Search results for “nte”

The NTE60 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 140 V and 20 A, with a 2 MHz transition frequency and 250 W power, in a through-hole TO-3 package.

The NTE2678 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 600 V and 6 A with a 3 MHz transition frequency and 50 W power, in a through-hole TO-3P(H)IS package.

The NTE162 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 325 V and 10 A, with a 2.5 MHz transition frequency and 125 W power, in a through-hole TO-3 package.

The NTE267 from NTE Electronics, Inc is an NPN Darlington bipolar (BJT) transistor rated 30 V and 500 mA, with 75 MHz and 6.25 W ratings, in a through-hole TO-202 package.

The NTE2557 from NTE Electronics, Inc is an NPN Darlington bipolar (BJT) transistor rated 200 V and 15 A, with a 20 MHz transition frequency and 100 W power dissipation, in a through-hole TO-247 package.

The NTE1973 from NTE Electronics, Inc is a linear voltage regulator Integrated Circuit with a negative fixed -15 V, 1 output, in a TO-220 full pack package.

The NTE956 from NTE Electronics, Inc is a positive adjustable linear voltage regulator Integrated Circuit with 1 output rated at 1.5 A in a TO-220 package.

The NTE272 from NTE Electronics, Inc is an NPN Darlington bipolar (BJT) transistor rated 40 V and 2 A with 1 W power dissipation, in a through-hole TO-202N package.

The NTE2501 from NTE Electronics, Inc is an NPN bipolar Radio Frequency transistor rated 300 V at 70 MHz, in a TO-126 package.

The NTE152 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 90 V and 4 A, with an 8 MHz transition frequency and 40 W power dissipation, in a through-hole TO-220 package.

The NTE218 from NTE Electronics, Inc is a PNP bipolar (BJT) transistor rated 80 V and 4 A in a TO3 package.

The NTE131 from NTE Electronics, Inc is a PNP bipolar (BJT) transistor rated 32 V and 1 A with 6 W power dissipation, in a through-hole TO-66 package.

The NTE130 from NTE Electronics, Inc is an NPN bipolar junction transistor rated 60 V and 15 A, with a 2.5 MHz transition frequency and 115 W power dissipation, in a through-hole TO-3 package.

The NTE395 from NTE Electronics, Inc is a PNP Radio Frequency transistor rated 25 V, 50 mA, 2.3 GHz and 225 mW, in a through-hole TO-72 package.

The NTE2569 from NTE Electronics, Inc is a PNP bipolar (BJT) transistor rated 60 V and 10 A, with a 100 MHz transition frequency and 2 W power dissipation, in a through-hole TO-220 package.

The NTE3322 from NTE Electronics, Inc is an IGBT rated 900 V and 60 A with 170 W power dissipation, in a through-hole TO-3P package.

The NTE154 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 300 V, 50 MHz, 1 W, in a through-hole TO-39 package.

The NTE245 from NTE Electronics, Inc is an 80 V, 10 A NPN Darlington bipolar transistor rated 150 W, for through-hole mounting in a TO-3 package.

The NTE960 from NTE Electronics, Inc is a positive fixed linear voltage regulator with 1 output at 5 V and 1 A, in a TO-220 package.

The NTE2335 from NTE Electronics, Inc is an NPN Darlington bipolar transistor rated 60 V, 5 A and 80 W, in a through-hole TO-3P package.

The NTE175 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 300 V and 2 A, with 15 MHz and 35 W, in a through-hole TO-66 package.

The NTE2329 from NTE Electronics, Inc is a PNP bipolar (BJT) transistor rated 200 V and 15 A, with a 25 MHz transition frequency and 150 W power dissipation, in a through-hole TO-3PBL package.

The NTE1970 from NTE Electronics, Inc is a positive fixed linear voltage regulator Integrated Circuit with 1 output and a 12 V rating, in a TO-220 full pac package.

The NTE2676 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 600 V and 10 A, with a 1.7 MHz transition frequency and 50 W power dissipation, in a through-hole TO-3P(H)IS package.

The NTE2300 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 800 V and 5 A with 3 MHz and 120 W, in a through-hole TO-3P package.

The NTE2640 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 800 V and 6 A, with 2 W power dissipation, in a through-hole TO-220 package.

The NTE74 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 100 V and 7 A, with a 30 MHz transition frequency and 60 W power dissipation, in a stud-mount TO-59 package.

The NTE486 from NTE Electronics, Inc is an NPN bipolar Radio Frequency transistor rated 20 V, 150 mA, 2 GHz and 2.5 W, in a through-hole TO-39 package.

The NTE281MCP from NTE Electronics, Inc is a PNP bipolar (BJT) transistor rated 140 V and 12 A, with a 5 MHz transition frequency and 100 W power dissipation, in a through-hole TO-3 package.

The NTE1964 from NTE Electronics, Inc is a linear voltage regulator Integrated Circuit rated 8 V in a TO-220 full pack package.

NTE2696 from NTE Electronics, Inc is a TRANS NPN 120V 0.1A TO92

The NTE183 from NTE Electronics, Inc is a PNP bipolar transistor rated 60 V and 10 A, in a TO-127 package.

The NTE2675 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 800 V and 6 A with 100 W power dissipation, in a through-hole TO-3PN package.

The NTE55MCP from NTE Electronics, Inc is a PNP bipolar Radio Frequency transistor rated 150 V, 8 A and 30 MHz at 2 W, through-hole in a TO-220 package, supplied as a pair.

NTE16001 from NTE Electronics, Inc is a TRANS NPN 35V 0.05A 3SIP

The NTE104 from NTE Electronics, Inc is a PNP bipolar (BJT) transistor rated 35 V and 10 A, with a 300 kHz transition frequency and 90 W power dissipation, in a through-hole TO-3 package.

The NTE2547 from NTE Electronics, Inc is an NPN Darlington bipolar transistor rated 100 V, 8 A, 20 MHz and 2 W, for through-hole mounting in a TO-220 package.

The NTE128-5 from NTE Electronics, Inc is a 2-channel (stereo) amplifier Integrated Circuit in a TO-39 package (NTE128(5/PKG)).

The NTE397 from NTE Electronics, Inc is a 300 V, 1 A PNP bipolar junction transistor rated 10 W, for through-hole mounting in a TO-39 package.

The NTE2550 from NTE Electronics, Inc is an NPN Darlington bipolar (BJT) transistor rated 400 V and 10 A, with a 10 MHz transition frequency and 50 W power dissipation, in a through-hole TO-220 package.

The NTE2677 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 800 V and 10 A with 70 W power dissipation, in a through-hole TO-3P(H)IS package.

The NTE2699 from NTE Electronics, Inc is an NPN bipolar transistor rated 60 V and 15 A, in a TO220 package.

The NTE2411 from NTE Electronics, Inc is a PNP bipolar transistor rated 150 V and 0.5 A, in a SOT-23 package.

NTE2409 from NTE Electronics, Inc is a PNP TRANSISTOR 65V 0.1A SOT23

The NTE2340 from NTE Electronics, Inc is an NPN Darlington bipolar (BJT) transistor rated 60 V and 8 A, with a 20 MHz transition frequency and 1.3 W power dissipation, in a through-hole 3-SIP package.

The NTE77 from NTE Electronics, Inc is an NPN Radio Frequency bipolar transistor rated 30 V, 400 mA, 1.8 GHz and 3.5 W, for through-hole mounting, in a TO-39 package.

The NTE24 from NTE Electronics, Inc is an NPN bipolar transistor rated 80 V and 1 A, in a TO-237 package.

The NTE2546 from NTE Electronics, Inc is a PNP Darlington bipolar (BJT) transistor rated 60 V and 5 A in a TO-220 package.