MX0912B351Y

MX0912B351Y is a The MX0912B351Y is an NPN silicon planar epitaxial microwave power transistor designed for high-power applications in the 960 to 1,215 MHz frequency range, such as TACAN systems. Housed in a SOT439A metal-ceramic flange package with the base connected to the flange, it operates in a common base configuration and is specified for Class C operation. Key features include an interdigitated structure for high emitter efficiency, diffused emitter ballasting resistors ensuring excellent current sharing and high VSWR tolerance, gold metallization for stable characteristics and extended lifetime, and a multicell geometry that balances power dissipation with low thermal resistance. The transistor delivers a typical output power of 375 W with a gain of 7.6 dB and a collector efficiency of 47% under specified pulse conditions manufactured by Ampleon USA Inc.. For full specifications, datasheets, and availability, use the product details above or submit an request.

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