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Search results for “B032ND”

BX8494-1

Rohm Semiconductor
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BX8494-1 from Rohm Semiconductor is a POWER MODULE

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46W-BCG28H-CWO

Visual Communications Company - VCC
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SCP8TTF1HEL1TUM34E

Samsung Semiconductor, Inc.
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SCP8TTF1HEL1TUM34E from Samsung Semiconductor, Inc. is a LED

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SPHWW1HDND28YHV23J

Samsung Semiconductor, Inc.
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SPHWW1HDND28YHV23J from Samsung Semiconductor, Inc. is a LED COB LC033B WARM WHT SQ 3000K

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SPMWH3228FD7WARKSE

Samsung Semiconductor, Inc.
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SPMWH3228FD7WARKSE from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERIES 2835 0.5

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LH5116NA-10

Sharp Microelectronics
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LH5116NA-10 from Sharp Microelectronics is a IC SRAM 16KBIT PARALLEL 24SOP

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BZG05B3V6-E3-TR3

Vishay General Semiconductor - Diodes Division
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BZG05B3V6-E3-TR3 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 3.6V 1.25W DO214AC

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BZG03B33TR

Vishay General Semiconductor - Diodes Division
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BZG03B33TR from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 33V 1.25W DO214AC

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BDE-MB1352P71UN by BDE Technology - CC1352P7 MUTI-BAND MUTI-PROTOCOL

BDE-MB1352P71UN

BDE Technology
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BDE-MB1352P71UN from BDE Technology is a CC1352P7 MUTI-BAND MUTI-PROTOCOL

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BZG03C270TR3 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 270V 1.25W DO214AC

BZG03C270TR3

Vishay General Semiconductor - Diodes Division
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BZG03C270TR3 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 270V 1.25W DO214AC

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BA782-E3-18 by Vishay General Semiconductor - Diodes Division - RF DIODE PIN 35V SOD123

BA782-E3-18

Vishay General Semiconductor - Diodes Division
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BA782-E3-18 from Vishay General Semiconductor - Diodes Division is a RF DIODE PIN 35V SOD123

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MT62F768M32D2DS-023 FAAT:B by Micron Technology Inc. - LPDDR5 24GBIT 32 315/315 TFBGA 2

MT62F768M32D2DS-023 FAAT:B

Micron Technology Inc.
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MT62F768M32D2DS-023 FAAT:B from Micron Technology Inc. is a LPDDR5 24GBIT 32 315/315 TFBGA 2

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BZG03C240TR3 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 240V 1.25W DO214AC

BZG03C240TR3

Vishay General Semiconductor - Diodes Division
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BZG03C240TR3 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 240V 1.25W DO214AC

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2SD882-Y-BP by Micro Commercial Co - TRANS NPN 30V 3A TO126

2SD882-Y-BP

Micro Commercial Co
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2SD882-Y-BP from Micro Commercial Co is a TRANS NPN 30V 3A TO126

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SPMWH1229AQ7SGQMSB

Samsung Semiconductor, Inc.
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SPMWH1229AQ7SGQMSB from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERIES 2835 1.0

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SPMWH22296Q5SGQ0S1

Samsung Semiconductor, Inc.
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SPMWH22296Q5SGQ0S1 from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERIES 2835 0.5

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SPMWH2228MD5WAVMS1

Samsung Semiconductor, Inc.
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SPMWH2228MD5WAVMS1 from Samsung Semiconductor, Inc. is a LED LM281B+

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SPMWH1229AD7SGUKSA

Samsung Semiconductor, Inc.
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SPMWH1229AD7SGUKSA from Samsung Semiconductor, Inc. is a LED 3500K 90CRI SMD

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SCP7TT78HEL1TUS06E

Samsung Semiconductor, Inc.
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SCP7TT78HEL1TUS06E from Samsung Semiconductor, Inc. is a LED LM101B CHIP SCALE

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SPMWH1221FQ5GBTMSA

Samsung Semiconductor, Inc.
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SPMWH1221FQ5GBTMSA from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERES 2835 6V R

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SCP7WT78HEL1WUS06E

Samsung Semiconductor, Inc.
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SCP7WT78HEL1WUS06E from Samsung Semiconductor, Inc. is a LED

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SPMWH1221FQ5GBQMSA

Samsung Semiconductor, Inc.
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SPMWH1221FQ5GBQMSA from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERES 2835 6V R

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SPMWH22286D5WAQKS3

Samsung Semiconductor, Inc.
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SPMWH22286D5WAQKS3 from Samsung Semiconductor, Inc. is a LED LM281B+

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BZT52B3V3-E3-18 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 3.3V 410MW SOD123

BZT52B3V3-E3-18

Vishay General Semiconductor - Diodes Division
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BZT52B3V3-E3-18 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 3.3V 410MW SOD123

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BZX384B6V2-G3-18 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 6.2V 200MW SOD323

BZX384B6V2-G3-18

Vishay General Semiconductor - Diodes Division
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BZX384B6V2-G3-18 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 6.2V 200MW SOD323

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BZX55B3V3 A0G by Taiwan Semiconductor Corporation - DIODE ZENER 3.3V 500MW DO35

BZX55B3V3 A0G

Taiwan Semiconductor Corporation
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BZX55B3V3 A0G from Taiwan Semiconductor Corporation is a DIODE ZENER 3.3V 500MW DO35

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EDB4432BBBJ-1DAUT-F-D

Micron Technology Inc.
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EDB4432BBBJ-1DAUT-F-D from Micron Technology Inc. is a IC DRAM 4GBIT PARALLEL 134FBGA

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FCCR16162ABTP

Kamaya Inc.
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FCCR16162ABTP from Kamaya Inc. is a FUSE CHIP 1.6A 50VDC 0603

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BZG05B5V6-E3-TR3

Vishay General Semiconductor - Diodes Division
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BZG05B5V6-E3-TR3 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 5.6V 1.25W DO214AC

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BZG03C220TR by Vishay General Semiconductor - Diodes Division - DIODE ZENER 220V 1.25W DO214AC

BZG03C220TR

Vishay General Semiconductor - Diodes Division
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BZG03C220TR from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 220V 1.25W DO214AC

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BZG05B39-E3-TR3

Vishay General Semiconductor - Diodes Division
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BZG05B39-E3-TR3 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 39V 1.25W DO214AC

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BZG03C24TR3 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 24V 1.25W DO214AC

BZG03C24TR3

Vishay General Semiconductor - Diodes Division
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BZG03C24TR3 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 24V 1.25W DO214AC

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BZG05C36TR3 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 36V 1.25W DO214AC

BZG05C36TR3

Vishay General Semiconductor - Diodes Division
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BZG05C36TR3 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 36V 1.25W DO214AC

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BZG05C6V2-E3-TR3 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 6.2V 1.25W DO214AC

BZG05C6V2-E3-TR3

Vishay General Semiconductor - Diodes Division
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BZG05C6V2-E3-TR3 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 6.2V 1.25W DO214AC

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BDE-LE2640R2LAU0 by BDE Technology - CC2640R2L BLUETOOTH LE MODULE

BDE-LE2640R2LAU0

BDE Technology
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BDE-LE2640R2LAU0 from BDE Technology is a CC2640R2L BLUETOOTH LE MODULE

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PI2EQX3202BNBEX by Diodes Incorporated - IC REDRIVER 2CH 3.2GBPS 84LFBGA

PI2EQX3202BNBEX

Diodes Incorporated
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PI2EQX3202BNBEX from Diodes Incorporated is a IC REDRIVER 2CH 3.2GBPS 84LFBGA

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BZT52B3V6-E3-18 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 3.6V 410MW SOD123

BZT52B3V6-E3-18

Vishay General Semiconductor - Diodes Division
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BZT52B3V6-E3-18 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 3.6V 410MW SOD123

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BZT52B3V3-G3-18 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 3.3V 410MW SOD123

BZT52B3V3-G3-18

Vishay General Semiconductor - Diodes Division
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BZT52B3V3-G3-18 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 3.3V 410MW SOD123

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BZD27C36PHR3G by Taiwan Semiconductor Corporation - DIODE ZENER 36V 1W SUB SMA

BZD27C36PHR3G

Taiwan Semiconductor Corporation
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BZD27C36PHR3G from Taiwan Semiconductor Corporation is a DIODE ZENER 36V 1W SUB SMA

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BZD27B62P-E3-18 by Vishay General Semiconductor - Diodes Division - DIODE ZENER 62V 800MW DO219AB

BZD27B62P-E3-18

Vishay General Semiconductor - Diodes Division
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BZD27B62P-E3-18 from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 62V 800MW DO219AB

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BDE-SG1312R7U by BDE Technology - CC1312R7 Sub-1G MODULE

BDE-SG1312R7U

BDE Technology
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BDE-SG1312R7U from BDE Technology is a CC1312R7 Sub-1G MODULE

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HZ2A3TD-E

Renesas Electronics America Inc
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HZ2A3TD-E from Renesas Electronics America Inc is a DIODE ZENER 0.5W

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BZG03C110TR by Vishay General Semiconductor - Diodes Division - DIODE ZENER 110V 1.25W DO214AC

BZG03C110TR

Vishay General Semiconductor - Diodes Division
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BZG03C110TR from Vishay General Semiconductor - Diodes Division is a DIODE ZENER 110V 1.25W DO214AC

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MT62F1G32D2DS-023 IT:B TR by Micron Technology Inc. - LPDDR5 32G 1GX32 FBGA

MT62F1G32D2DS-023 IT:B TR

Micron Technology Inc.
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MT62F1G32D2DS-023 IT:B TR from Micron Technology Inc. is a LPDDR5 32G 1GX32 FBGA

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MT53E256M32D2DS-053 AIT:B TR by Micron Technology Inc. - IC DRAM 8GBIT 1.866GHZ 200WFBGA

MT53E256M32D2DS-053 AIT:B TR

Micron Technology Inc.
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MT53E256M32D2DS-053 AIT:B TR from Micron Technology Inc. is a IC DRAM 8GBIT 1.866GHZ 200WFBGA

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MT62F512M32D2DS-031 AUT:B TR by Micron Technology Inc. - LPDDR5 16G 512MX32 FBGA DDP

MT62F512M32D2DS-031 AUT:B TR

Micron Technology Inc.
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MT62F512M32D2DS-031 AUT:B TR from Micron Technology Inc. is a LPDDR5 16G 512MX32 FBGA DDP

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MT53D1536M32D6BE-046 WT:D

Micron Technology Inc.
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MT53D1536M32D6BE-046 WT:D from Micron Technology Inc. is a IC DRAM 48G 2133MHZ FBGA

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BA782S-G3-08 by Vishay General Semiconductor - Diodes Division - RF DIODE STANDARD 35V SOD323

BA782S-G3-08

Vishay General Semiconductor - Diodes Division
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BA782S-G3-08 from Vishay General Semiconductor - Diodes Division is a RF DIODE STANDARD 35V SOD323

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