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SKU SI8429DB-T1-E1

SI8429DB-T1-E1

Original price $1.96 - Original price $1.96
Original price
$1.96
$1.96 - $1.96
Current price $1.96
Availability:
Low stock

The SI8429DB-T1-E1 from Vishay Siliconix is a P-channel MOSFET rated 8 V and 11.7 A (Tc), with 2.77 W (Ta) and 6.25 W (Tc) power dissipation, in a surface-mount 4-Microfoot package.

Series: TrenchFET®
Base Number: SI8429
Package: Tape & Reel or Cut Tape
Standard Package: 3,000
RoHS: ROHS3 Compliant
REACH: Unaffected
MSL: Unlimited
ECCN: EAR99
HTSUS: 8541.29.0095

Discrete Semiconductor Products / Transistors / FETs - MOSFETs

Type: FETs - MOSFETs
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Additional Details

COLOR:


STATUS: Active
PACKAGING: Tape & Reel or Cut Tape
PER PACK: 3,000
MNF: Vishay Siliconix
ALT PART: SI3900DVT1GE3 | SI3900DV-T1-GE3CT | SI3900DV-T1-GE3DKR | SI3900DV-T1-GE3TR
OTHER:
MSL: Unlimited
RoHS: ROHS3 Compliant
REACH: Unaffected
HTSUS: 8541.29.0095
ECCN: EAR99

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