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Search results for “MT8JTF25664HZ”

STOIMW750558I2SE31

Samsung Semiconductor, Inc.
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STOIMW750558I2SE31 from Samsung Semiconductor, Inc. is a LED MOD OUTD ARR WHT RECT 5000K

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MPAS-33-00100100-25-27P

L3 Narda-MITEQ
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MPAS-33-00100100-25-27P from L3 Narda-MITEQ is a AMPLIFIER

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3M CN4490 0.5"" X 54.5YD

3M (TC)
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3M CN4490 0.5"" X 54.5YD from 3M (TC) is a RF EMI SHLDING TAPE 163.5'X0.5

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LMP2012 MDP

Texas Instruments
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LMP2012 MDP from Texas Instruments is a PROTOTYPE

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AMF-2F-00010100-20-20P-L

L3 Narda-MITEQ
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AMF-2F-00010100-20-20P-L from L3 Narda-MITEQ is a AMPLIFIER - MEDIUM POWER

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MS3456KS24-9S

Corsair
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MS3456KS24-9S from Corsair is a CONNECTOR

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AFS43-01002600-40-8P-44

L3 Narda-MITEQ
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AFS43-01002600-40-8P-44 from L3 Narda-MITEQ is a IC RF AMP GPS 1GHZ-26GHZ MODULE

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MT53E1G32D2NP-053 RS WT:C

Micron Technology Inc.
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MT53E1G32D2NP-053 RS WT:C from Micron Technology Inc. is a LPDDR4 32G 1GX32 FBGA

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SPMWH3228FD7WAQMSC

Samsung Semiconductor, Inc.
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SPMWH3228FD7WAQMSC from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERIES 2835 0.5

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ACPM-7372-TR1

Broadcom Limited
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ACPM-7372-TR1 from Broadcom Limited is a IC AMP W-CDMA 880-915MHZ 10SMD

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AMF-5B-13501450-70-30P

L3 Narda-MITEQ
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AMF-5B-13501450-70-30P from L3 Narda-MITEQ is a AMPLIFIER - MEDIUM POWER

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JSWK2-27502850-30-8P

L3 Narda-MITEQ
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JSWK2-27502850-30-8P from L3 Narda-MITEQ is a AMPLIFIER

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MS27505E21Z75PA

Corsair
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MS27505E21Z75PA from Corsair is a MS27505E21Z75PA

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SPHWW1HDN948YHW3EC

Samsung Semiconductor, Inc.
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SPHWW1HDN948YHW3EC from Samsung Semiconductor, Inc. is a LED COB LC008B WARM WHT SQ 2700K

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SPC5742PFK1AMLQ8

Texas Instruments
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SPC5742PFK1AMLQ8 from Texas Instruments is a MPC5742P - PANTHER-1.5MB NVM, 2

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JANTX1N3346B

Microchip Technology
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JANTX1N3346B from Microchip Technology is a ZENER DIODE

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MT48LC8M16A2P-6A AAT:L TR by Micron Technology Inc. - IC DRAM 128MBIT PAR 54TSOP II

MT48LC8M16A2P-6A AAT:L TR

Micron Technology Inc.
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MT48LC8M16A2P-6A AAT:L TR from Micron Technology Inc. is a IC DRAM 128MBIT PAR 54TSOP II

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MTM862270LBF by Panasonic Electronic Components - MOSFET N-CH 20V 2.2A WSSMINI6-F1

MTM862270LBF

Panasonic Electronic Components
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MTM862270LBF from Panasonic Electronic Components is a MOSFET N-CH 20V 2.2A WSSMINI6-F1

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MT28F800B5WG-8 TET TR by Micron Technology Inc. - IC FLASH 8MBIT PARALLEL 48TSOP I

MT28F800B5WG-8 TET TR

Micron Technology Inc.
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MT28F800B5WG-8 TET TR from Micron Technology Inc. is a IC FLASH 8MBIT PARALLEL 48TSOP I

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MT47H64M8CF-25E:G TR by Micron Technology Inc. - IC DRAM 512MBIT PARALLEL 60FBGA

MT47H64M8CF-25E:G TR

Micron Technology Inc.
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MT47H64M8CF-25E:G TR from Micron Technology Inc. is a IC DRAM 512MBIT PARALLEL 60FBGA

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SPMWH22296Q5SGQ0S1

Samsung Semiconductor, Inc.
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SPMWH22296Q5SGQ0S1 from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERIES 2835 0.5

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SPMWH1229AQ7SGQ0SB

Samsung Semiconductor, Inc.
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SPMWH1229AQ7SGQ0SB from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERIES 2835 1.0

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AOZ8S212UD4-03

Alpha & Omega Semiconductor Inc.
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AOZ8S212UD4-03 from Alpha & Omega Semiconductor Inc. is a 4CH 3V 0.2PF UNIDIRECTIONAL TVS

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SPMWH1229AQ5SGVKSA

Samsung Semiconductor, Inc.
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SPMWH1229AQ5SGVKSA from Samsung Semiconductor, Inc. is a LED LM283B+ WARM WHT 3000K SMD

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SPMWH3228FD7WAU0S4

Samsung Semiconductor, Inc.
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SPMWH3228FD7WAU0S4 from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERIES 2835 0.5

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SPMWH1229AQ7SGV0SB

Samsung Semiconductor, Inc.
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SPMWH1229AQ7SGV0SB from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERIES 2835 1.0

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SPMWH1221FQ7GBWMSB

Samsung Semiconductor, Inc.
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SPMWH1221FQ7GBWMSB from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERES 2835 6V R

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SPMWH1229AQ5SGP0SB

Samsung Semiconductor, Inc.
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SPMWH1229AQ5SGP0SB from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERIES 2835 1.0

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SPMWHT541MP5WATGS4

Samsung Semiconductor, Inc.
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SPMWHT541MP5WATGS4 from Samsung Semiconductor, Inc. is a LED LM561B NEUT WHT 4000K 4SMD

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SPMWH1228FD7WAP0S2

Samsung Semiconductor, Inc.
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SPMWH1228FD7WAP0S2 from Samsung Semiconductor, Inc. is a LED LM281B COOL WHT 6500K 2SMD

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SPMWH3228FD7WAP0S4

Samsung Semiconductor, Inc.
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SPMWH3228FD7WAP0S4 from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERIES 2835 0.5

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SPMWH1221FQ5GBW0SA

Samsung Semiconductor, Inc.
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SPMWH1221FQ5GBW0SA from Samsung Semiconductor, Inc. is a MIDDLE POWER LED SERES 2835 6V R

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P4KE16A-BP

Micro Commercial Co
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P4KE16A-BP from Micro Commercial Co is a Interface

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MT48LC16M8A2TG-75 IT:G TR by Micron Technology Inc. - IC DRAM 128MBIT PAR 54TSOP II

MT48LC16M8A2TG-75 IT:G TR

Micron Technology Inc.
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MT48LC16M8A2TG-75 IT:G TR from Micron Technology Inc. is a IC DRAM 128MBIT PAR 54TSOP II

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HTNFET-D by Honeywell Aerospace - MOSFET N-CH 55V 8CDIP

HTNFET-D

Honeywell Aerospace
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HTNFET-D from Honeywell Aerospace is a MOSFET N-CH 55V 8CDIP

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MT48LC8M16A2B4-6A AIT:L TR by Micron Technology Inc. - IC DRAM 128MBIT PAR 54VFBGA

MT48LC8M16A2B4-6A AIT:L TR

Micron Technology Inc.
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MT48LC8M16A2B4-6A AIT:L TR from Micron Technology Inc. is a IC DRAM 128MBIT PAR 54VFBGA

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MT48LC32M8A2P-6A:D TR by Micron Technology Inc. - IC DRAM 256MBIT PAR 54TSOP II

MT48LC32M8A2P-6A:D TR

Micron Technology Inc.
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MT48LC32M8A2P-6A:D TR from Micron Technology Inc. is a IC DRAM 256MBIT PAR 54TSOP II

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MT46H8M16LFBF-6 AT:K TR by Micron Technology Inc. - IC DRAM 128MBIT PAR 60VFBGA

MT46H8M16LFBF-6 AT:K TR

Micron Technology Inc.
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MT46H8M16LFBF-6 AT:K TR from Micron Technology Inc. is a IC DRAM 128MBIT PAR 60VFBGA

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MRF8S21120HSR3 by NXP USA Inc. - FET RF 65V 2.17GHZ NI780HS

MRF8S21120HSR3

NXP USA Inc.
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MRF8S21120HSR3 from NXP USA Inc. is a FET RF 65V 2.17GHZ NI780HS

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MRF8P20160HSR3 by NXP USA Inc. - FET RF 2CH 65V 1.92GHZ

MRF8P20160HSR3

NXP USA Inc.
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MRF8P20160HSR3 from NXP USA Inc. is a FET RF 2CH 65V 1.92GHZ

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MT47H128M8CF-3 AAT:H TR

Micron Technology Inc.
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MT47H128M8CF-3 AAT:H TR from Micron Technology Inc. is a IC DRAM 1GBIT PARALLEL 60FBGA

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MT46H32M16LFBF-6 AIT:C TR by Micron Technology Inc. - IC DRAM 512MBIT PAR 60VFBGA

MT46H32M16LFBF-6 AIT:C TR

Micron Technology Inc.
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MT46H32M16LFBF-6 AIT:C TR from Micron Technology Inc. is a IC DRAM 512MBIT PAR 60VFBGA

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VHT6.8M100 by NTE Electronics, Inc - ALUMIN CAP 6.8UF 20% 100V RADIAL

VHT6.8M100

NTE Electronics, Inc
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VHT6.8M100 from NTE Electronics, Inc is a ALUMIN CAP 6.8UF 20% 100V RADIAL

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MT47H256M8THN-25E:M TR

Micron Technology Inc.
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MT47H256M8THN-25E:M TR from Micron Technology Inc. is a IC DRAM 2GBIT PARALLEL 63FBGA

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IPD088N06N3GATMA1 by Infineon Technologies - MOSFET N-CH 60V 50A TO252-3

IPD088N06N3GATMA1

Infineon Technologies
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IPD088N06N3GATMA1 from Infineon Technologies is a MOSFET N-CH 60V 50A TO252-3

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BUK664R6-40C,118 by Nexperia USA Inc. - MOSFET N-CH 40V 100A D2PAK

BUK664R6-40C,118

Nexperia USA Inc.
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BUK664R6-40C,118 from Nexperia USA Inc. is a MOSFET N-CH 40V 100A D2PAK

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MT48LC64M8A2TG-75:C TR by Micron Technology Inc. - IC DRAM 512MBIT PAR 54TSOP II

MT48LC64M8A2TG-75:C TR

Micron Technology Inc.
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MT48LC64M8A2TG-75:C TR from Micron Technology Inc. is a IC DRAM 512MBIT PAR 54TSOP II

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IXTA38N15T by IXYS - MOSFET N-CH 150V 38A TO263

IXTA38N15T

IXYS
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IXTA38N15T from IXYS is a MOSFET N-CH 150V 38A TO263

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