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SKU IMW65R072M1HXKSA1

IMW65R072M1HXKSA1

Original price $4.64 - Original price $4.64
Original price
$4.64
$4.64 - $4.64
Current price $4.64
Availability:
Low stock

The IMW65R072M1HXKSA1 from Infineon Technologies is a SiC trench N-channel MOSFET rated 650 V and 26 A (Tc) with 96 W (Tc) power dissipation, in a through-hole PG-TO247-3-41 package.

Series: CoolSIC™ M1
Base Number: IMW65R072
Package: Tube
Standard Package: 30
RoHS: ROHS3 Compliant
REACH: Unaffected
MSL: Unlimited
ECCN: EAR99
HTSUS: 8541.29.0095

Discrete Semiconductor Products / Transistors / FETs - MOSFETs

Type: FETs - MOSFETs
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Additional Details

COLOR:


STATUS: Active
PACKAGING: Tube
PER PACK: 30
MNF: Infineon Technologies
ALT PART: 448-IMW65R072M1HXKSA1 | SP005398438
OTHER:
MSL: Unlimited
RoHS: ROHS3 Compliant
REACH: Unaffected
HTSUS: 8541.29.0095
ECCN: EAR99

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