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Search results for “SID1181”

IDSS-08-S-03.00-T-P01-G

Samtec Inc.
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IDSS-08-S-03.00-T-P01-G from Samtec Inc. is a INSULATION DISPLACEMENT SOCKET C

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IDSD-02-D-18.00-T-P01-G

Samtec Inc.
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IDSD-02-D-18.00-T-P01-G from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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IDSD-10-S-15.00-G-B01

Samtec Inc.
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IDSD-10-S-15.00-G-B01 from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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IDSD-08-S-10.00-B04

Samtec Inc.
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IDSD-08-S-10.00-B04 from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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IDSD-08-D-99.00-T-G by Samtec Inc. - INSULATION DISPLACEMENT TERMINAL

IDSD-08-D-99.00-T-G

Samtec Inc.
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IDSD-08-D-99.00-T-G from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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SPP11N60S5HKSA1 by Infineon Technologies - MOSFET N-CH 650V 11A TO220-3

SPP11N60S5HKSA1

Infineon Technologies
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SPP11N60S5HKSA1 from Infineon Technologies is a MOSFET N-CH 650V 11A TO220-3

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IDD05SG60C by Infineon Technologies - DIODE SIL CARB 600V 5A TO252-3

IDD05SG60C

Infineon Technologies
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IDD05SG60C from Infineon Technologies is a DIODE SIL CARB 600V 5A TO252-3

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IRS21171SPBF by Infineon Technologies - IC GATE DRVR HIGH-SIDE 8SOIC

IRS21171SPBF

Infineon Technologies
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IRS21171SPBF from Infineon Technologies is a IC GATE DRVR HIGH-SIDE 8SOIC

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PTFA181001FV4XWSA1 by Infineon Technologies - IC FET RF LDMOS 100W H-37248-2

PTFA181001FV4XWSA1

Infineon Technologies
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PTFA181001FV4XWSA1 from Infineon Technologies is a IC FET RF LDMOS 100W H-37248-2

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IDV02S60CXKSA1 by Infineon Technologies - DIODE SIL CARB 600V 2A TO220-2FP

IDV02S60CXKSA1

Infineon Technologies
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IDV02S60CXKSA1 from Infineon Technologies is a DIODE SIL CARB 600V 2A TO220-2FP

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STK11C68-SF45ITR by Infineon Technologies - IC NVSRAM 64KBIT PARALLEL 28SOIC

STK11C68-SF45ITR

Infineon Technologies
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STK11C68-SF45ITR from Infineon Technologies is a IC NVSRAM 64KBIT PARALLEL 28SOIC

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IRS21271PBF by Infineon Technologies - IC GATE DRVR HIGH-SIDE 8DIP

IRS21271PBF

Infineon Technologies
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IRS21271PBF from Infineon Technologies is a IC GATE DRVR HIGH-SIDE 8DIP

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IDSD-20-D-18.00-T-P01-G

Samtec Inc.
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IDSD-20-D-18.00-T-P01-G from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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DSC1101DI5-050.0000 by Microchip Technology - MEMS OSC XO 50.0000MHZ CMOS SMD

DSC1101DI5-050.0000

Microchip Technology
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DSC1101DI5-050.0000 from Microchip Technology is a MEMS OSC XO 50.0000MHZ CMOS SMD

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IDSS-12-D-10.00-T-P01-G

Samtec Inc.
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IDSS-12-D-10.00-T-P01-G from Samtec Inc. is a INSULATION DISPLACEMENT SOCKET C

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BLA1011-2,112 by Ampleon USA Inc. - RF FET LDMOS 75V 16DB SOT538A

BLA1011-2,112

Ampleon USA Inc.
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BLA1011-2,112 from Ampleon USA Inc. is a RF FET LDMOS 75V 16DB SOT538A

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HMPP-389T-TR1 by Broadcom Limited - RF DIODE PIN 100V MINIPAK

HMPP-389T-TR1

Broadcom Limited
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HMPP-389T-TR1 from Broadcom Limited is a RF DIODE PIN 100V MINIPAK

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HSMP-389D-TR2G by Broadcom Limited - RF DIODE PIN 128V SOT143-4

HSMP-389D-TR2G

Broadcom Limited
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HSMP-389D-TR2G from Broadcom Limited is a RF DIODE PIN 128V SOT143-4

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IDH05SG60CXKSA1 by Infineon Technologies - DIODE SIL CARB 600V 5A TO220-2-2

IDH05SG60CXKSA1

Infineon Technologies
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IDH05SG60CXKSA1 from Infineon Technologies is a DIODE SIL CARB 600V 5A TO220-2-2

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D400N12BXPSA1 by Infineon Technologies - DIODE GEN PURP 1.2KV 450A

D400N12BXPSA1

Infineon Technologies
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D400N12BXPSA1 from Infineon Technologies is a DIODE GEN PURP 1.2KV 450A

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BB639CE7908HTSA1 by Infineon Technologies - DIODE VARIABLE 30V 20MA SOD-323

BB639CE7908HTSA1

Infineon Technologies
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BB639CE7908HTSA1 from Infineon Technologies is a DIODE VARIABLE 30V 20MA SOD-323

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SI4461-B0B-FM by Silicon Labs - IC RF TXRX+MCU ISM<1GHZ 20VFQFN

SI4461-B0B-FM

Silicon Labs
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SI4461-B0B-FM from Silicon Labs is a IC RF TXRX+MCU ISM<1GHZ 20VFQFN

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JANS1N4981.TR by Semtech Corporation - 5 W, VOLTAGE REGULATOR DIODE (ZE

JANS1N4981.TR

Semtech Corporation
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JANS1N4981.TR from Semtech Corporation is a 5 W, VOLTAGE REGULATOR DIODE (ZE

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HSDL-7001 by Lite-On Inc. - IC ENCODER/DECODER IRDA 16-SOIC

HSDL-7001

Lite-On Inc.
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HSDL-7001 from Lite-On Inc. is a IC ENCODER/DECODER IRDA 16-SOIC

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