Search results for “GDX-P”

The XP231P02013R-G from Torex Semiconductor Ltd is a P-channel MOSFET rated 30 V and 200 mA (Tc), with 350 mW (Ta) power dissipation, for surface mounting in a SOT-323-3A package.

The GD25VQ20CTIG from GigaDevice Semiconductor (HK) Limited is a 2 Mbit flash memory Integrated Circuit with an SPI Quad I/O interface in an 8-SOP package.

The SIR165DP-T1-GE3 from Vishay Siliconix is a P-channel MOSFET rated 30 V and 60 A (Tc), 69.4 W (Tc), in a surface-mount PowerPAK SO-8 package.

The GD25VQ80CTIG from GigaDevice Semiconductor (HK) Limited is a 8 Mbit SPI quad I/O flash memory Integrated Circuit in an 8-SOP package.

The GDZ16B-E3-18 from Vishay General Semiconductor - Diodes Division is a 16 V, 200 mW Zener diode in a SOD-323 package.

The TGP-P11/7-C from Ferroxcube is a tag plate for P 11 x 7 coil formers and mounts.

The GD25D05CTIG from GigaDevice Semiconductor (HK) Limited is a 512 Kbit NOR flash memory Integrated Circuit with SPI dual I/O, 100 MHz, in an 8-SOP package.

The GD25VE20CSIG from GigaDevice Semiconductor (HK) Limited is a 2 Mbit NOR flash memory Integrated Circuit with SPI quad I/O, 104 MHz, in an 8-SOP package.

The GDZ11LP3-7 from Diodes Incorporated is an 11 V ±5% Zener diode rated 250 mW for surface mounting, in an X3-DFN0603-2 package.

The GD25Q80EEIGR from GigaDevice Semiconductor (HK) Limited is an 8 Mbit NOR flash memory Integrated Circuit with SPI Quad I/O interface, 133 MHz clock and 7 ns access time, in an 8-USON (2x3) package.

The GDZ16B-HG3-18 from Vishay General Semiconductor - Diodes Division is a 16 V, 200 mW ±2% Zener diode for surface mounting, in an SOD-323 package.

The SQ2303ES-T1_GE3 from Vishay Siliconix is a P-channel MOSFET rated 30 V and 2.5 A (Tc) at 1.9 W (Tc), for surface mounting in a SOT-23-3 (TO-236) package.

The PMV100EPAR from Nexperia USA Inc. is a 60 V, 2.2 A (Ta) P-channel MOSFET rated 710 mW (Ta) and 8.3 W (Tc), in a surface-mount TO-236AB package.

The SQ4425EY-T1_BE3 from Vishay Siliconix is a 30 V, 18 A (Tc) P-channel MOSFET rated 6.8 W (Tc), in a surface-mount 8-SOIC package.

The SI8429DB-T1-E1 from Vishay Siliconix is a P-channel MOSFET rated 8 V and 11.7 A (Tc), with 2.77 W (Ta) and 6.25 W (Tc) power dissipation, in a surface-mount 4-Microfoot package.

The NX2301P,215 from Nexperia USA Inc. is a P-channel MOSFET rated 20 V and 2 A (Ta), with 400 mW (Ta) and 2.8 W (Tc) power dissipation, in a surface-mount TO-236AB package.

The IRFR9220TRPBF from Vishay Siliconix is a P-channel MOSFET rated 200 V and 3.6 A (Tc), with 2.5 W (Ta) and 42 W (Tc) power dissipation, for surface mounting in a D-Pak package.

The DMP3165L-13 from Diodes Incorporated is a 30 V P-channel MOSFET rated 3.3 A (Ta) and 800 mW (Ta), in a surface-mount SOT-23-3 package.

The MCU50P06Y-TP from Micro Commercial Co is a P-channel MOSFET in a DPAK package.

The FDW2504P from Fairchild Semiconductor is a small-signal P-channel MOSFET.

The MIC2033-08AYMT-TR from Microchip Technology is a 1:1 P-channel power switch/driver Integrated Circuit rated 800 mA, in a 6-TDFN (2x2) package.

The SI4413DDY-T1-GE3 from Vishay Siliconix is a P-channel MOSFET in a surface-mount 8-SOIC package.

The IRFD9014PBF from Vishay Siliconix is a P-channel MOSFET rated 60 V and 1.1 A (Ta), with 1.3 W (Ta) power dissipation, in a through-hole 4-HVMDIP package.

The G120P03S2 from Goford Semiconductor is a -30 V, -16 A P-channel MOSFET array rated 1.4 W (Tc), in a surface-mount 8-SOP package, with on-resistance below 14 mΩ at -10 V.

The SI3499DV-T1-BE3 from Vishay Siliconix is a P-channel 8 V, 5.3 A (Ta) MOSFET rated 1.1 W (Ta), in a surface-mount 6-TSOP package with 1.5 V gate-source drive.

The NVF5P03T3G from onsemi is a P-channel MOSFET rated 30 V and 3.7 A (Ta) with 1.56 W (Ta) power, in a surface-mount SOT-223 (TO-261) package.

The FQPF11P06 from onsemi is a P-channel MOSFET rated 60 V and 8.6 A in a TO-220F package.

The MHQ1005P6N2CT000 from TDK Corporation is a 6.2 nH unshielded multilayer inductor rated 700 mA with a 130 mΩ maximum resistance, in a 0402 (1005 metric) package.

The FDMC86139P from onsemi is a P-channel MOSFET rated 100 V, 4.4 A (Ta) and 15 A (Tc), with 2.3 W (Ta) and 40 W (Tc) power dissipation, in a surface-mount 8-MLP (3.3x3.3) package.