IMW65R072M1HXKSA1
The IMW65R072M1HXKSA1 from Infineon Technologies is a SiC trench N-channel MOSFET rated 650 V and 26 A (Tc) with 96 W (Tc) power dissipation, in a through-hole PG-TO247-3-41 package.
Series: CoolSIC™ M1
Base Number: IMW65R072
Package: Tube
Standard Package: 30
RoHS: ROHS3 Compliant
REACH: Unaffected
MSL: Unlimited
ECCN: EAR99
HTSUS: 8541.29.0095
Discrete Semiconductor Products / Transistors / FETs - MOSFETs
Additional Details
COLOR:
STATUS: Active
PACKAGING: Tube
PER PACK: 30
MNF: Infineon Technologies
ALT PART:
OTHER:
MSL: Unlimited
RoHS: ROHS3 Compliant
REACH: Unaffected
HTSUS: 8541.29.0095
ECCN: EAR99