Search results for “MT29F2T08”

The MT29F2T08EMLEEJ4-M:E TR from Micron Technology Inc. is a TLC memory Integrated Circuit with 2T capacity and 256GX8 organization, in a VBGA QDP package.

The MT29F2T08GELCEJ4-M:C TR from Micron Technology Inc. is a QLC NAND flash memory Integrated Circuit with 2 Tbit capacity, organized as 256GX8, in a VBGA package with DDP.

The MT29F2T08EELCHD4-QA:C TR from Micron Technology Inc. is a NAND flash memory Integrated Circuit (TLC) with 2T capacity and 256GX8 organization, in an FBGA package with DDP construction.

The MT29F2T08EELCHD4-T:C TR from Micron Technology Inc. is a TLC memory Integrated Circuit rated 2T and 256GX8 in an FBGA package with DDP.

The MT29F2T08EELCHD4-M:C TR from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2T capacity and 256G x 8 organization, in an FBGA DDP package.

The MT29F2T08EMLEEJ4-QA:E from Micron Technology Inc. is a TLC memory Integrated Circuit with 2T capacity and 256GX8 organization, in a VBGA QDP package.

The MT29F2T08GELCEJ4-M:C from Micron Technology Inc. is a QLC memory Integrated Circuit rated 2T, organized as 256GX8 in a VBGA package (DDP).

The MT29F2T08EMLGEJ4-ITF:G from Micron Technology Inc. is a memory Integrated Circuit (TLC 2T 256GX8, VBGA QDP).

The MT29F2T08EMLEEJ4-R:E from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2Tbit capacity and 256GX8 organization, parallel interface, in a 132-VBGA (12x18) package.

The MT29F2T08EELCHD4-T:C from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2 Tbit capacity, 256GX8 organization, in an FBGA package with DDP.

The MT29F2T08ELLEEG7-QB:E TR from Micron Technology Inc. is a TLC flash memory Integrated Circuit with 2T capacity, 256G x 8 organization, an FBGA package and QDP configuration.

The MT29F2T08EMLEEJ4-QD:E TR from Micron Technology Inc. is a TLC memory Integrated Circuit with 2T capacity and 256GX8 organization, in a VBGA QDP package.

The MT29F2T08GELCEJ4-QB:C from Micron Technology Inc. is a QLC NAND flash memory Integrated Circuit with 2 Tbit capacity, 256GX8 organization, in a VBGA package with DDP design.

The MT29F2T08GELCEJ4:C from Micron Technology Inc. is a QLC memory Integrated Circuit rated 2T with 256GX8 organization in a VBGA DDP package.

The MT29F2T08EELCHD4-R:C TR from Micron Technology Inc. is a TLC memory Integrated Circuit with 2T capacity, 256GX8 organization, FBGA package and DDP configuration.

The MT29F2T08ELLCEG7-R:C from Micron Technology Inc. is a TLC memory Integrated Circuit rated 2T and 256GX8 in an FBGA package with QDP.

The MT29F2T08EMLEEJ4-R:E TR from Micron Technology Inc. is a NAND flash memory Integrated Circuit (TLC) with 2T capacity and 256GX8 organization, in a 132-VBGA (12x18) package with QDP construction.

The MT29F2T08GELCEJ4-QA:C TR from Micron Technology Inc. is a QLC NAND flash memory Integrated Circuit with 2 Tbit capacity, 256GX8 organization, in a VBGA package.

The MT29F2T08EMLEEJ4-QD:E from Micron Technology Inc. is a TLC memory Integrated Circuit with 2T capacity, 256GX8 organization, VBGA package and QDP configuration.

The MT29F2T08EMLEEJ4-M:E from Micron Technology Inc. is a TLC flash memory Integrated Circuit with 2T density, 256G x 8 organization, in a VBGA package (QDP).

The MT29F2T08EELCHD4-R:C from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2 Tbit capacity, organized as 256GX8, in an FBGA package with DDP.

The MT29F2T08EELCHL4-QA:C TR from Micron Technology Inc. is a TLC memory Integrated Circuit rated 2T, organized as 256GX8 in an FBGA package.

The MT29F2T08EMLEEJ4-QC:E TR from Micron Technology Inc. is a TLC flash memory Integrated Circuit with 2T density, 256G x 8 organization, in a VBGA package (QDP).

The MT29F2T08EMLEEJ4-QJ:E TR from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2T capacity, 256GX8 organization, in a VBGA package (QDP).

The MT29F2T08EELCHD4-QJ:C TR from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2 Tbit capacity, organized as 256GX8, in an FBGA package with DDP.

The MT29F2T08EMLEEJ4-T:E from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2 Tbit capacity and parallel interface, in a 132-VBGA (12x18) package with QDP.

The MT29F2T08EMLCEJ4-QJ:C from Micron Technology Inc. is a TLC memory Integrated Circuit with 2T capacity and 256GX8 organization, in a VBGA QDP package.

The MT29F2T08EMLEEJ4-T:E TR from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2 Tbit parallel capacity, 256G x 8 organization, in a 132-VBGA (12x18) package with QDP.

The MT29F2T08GELCEJ4-QB:C TR from Micron Technology Inc. is a QLC NAND flash memory Integrated Circuit with 2 Tbit capacity, organized as 256GX8, in a VBGA package with DDP.

The MT29F2T08EELCHD4-QC:C TR from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2 Tbit capacity, organized as 256GX8, in an FBGA package with DDP.

The MT29F2T08EELCHD4-QC:C from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2 Tbit capacity, organized as 256GX8, in an FBGA package with DDP.

The MT29F2T08ELLEEG7-QB:E from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2 Tbit capacity, organized as 256GX8, in an FBGA package with QDP.

The MT29F2T08EMLEEJ4-QJ:E from Micron Technology Inc. is a TLC memory Integrated Circuit with 2T capacity, 256GX8 organization, VBGA package and QDP configuration.

The MT29F2T08EELCHL4-QA:C from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2 Tbit capacity, 256GX8 organization, in an FBGA package.

The MT29F2T08ELLEEG7-QD:E TR from Micron Technology Inc. is a TLC NAND flash memory Integrated Circuit with 2T capacity, 256GX8 organization, in an FBGA package (QDP).

The MT29F2T08GELCEJ4-QM:C from Micron Technology Inc. is a QLC memory Integrated Circuit with 2T capacity, 256GX8 organization and VBGA package.

The MT29F2T08GELCEJ4-QJ:C from Micron Technology Inc. is a QLC NAND flash memory Integrated Circuit with 2 Tbit capacity, organized as 256GX8, in a VBGA package with DDP.

The MT29F2T08GELCEJ4:C TR from Micron Technology Inc. is a QLC NAND flash memory Integrated Circuit rated 2T, organized as 256GX8, in a VBGA package with DDP designation.

The MT29F2T08EELCHD4-QJ:C from Micron Technology Inc. is a TLC memory Integrated Circuit rated 2T and 256GX8 in an FBGA package with DDP.

The MT29F2T08EMLEEJ4-QA:E TR from Micron Technology Inc. is a triple-level cell (TLC) NAND flash memory Integrated Circuit with 2T capacity, 256GX8 organization, in a VBGA package with QDP designation.

The MT29F2T08EMLEEJ4-QC:E from Micron Technology Inc. is a triple-level cell (TLC) NAND flash memory Integrated Circuit with 2T capacity, 256GX8 organization, in a VBGA package with QDP designation.

The MT29F2T08GELCEJ4-QJ:C TR from Micron Technology Inc. is a QLC NAND flash memory Integrated Circuit with 2 Tbit capacity, organized as 256GX8, in a VBGA package with DDP.

The MT29F2T08GELCEJ4-QM:C TR from Micron Technology Inc. is a quad-level cell (QLC) NAND flash memory Integrated Circuit with 2T capacity, 256GX8 organization, in a VBGA package.

The MT29F2T08EELCHD4-QA:C from Micron Technology Inc. is a NAND flash memory Integrated Circuit (TLC) with 2T capacity and 256GX8 organization, in an FBGA package with DDP construction.