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71V124HSA10PH by IDT, Integrated Device Technology Inc - IC SRAM 1MBIT PARALLEL 32TSOP II

71V124HSA10PH

IDT, Integrated Device Technology Inc
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71V124HSA10PH from IDT, Integrated Device Technology Inc is a IC SRAM 1MBIT PARALLEL 32TSOP II

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ISPGAL22V10AV-75LNI by Lattice Semiconductor Corporation - IC PLD 10MC 7.5NS 32QFN

ISPGAL22V10AV-75LNI

Lattice Semiconductor Corporation
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ISPGAL22V10AV-75LNI from Lattice Semiconductor Corporation is a IC PLD 10MC 7.5NS 32QFN

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BZD27C18PHM2G by Taiwan Semiconductor Corporation - DIODE ZENER 17.95V 1W SUB SMA

BZD27C18PHM2G

Taiwan Semiconductor Corporation
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BZD27C18PHM2G from Taiwan Semiconductor Corporation is a DIODE ZENER 17.95V 1W SUB SMA

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IPG20N06S3L-23 by Infineon Technologies - MOSFET 2N-CH 55V 20A TDSON-8

IPG20N06S3L-23

Infineon Technologies
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IPG20N06S3L-23 from Infineon Technologies is a MOSFET 2N-CH 55V 20A TDSON-8

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IRF737LCPBF by Vishay Siliconix - MOSFET N-CH 300V 6.1A TO220AB

IRF737LCPBF

Vishay Siliconix
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IRF737LCPBF from Vishay Siliconix is a MOSFET N-CH 300V 6.1A TO220AB

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IRKH142/08

Vishay General Semiconductor - Diodes Division
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IRKH142/08 from Vishay General Semiconductor - Diodes Division is a SCR DBL LOSCR 800V 140A INTAPAK

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VS-GT75NP120N

Vishay General Semiconductor - Diodes Division
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VS-GT75NP120N from Vishay General Semiconductor - Diodes Division is a IGBT MOD 1200V 150A INT-A-PAK

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MG800J2YS50A

Powerex Inc.
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MG800J2YS50A from Powerex Inc. is a IGBT MOD 600V 800A 2900W

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TE0715-04-30-3E by Trenz Electronic GmbH - IC SOC MODULE 1GB DDR3L

TE0715-04-30-3E

Trenz Electronic GmbH
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TE0715-04-30-3E from Trenz Electronic GmbH is a IC SOC MODULE 1GB DDR3L

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IRG4RC10UDTRRP by International Rectifier - ULTRAFAST COPACK IGBT W/ULTRAFAS

IRG4RC10UDTRRP

International Rectifier
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IRG4RC10UDTRRP from International Rectifier is a ULTRAFAST COPACK IGBT W/ULTRAFAS

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AUIRFS3207Z by International Rectifier - MOSFET N-CH 75V 120A D2PAK

AUIRFS3207Z

International Rectifier
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AUIRFS3207Z from International Rectifier is a MOSFET N-CH 75V 120A D2PAK

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CY7C1314BV18-250BZXC

Infineon Technologies
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CY7C1314BV18-250BZXC from Infineon Technologies is a IC SRAM 18MBIT PAR 165FBGA

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IGCM20F60HAXKMA1 by Infineon Technologies - IGBT 600V 24MDIP

IGCM20F60HAXKMA1

Infineon Technologies
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IGCM20F60HAXKMA1 from Infineon Technologies is a IGBT 600V 24MDIP

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IDH09G65C5XKSA1 by Infineon Technologies - DIODE SIL CARB 650V 9A TO220-2-2

IDH09G65C5XKSA1

Infineon Technologies
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IDH09G65C5XKSA1 from Infineon Technologies is a DIODE SIL CARB 650V 9A TO220-2-2

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IPU050N03L G by Infineon Technologies - MOSFET N-CH 30V 50A TO251-3

IPU050N03L G

Infineon Technologies
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IPU050N03L G from Infineon Technologies is a MOSFET N-CH 30V 50A TO251-3

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IRF7201PBF by Infineon Technologies - MOSFET N-CH 30V 7.3A 8SO

IRF7201PBF

Infineon Technologies
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IRF7201PBF from Infineon Technologies is a MOSFET N-CH 30V 7.3A 8SO

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IPP80N06S2L-05 by Infineon Technologies - N-CHANNEL POWER MOSFET

IPP80N06S2L-05

Infineon Technologies
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IPP80N06S2L-05 from Infineon Technologies is a N-CHANNEL POWER MOSFET

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S29CD016J0PFFI000

Infineon Technologies
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S29CD016J0PFFI000 from Infineon Technologies is a IC FLASH 16MBIT PARALLEL 80FBGA

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IRF9520NSTRR by Infineon Technologies - MOSFET P-CH 100V 6.8A D2PAK

IRF9520NSTRR

Infineon Technologies
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IRF9520NSTRR from Infineon Technologies is a MOSFET P-CH 100V 6.8A D2PAK

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CY7C1361B-117AJC

Infineon Technologies
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CY7C1361B-117AJC from Infineon Technologies is a IC SRAM 9MBIT PAR 117MHZ 100TQFP

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CY28411ZXC by Infineon Technologies - IC CLK GEN CPU 266MHZ 2CIRC

CY28411ZXC

Infineon Technologies
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CY28411ZXC from Infineon Technologies is a IC CLK GEN CPU 266MHZ 2CIRC

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IR3555MTRPBF by Infineon Technologies - IC GATE DRIVER 60A 30PQFN

IR3555MTRPBF

Infineon Technologies
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IR3555MTRPBF from Infineon Technologies is a IC GATE DRIVER 60A 30PQFN

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MMBZ5229B-HE3-18 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 4.3V 225MW SOT23-3

MMBZ5229B-HE3-18

Vishay General Semiconductor - Diodes Division
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MMBZ5229B-HE3-18 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 4.3V 225MW SOT23-3

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IDSS-14-S-27.55-G

Samtec Inc.
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IDSS-14-S-27.55-G from Samtec Inc. is a INSULATION DISPLACEMENT SOCKET C

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MMBZ4713-E3-18 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 30V 350MW SOT23-3

MMBZ4713-E3-18

Vishay General Semiconductor - Diodes Division
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MMBZ4713-E3-18 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 30V 350MW SOT23-3

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IDSD-15-S-12.00-T-ST4

Samtec Inc.
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IDSD-15-S-12.00-T-ST4 from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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MMBZ5242B-E3-18 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 12V 225MW SOT23-3

MMBZ5242B-E3-18

Vishay General Semiconductor - Diodes Division
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MMBZ5242B-E3-18 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 12V 225MW SOT23-3

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IMS05ST272J by Vishay Dale - FIXED INDUCTOR 2.7MH 40MA 47.3 OHM TH

IMS05ST272J

Vishay Dale
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IMS05ST272J from Vishay Dale is a FIXED INDUCTOR 2.7MH 40MA 47.3 OHM TH

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IDSD-17-D-09.90

Samtec Inc.
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IDSD-17-D-09.90 from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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IDSD-08-S-05.00-ST2

Samtec Inc.
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IDSD-08-S-05.00-ST2 from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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IDSS-12-D-03.50

Samtec Inc.
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IDSS-12-D-03.50 from Samtec Inc. is a INSULATION DISPLACEMENT SOCKET C

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IDSD-03-D-40.00

Samtec Inc.
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IDSD-03-D-40.00 from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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IDSD-06-S-48.00-T

Samtec Inc.
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IDSD-06-S-48.00-T from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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IDSD-20-D-12.40-G

Samtec Inc.
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IDSD-20-D-12.40-G from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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MMBZ5252B-HE3-08 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 24V 225MW SOT23-3

MMBZ5252B-HE3-08

Vishay General Semiconductor - Diodes Division
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MMBZ5252B-HE3-08 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 24V 225MW SOT23-3

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MMBZ5266B-HE3-18 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 68V 225MW SOT23-3

MMBZ5266B-HE3-18

Vishay General Semiconductor - Diodes Division
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MMBZ5266B-HE3-18 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 68V 225MW SOT23-3

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IDSD-14-D-20.00-P09

Samtec Inc.
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IDSD-14-D-20.00-P09 from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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IDSS-12-D-05.91

Samtec Inc.
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IDSS-12-D-05.91 from Samtec Inc. is a INSULATION DISPLACEMENT SOCKET C

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MMBZ4713-HE3-18 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 30V 350MW SOT23-3

MMBZ4713-HE3-18

Vishay General Semiconductor - Diodes Division
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MMBZ4713-HE3-18 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 30V 350MW SOT23-3

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IDSD-08-S-13.00-G

Samtec Inc.
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IDSD-08-S-13.00-G from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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SMZG3795A-E3/5B by Vishay General Semiconductor - Diodes Division - DIODE ZENER 18V 1.5W DO215AA

SMZG3795A-E3/5B

Vishay General Semiconductor - Diodes Division
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SMZG3795A-E3/5B from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 18V 1.5W DO215AA

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MMBZ4627-HE3-18 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 6.2V 350MW SOT23-3

MMBZ4627-HE3-18

Vishay General Semiconductor - Diodes Division
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MMBZ4627-HE3-18 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 6.2V 350MW SOT23-3

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IDSS-32-D-07.50

Samtec Inc.
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IDSS-32-D-07.50 from Samtec Inc. is a INSULATION DISPLACEMENT SOCKET C

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IDSD-04-S-12.00-ST4-B03

Samtec Inc.
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IDSD-04-S-12.00-ST4-B03 from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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MMBZ5244C-HE3-08 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 14V 225MW SOT23-3

MMBZ5244C-HE3-08

Vishay General Semiconductor - Diodes Division
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MMBZ5244C-HE3-08 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 14V 225MW SOT23-3

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IDSS-10-S-06.00-G

Samtec Inc.
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IDSS-10-S-06.00-G from Samtec Inc. is a INSULATION DISPLACEMENT SOCKET C

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MMBZ5242C-G3-08 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 12V 225MW SOT23-3

MMBZ5242C-G3-08

Vishay General Semiconductor - Diodes Division
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MMBZ5242C-G3-08 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 12V 225MW SOT23-3

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IDSD-07-S-16.10-P02

Samtec Inc.
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IDSD-07-S-16.10-P02 from Samtec Inc. is a INSULATION DISPLACEMENT TERMINAL

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