IPM 3PHASE IGBT 600V 8A | Obsolete | PS11033 |
| Request | PS21964-4A | Powerex Inc. | 1 | MOD IPM 600V 15A SUPER MINI DIP | unknown | PS219644A |
| Request | AOZ5613BQI | Alpha & Omega Semiconductor Inc. | 3,000 | 20V/65A DRMOS SMOD EN CONTROL TH | Active | 785-AOZ5613BQIDKR | 785-AOZ5613BQICT | 785-AOZ5613BQITR |
| Request | FSBB20CH60L | onsemi | 60 | MODULE SPM 600V 20A SPM27-CB | Not For New Designs | FSBB20CH60L |
| Request | FSB50760SF | onsemi | 270 | MODULE SPM 600V 3.6A 23PWRDIP | Obsolete | FAIFSCFSB50760SF | 488-FSB50760SF | 2156-FSB50760SF-OS |
| Request | FNB50560TD1 | onsemi | 1 | AC MOTOR CONTROLLER, 10A | Active | 2156-FNB50560TD1 | ONSFSCFNB50560TD1 |
| Request | PM75CLA120 | Powerex Inc. | 10 | MOD IPM L-SERIES 1200V 75A | Obsolete | PM75CLA120 |
| Request | PS219B3-AS | Powerex Inc. | 1 | MOD DIPIPM 10A 600V SUPER MINI | unknown | PS219B3AS | PS219B3-AS | 835-1135 |
| Request | FPAB30BH60B | onsemi | 60 | MODULE SPM 600V 30A 27PWRDIP | Not For New Designs | 2156-FPAB30BH60B-OS | FPAB30BH60B | FPAB30BH60BOS | ONSONSFPAB30BH60B |
| Request | PM100CL1B060 | Powerex Inc. | 1 | MOD IPM L1 100A 600V | unknown | PM100CL1B060 |
| Request | FSB50825TB2 | Fairchild Semiconductor | 15 | SMART POWER MODULE 23PIN SPM23-A | Active | ONSFSCFSB50825TB2 | 2156-FSB50825TB2 |
| Request | JAN1N5283UR-1 | Microchip Technology | 1 | DIODE CUR REG 100V 242UA 500MW | unknown | 1086-18773-MIL | 1086-18773 | JAN1N5283UR1 |
| Request | PM50RLA120 | Powerex Inc. | 10 | MOD IPM L-SER 7PAC 1200V 50A | Obsolete | PM50RLA120 |
| Request | FSBM15SM60A | Fairchild Semiconductor | 48 | AC MOTOR CONTROLLER, 30A, HYBRID | Active | FAIFSCFSBM15SM60A | 2156-FSBM15SM60A |
| Request | 1N5285 | Solid State Inc. | 10 | DIODE CUR REG .27MA DO35 | Active | 1N5285 |
| Request | FSBM10SH60 | onsemi | 48 | INTEGRATED CIRCUIT SMART POWER MOD 10A SPM32-AA | Obsolete | FSBM10SH60 |
| Request | FSBM10SH60 | onsemi | 48 | INTEGRATED CIRCUIT SMART POWER MOD 10A SPM32-AA | Obsolete | FSBM10SH60 |
| Request | NFAL3512L5B | onsemi | 6 | INTELLIGENT POWER MODULE, SPM49, | Obsolete | NFAL3512L5B |
| Request | NFAL3512L5B | onsemi | 6 | INTELLIGENT POWER MODULE, SPM49, | Obsolete | NFAL3512L5B |
| Request | PM100CL1A060 | Powerex Inc. | 1 | MOD IPM L1 100A 600V | unknown | PM100CL1A060 |
| Request | PM100CL1A060 | Powerex Inc. | 1 | MOD IPM L1 100A 600V | unknown | PM100CL1A060 |
| Request | FSB50250UTD | onsemi | 1 | AC MOTOR CONTROLLER, 2.8A | Active | FAIFSCFSB50250UTD | 2156-FSB50250UTD |
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