Search results for “trenchfet”

The IPB040N08NF2SATMA1 from Infineon Technologies is an N-Channel MOSFET rated 50 V and 107 A (Tc), with 150 W (Tc), in a surface-mount PG-TO263-3 package (40<-<100V).

The NTMFS6H852NT1G from onsemi is an N-channel 80 V MOSFET rated 10 A (Ta), 40 A (Tc) and 3.6 W (Ta), 54 W (Tc), in a surface-mount 5-DFN (5x6) (8-SOFL) package.

The IPB019N08NF2SATMA1 from Infineon Technologies is an N-Channel MOSFET rated 80 V and 166 A (Tc), with 250 W (Tc), in a surface-mount PG-TO263-3 package (40<-<100V).

The NVMJST1D3N04CTXG from onsemi is an N-channel MOSFET from the Trench 6 series rated 40 V and 386 A (Tc) with 375 W (Tc), in a surface-mount 10-TCPAK (LFPAK 5x7) package.

The NVMJST0D9N04CTXG from onsemi is an N-channel MOSFET from the Trench 6 series rated 40 V and 531 A (Tc) with 555 W (Tc), in a surface-mount 10-TCPAK (LFPAK 5x7) package.

IPF039N08NF2SATMA1 from Infineon Technologies is a TRENCH 40<-<100V PG-TO263-7

The NVMFS4C308NT1G from onsemi is an N-channel 30 V MOSFET rated 17.2 A (Ta), 55 A (Tc) and 3 W (Ta), 30.6 W (Tc), in a surface-mount 5-DFN (5x6) (8-SOFL) package.

The IPB024N08NF2SATMA1 from Infineon Technologies is an N-Channel MOSFET rated 80 V and 107 A (Tc), with 150 W (Tc), in a surface-mount PG-TO263-3 package (40<-<100V).

The SQ2389ES-T1_BE3 from Vishay Siliconix is a P-channel 40 V, 4.1 A (Tc) MOSFET rated 3 W (Tc), in a surface-mount SOT-23-3 (TO-236) package.

The SI7880ADP-T1-E3 from Vishay Siliconix is an N-channel MOSFET rated 30 V and 40 A (Tc), with 5.4 W (Ta) and 83 W (Tc) power dissipation, in a surface-mount PowerPAK SO-8 package.

The SIR166DP-T1-GE3 from Vishay Siliconix is an N-channel MOSFET rated 30 V and 40 A (Tc), with 5 W (Ta) and 48 W (Tc) power dissipation, in a surface-mount PowerPAK SO-8 package.

The BUK7225-55A,118 from Nexperia USA Inc. is a 55 V N-channel MOSFET rated 43 A (Tc) and 94 W (Tc), in a surface-mount DPAK package.

The SIR482DP-T1-GE3 from Vishay Siliconix is an N-channel MOSFET rated 30 V and 35 A (Tc), with 5 W (Ta) and 27.7 W (Tc) power dissipation, in a surface-mount PowerPAK® SO-8 package.

The SQ3456CEV-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 30 V MOSFET rated 7.8 A (Tc) and 4 W (Tc), in a surface-mount 6-TSOP package.

The SI4936BDY-T1-E3 from Vishay Siliconix is a MOSFET array with two N-channel devices rated 30 V and 6.9 A, 2.8 W, in a surface-mount 8-SOIC package.

The SQ2348ES-T1_GE3 from Vishay Siliconix is an N-channel MOSFET rated 30 V and 8 A (Tc), dissipating 3 W (Tc), in a surface-mount SOT-23-3 (TO-236) package.

IPP019N08NF2SAKMA1 from Infineon Technologies is a TRENCH 40<-<100V

The SIR462DP-T1-GE3 from Vishay Siliconix is an N-channel MOSFET rated 30 V and 30 A (Tc) with 4.8 W (Ta) / 41.7 W (Tc) power dissipation, in a surface-mount PowerPAK SO-8 package.

The SI7121DN-T1-GE3 from Vishay Siliconix is a P-channel MOSFET rated 30 V and 16 A (Tc), with 3.7 W (Ta) and 52 W (Tc) power dissipation, in a surface-mount PowerPAK 1212-8 package.

The SI7121ADN-T1-GE3 from Vishay Siliconix is a P-channel MOSFET rated 30 V and 12 A (Ta) with 3.5 W (Ta) and 27.8 W (Tc) power dissipation, in a surface-mount PowerPAK 1212-8 package.

The SQA600CEJW-T1_GE3 from Vishay Siliconix is an automotive N-channel MOSFET rated 80 V and 9 A (Tc), with 13.6 W (Tc) power dissipation, in a surface-mount, wettable flank PowerPAK SC-70W-6 package.

The SIZ350DT-T1-GE3 from Vishay Siliconix is a dual N-channel MOSFET array rated 30 V, with 18.5 A (Ta) and 30 A (Tc), 3.7 W (Ta) and 16.7 W (Tc), in a surface-mount 8-Power33 (3x3) package.

The SIR466DP-T1-GE3 from Vishay Siliconix is an N-channel MOSFET rated 30 V and 40 A (Tc), dissipating 5 W (Ta) and 54 W (Tc), for surface mounting in a PowerPAK SO-8 package.

The SIR472ADP-T1-GE3 from Vishay Siliconix is an N-channel MOSFET rated 30 V and 18 A (Tc), with 3.3 W (Ta) and 14.7 W (Tc) power dissipation, for surface mounting in a PowerPAK SO-8 package.

The NTMFS4C808NAT1G from onsemi is an N-channel MOSFET rated 30 V, with 9 A (Ta) and 52 A (Tc) current ratings, 760 mW (Ta) and 25.5 W (Tc) power dissipation, in a surface-mount 5-DFN (5x6) (8-SOFL) package.

The SIDR638DP-T1-RE3 from Vishay Siliconix is an N-channel 40 V (D-S) MOSFET.

The SIRA18DP-T1-GE3 from Vishay Siliconix is an N-channel MOSFET rated 30 V and 33 A, in a PowerPAK SO-8 package.

The SI7956DP-T1-E3 from Vishay Siliconix is a MOSFET array with two N-channel devices rated 150 V and 2.6 A, 1.4 W, in a surface-mount PowerPAK SO-8 Dual package.

The SIRA10DP-T1-GE3 from Vishay Siliconix is an N-channel MOSFET rated 30 V and 60 A (Tc) with 5 W (Ta) and 40 W (Tc) power dissipation, in a surface-mount PowerPAK SO-8 package.

The SIRA02DP-T1-GE3 from Vishay Siliconix is an N-channel MOSFET rated 30 V and 50 A (Tc) with 5 W (Ta) and 71.4 W (Tc) power ratings, in a surface-mount PowerPAK® SO-8 package.

The NTMFS4C808NAT3G from onsemi is an N-channel MOSFET rated 30 V, with 9 A (Ta) and 52 A (Tc) current ratings, 760 mW (Ta) and 25.5 W (Tc) power dissipation, in a surface-mount 5-DFN (5x6) (8-SOFL) package.

The SI7806ADN-T1-GE3 from Vishay Siliconix is an N-channel 30 V, 9 A (Ta) MOSFET rated 1.5 W (Ta), in a surface-mount PowerPAK 1212-8 package.

The SIR165DP-T1-GE3 from Vishay Siliconix is a P-channel MOSFET rated 30 V and 60 A (Tc), 69.4 W (Tc), in a surface-mount PowerPAK SO-8 package.

The SI7994DP-T1-GE3 from Vishay Siliconix is a dual MOSFET array rated 30 V and 60 A, dissipating 46 W, in a surface-mount PowerPAK SO-8 dual package.

The BUK9635-55A,118 from Nexperia USA Inc. is a logic-level N-channel MOSFET rated 55 V and 34 A (Tc), with 85 W (Tc) power dissipation, in a surface-mount D2PAK package.

The SI4922BDY-T1-E3 from Vishay Siliconix is a dual N-channel MOSFET array rated 30 V and 8 A, with 3.1 W power dissipation, in a surface-mount 8-SOIC package.

The SI4431BDY-T1-GE3 from Vishay Siliconix is a P-channel MOSFET rated 30 V and 5.7 A (Ta) with 1.5 W (Ta) power dissipation, in a surface-mount 8-SOIC package.

The SI7421DN-T1-E3 from Vishay Siliconix is a P-channel 30 V, 6.4 A MOSFET rated 1.5 W (Ta), in a surface-mount PowerPAK 1212-8 package.

The SI3459BDV-T1-GE3 from Vishay Siliconix is a P-channel MOSFET rated 60 V and 2.9 A (Tc), with 2 W (Ta) or 3.3 W (Tc) power dissipation, in a surface-mount 6-TSOP package.

The SQ2364EES-T1_BE3 from Vishay Siliconix is an N-channel 60 V (D-S) MOSFET rated 2 A (Tc) with 3 W (Tc) power and a 175 °C rating, in a surface-mount SOT-23-3 (TO-236) package.

The SIRA88BDP-T1-GE3 from Vishay Siliconix is an N-channel MOSFET transistor rated 30 V with 19 A/40 A current ratings in a PPAK SO-8 package.

The SQJA76EP-T1_BE3 from Vishay Siliconix is an N-channel 40 V MOSFET rated 75 A (Tc) and 68 W (Tc), in a surface-mount PowerPAK SO-8 package, with a 175°C rating.