Search results for “CoolMOS™”

The IPI65R190C from Infineon Technologies is an N-channel 650 V power MOSFET rated 20.2 A (Tc) and 151 W (Tc), in a through-hole PG-TO262-3-1 package.

The IPP65R150CFDXKSA2 from Infineon Technologies is an N-channel MOSFET rated 650 V and 22.4 A (Tc) with 195.3 W (Tc) power dissipation, in a through-hole PG-TO220-3 package.

The IPP60R380E6 from Infineon Technologies is a CoolMOS N-channel power MOSFET rated 600 V and 10.6 A (Tc) with 83 W (Tc) power dissipation, in a through-hole PG-TO220-3-1 package.

The IPS60R1K5CEAKMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 5 A (Tj) with 49 W (Tc) power dissipation, in a through-hole PG-TO251-3 package.

The IPD50R3K0CEBTMA1 from Infineon Technologies is a N-channel MOSFET rated 500 V and 1.7 A (Tc) with 18 W (Tc) power dissipation, in a surface-mount PG-TO252-3 package.

The IPA60R230P6 from Infineon Technologies is an N-channel power MOSFET rated 600 V, 16.8 A (Tc) and 33 W (Tc), for through-hole mounting in a PG-TO220-3-111 package.

The SPP11N65C3XK from Infineon Technologies is an N-channel CoolMOS MOSFET (650V AND 700V COOLMOS) rated 650 V and 11 A (Tc), with 125 W (Tc) dissipation, for through-hole mounting in a PG-TO220-3-1 package.

The SPA20N65C3XK from Infineon Technologies is an N-channel CoolMOS MOSFET rated 650 V (650V and 700V COOLMOS) and 20.7 A (Tc), with 34.5 W (Tc), in a through-hole PG-TO220-3-111 package.

The IPL65R1K5C6SE8211ATMA1 from Infineon Technologies is a CoolMOS MOSFET rated 650 V and 700 V.

The IPW65R280E6 from Infineon Technologies is an N-channel CoolMOS E6 power MOSFET rated 650 V and 13.8 A (Tc), 104 W (Tc), in a through-hole PG-TO247-3-41 package.

The IPW60R0706P from Infineon Technologies is a 600 V CoolMOS N-channel power MOSFET.

The IPS70R2K0CEE8211AKMA1 from Infineon Technologies is a 700 V CoolMOS N-channel MOSFET transistor.

The IPP60R160P6XKSA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 23.8 A (Tc), with 176 W (Tc) power dissipation, in a through-hole PG-TO220-3 package.

The IPD50R800CEAUMA1 from Infineon Technologies is an N-channel MOSFET rated 500 V and 7.6 A (Tc) with 60 W (Tc) power dissipation, in a surface-mount PG-TO252-2 package.

The IPP60R190E6XKSA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 20.2 A (Tc) with 151 W (Tc) power dissipation, in a through-hole PG-TO220-3 package.

The IPP60R125P6XKSA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 30 A (Tc) with 219 W (Tc) power dissipation, in a through-hole PG-TO220-3 package.

The IPD50R399CPATMA1 from Infineon Technologies is an N-channel MOSFET rated 500 V and 9 A (Tc), with 83 W (Tc) power dissipation, in a surface-mount PG-TO252-3-313 package.

The IPS60R460CEAKMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 13.1 A (Tj) with 102 W (Tc) power dissipation, in a through-hole PG-TO251-3 package.

The SPB80N03S2L05 from Infineon Technologies is an N-channel power MOSFET rated 30 V and 80 A (Tc), with 167 W (Tc) power dissipation, in a surface-mount PG-TO263-2 package.

The SPU02N60S5 from Infineon Technologies is a CoolMOS N-channel MOSFET rated 600 V and 1.8 A (Tc) with 25 W (Tc) power dissipation, in a through-hole PG-TO251-3 package.

The IPS60R800CEAKMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 8.4 A (Tj) at 74 W (Tc), in a through-hole PG-TO251-3 package.

The IPP80R900P7XKSA1 from Infineon Technologies is an N-channel MOSFET rated 800 V and 6 A (Tc) with 45 W (Tc) power dissipation, in a through-hole PG-TO220-3 package.

The IPP65R310CFDXKSA2 from Infineon Technologies is an N-channel MOSFET rated 650 V and 11.4 A (Tc) with 104.2 W (Tc) power dissipation, in a through-hole PG-TO220-3 package.

The IPP65R600C6XKSA1 from Infineon Technologies is an N-channel MOSFET transistor rated 650 V and 7.3 A in a TO220-3 package.

The IPP60R280P7XKSA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 12 A (Tc) with 53 W (Tc) power dissipation, in a through-hole PG-TO220-3 package.

The SPB07N60C3 from Infineon Technologies is an N-channel CoolMOS MOSFET rated 600 V and 7.3 A (Tc), dissipating 83 W (Tc), in a surface-mount PG-TO263-3-2 package.

The IPA50R140CPXK from Infineon Technologies is an N-channel power MOSFET rated 500 V and 23 A (Tc), with 34 W (Tc) power dissipation, in a through-hole PG-TO220-3-111 package.

The IPW65R080CFDFKSA1 from Infineon Technologies is an N-channel MOSFET rated 700 V and 43.3 A (Tc) with 391 W (Tc) power dissipation, in a through-hole PG-TO247-3-1 package.

The IPLK70R750P7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 700 V, in a surface-mount PG-TDSON-8 package.

The IPN60R3K4CEATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 2.6 A (Tc) at 5 W (Tc), in a PG-SOT223-3 surface-mount package.

The IPA65R190C7 from Infineon Technologies is an N-channel MOSFET rated 650 V and 8 A (Tc) with 30 W (Tc) power dissipation, in a through-hole PG-TO220 Full Pack package.

The IPT60R045CFD7XTMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 52 A (Tc), with 270 W (Tc) power dissipation, in a surface-mount PG-HSOF-8-1 package.

The IPB65R660CFDAATMA1 from Infineon Technologies is an N-channel MOSFET rated 650 V and 6 A (Tc) with 62.5 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPS60R600PFD7SAKMA1 from Infineon Technologies is a 650 V, 6 A (Tc) N-channel MOSFET rated 31 W (Tc), in a through-hole PG-TO251-3 package.

The IPU50R950CEAKMA2 from Infineon Technologies is an N-channel MOSFET rated 500 V and 4.3 A (Tc), with 53 W (Tc) power dissipation, in a through-hole PG-TO251-3 package.

The IPP65R110CFDXKSA1 from Infineon Technologies is an N-channel MOSFET rated 700 V and 31.2 A (Tc) at 277.8 W (Tc), in a through-hole PG-TO220-3 package.

The IPU60R1K5CEAKMA2 from Infineon Technologies is an N-channel MOSFET rated 600 V and 3.1 A (Tc) with 49 W (Tc) power dissipation, in a through-hole PG-TO251-3 package.

The IPD50R380CEBTMA1 from Infineon Technologies is an N-channel MOSFET rated 500 V and 14.1 A, in a TO252-3 package.

The IPA60R385CP from Infineon Technologies is an N-channel CoolMOS MOSFET rated 600 V, 9 A (Tc) and 31 W (Tc), for through-hole mounting in a PG-TO220-3-31 package.

The IPA60R360CFD7XKSA1 from Infineon Technologies is an N-channel MOSFET rated 650 V and 5 A (Tc) with 23 W (Tc) power dissipation, in a through-hole PG-TO220 Full Pack package.

The ICE3AR1080JGXUMA1 from Infineon Technologies is an offline switch Integrated Circuit for flyback converter topology operating at 100 kHz, in a PG-DSO-12-19 package.

The IPW60R180P7XKSA1 from Infineon Technologies is an N-channel 650 V, 18 A (Tc) MOSFET rated 72 W (Tc), in a through-hole PG-TO247-3 package.

The IPD65R380C6BTMA1 from Infineon Technologies is an N-channel MOSFET rated 650 V and 10.6 A (Tc) at 83 W (Tc), in a PG-TO252-3 surface-mount package.

The IPA65R400CEXKSA1 from Infineon Technologies is an N-channel MOSFET rated 650 V and 15.1 A (Tc) with 31 W (Tc) power dissipation, in a through-hole PG-TO220-FP package.

The IPU80R2K8CEAKMA1 from Infineon Technologies is an N-channel MOSFET rated 800 V and 1.9 A (Tc) with 42 W (Tc) power dissipation, in a through-hole PG-TO251-3 package.

The ICE5GR4780AGXUMA1 from Infineon Technologies is an offline flyback converter switch Integrated Circuit operating at 125 kHz, in a PG-DSO-12-21 package.