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P4SMA36CAHE3/5A by Vishay General Semiconductor - Diodes Division - TVS DIODE 30.8VWM 49.9VC DO214AC

P4SMA36CAHE3/5A

Vishay General Semiconductor - Diodes Division
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P4SMA36CAHE3/5A from Vishay General Semiconductor - Diodes Division is a TVS DIODE 30.8VWM 49.9VC DO214AC

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UPC3224TB-E3-A by CEL - IC AMP DBS 2.8GHZ-3.2GHZ 6SUPER

UPC3224TB-E3-A

CEL
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UPC3224TB-E3-A from CEL is a IC AMP DBS 2.8GHZ-3.2GHZ 6SUPER

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AFS4-04000800-40-23P-4

L3 Narda-MITEQ
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AFS4-04000800-40-23P-4 from L3 Narda-MITEQ is a IC RF AMP GPS 4GHZ-8GHZ MODULE

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SM4F14A-MS-Q1 by Formosa Microsemi Co., Ltd. - TVS SMD 14V 400W Uni-directiona

SM4F14A-MS-Q1

Formosa Microsemi Co., Ltd.
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SM4F14A-MS-Q1 from Formosa Microsemi Co., Ltd. is a TVS SMD 14V 400W Uni-directiona

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2N4416A-2 by Vishay Siliconix - JFET N-CH 35V TO206AF

2N4416A-2

Vishay Siliconix
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2N4416A-2 from Vishay Siliconix is a JFET N-CH 35V TO206AF

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SI4906DY-T1-E3 by Vishay Siliconix - MOSFET 2N-CH 40V 6.6A 8-SOIC

SI4906DY-T1-E3

Vishay Siliconix
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SI4906DY-T1-E3 from Vishay Siliconix is a MOSFET 2N-CH 40V 6.6A 8-SOIC

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JS4-40006000-65-0P

L3 Narda-MITEQ
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JS4-40006000-65-0P from L3 Narda-MITEQ is a AMPLIFIER - OCTAVE BAND

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P4SMA250A-E3/61 by Vishay General Semiconductor - Diodes Division - TVS DIODE 214VWM 344VC DO214AC

P4SMA250A-E3/61

Vishay General Semiconductor - Diodes Division
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P4SMA250A-E3/61 from Vishay General Semiconductor - Diodes Division is a TVS DIODE 214VWM 344VC DO214AC

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ST16C654CQ100 by Sipex - SIPEX VIDEO AMP 1 CHANNEL 1 FUNC

ST16C654CQ100

Sipex
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ST16C654CQ100 from Sipex is a SIPEX VIDEO AMP 1 CHANNEL 1 FUNC

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WR06X4531FTL by Walsin Technology Corporation - RESISTOR 4.53K OHM 1% 1/10W 0603

WR06X4531FTL

Walsin Technology Corporation
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WR06X4531FTL from Walsin Technology Corporation is a RESISTOR 4.53K OHM 1% 1/10W 0603

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MT46V64M16P-75:A TR by Micron Technology Inc. - IC DRAM 1GBIT PARALLEL 66TSOP

MT46V64M16P-75:A TR

Micron Technology Inc.
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MT46V64M16P-75:A TR from Micron Technology Inc. is a IC DRAM 1GBIT PARALLEL 66TSOP

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BZW04-9V4HR1G by Taiwan Semiconductor Corporation - TVS DIODE 9.4VWM 15.6VC DO204AL

BZW04-9V4HR1G

Taiwan Semiconductor Corporation
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BZW04-9V4HR1G from Taiwan Semiconductor Corporation is a TVS DIODE 9.4VWM 15.6VC DO204AL

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SMBJ6.0CAHM4G by Taiwan Semiconductor Corporation - TVS DIODE 6VWM 10.3VC DO214AA

SMBJ6.0CAHM4G

Taiwan Semiconductor Corporation
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SMBJ6.0CAHM4G from Taiwan Semiconductor Corporation is a TVS DIODE 6VWM 10.3VC DO214AA

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WR04X4321FTL by Walsin Technology Corporation - RESISTOR 4.32K OHM 1% 1/16W 0402

WR04X4321FTL

Walsin Technology Corporation
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WR04X4321FTL from Walsin Technology Corporation is a RESISTOR 4.32K OHM 1% 1/16W 0402

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JS4-12004000-60-6P-SP

L3 Narda-MITEQ
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JS4-12004000-60-6P-SP from L3 Narda-MITEQ is a AMPLIFIER

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1.5SMC62A R6G by Taiwan Semiconductor Corporation - TVS DIODE 1500W DO214AB SMC

1.5SMC62A R6G

Taiwan Semiconductor Corporation
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1.5SMC62A R6G from Taiwan Semiconductor Corporation is a TVS DIODE 1500W DO214AB SMC

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AFS4-03400420-50-20P-6-S1

L3 Narda-MITEQ
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AFS4-03400420-50-20P-6-S1 from L3 Narda-MITEQ is a AMPLIFIER

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VESD05A4A-HS4-GS08 by Vishay General Semiconductor - Diodes Division - TVS DIODE 5VWM 12VC LLP1010-6L

VESD05A4A-HS4-GS08

Vishay General Semiconductor - Diodes Division
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VESD05A4A-HS4-GS08 from Vishay General Semiconductor - Diodes Division is a TVS DIODE 5VWM 12VC LLP1010-6L

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AFS6-04000800-15-15P-6-M

L3 Narda-MITEQ
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AFS6-04000800-15-15P-6-M from L3 Narda-MITEQ is a AMPLIFIER

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MT41K256M16TW-17 XIT:P TR by Micron Technology Inc. - IC DRAM 4GBIT PARALLEL 96FBGA

MT41K256M16TW-17 XIT:P TR

Micron Technology Inc.
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MT41K256M16TW-17 XIT:P TR from Micron Technology Inc. is a IC DRAM 4GBIT PARALLEL 96FBGA

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UPW1J4R7MDD1TA by Nichicon - ALUMIN CAP 4.7UF 20% 63V RADIAL

UPW1J4R7MDD1TA

Nichicon
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UPW1J4R7MDD1TA from Nichicon is a ALUMIN CAP 4.7UF 20% 63V RADIAL

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UPW1E390MDH6 by Nichicon - ALUMIN CAP 39UF 20% 25V RADIAL

UPW1E390MDH6

Nichicon
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UPW1E390MDH6 from Nichicon is a ALUMIN CAP 39UF 20% 25V RADIAL

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P6SMB480AHE3_A/I by Vishay General Semiconductor - Diodes Division - TVS DIODE 408VWM 658VC DO214AA

P6SMB480AHE3_A/I

Vishay General Semiconductor - Diodes Division
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P6SMB480AHE3_A/I from Vishay General Semiconductor - Diodes Division is a TVS DIODE 408VWM 658VC DO214AA

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RFD4N06LSM9A by onsemi - MOSFET N-CH 60V 4A TO252AA

RFD4N06LSM9A

onsemi
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RFD4N06LSM9A from onsemi is a MOSFET N-CH 60V 4A TO252AA

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NVD6416ANLT4G-001-VF01 by onsemi - NVD6416 - N-CHANNEL POWER MOSFET

NVD6416ANLT4G-001-VF01

onsemi
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NVD6416ANLT4G-001-VF01 from onsemi is a NVD6416 - N-CHANNEL POWER MOSFET

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CY14ME064Q2A-SXI by Infineon Technologies - IC NVSRAM 64KBIT SPI 40MHZ 8SOIC

CY14ME064Q2A-SXI

Infineon Technologies
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CY14ME064Q2A-SXI from Infineon Technologies is a IC NVSRAM 64KBIT SPI 40MHZ 8SOIC

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UNR422400A by Panasonic Electronic Components - TRANS PREBIAS NPN 300MW NS-B1

UNR422400A

Panasonic Electronic Components
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UNR422400A from Panasonic Electronic Components is a TRANS PREBIAS NPN 300MW NS-B1

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ASTMUPCE-33-60.000MHZ-LY-E-T3 by Abracon LLC - MEMS OSC XO 60.0000MHZ LVCMOS

ASTMUPCE-33-60.000MHZ-LY-E-T3

Abracon LLC
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ASTMUPCE-33-60.000MHZ-LY-E-T3 from Abracon LLC is a MEMS OSC XO 60.0000MHZ LVCMOS

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BZX84-A5V6/LF1R by NXP USA Inc. - DIODE ZENER 5.6V 250MW TO236AB

BZX84-A5V6/LF1R

NXP USA Inc.
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BZX84-A5V6/LF1R from NXP USA Inc. is a DIODE ZENER 5.6V 250MW TO236AB

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BZX84-C6V2/LF1R by NXP USA Inc. - DIODE ZENER 6.2V 250MW TO236AB

BZX84-C6V2/LF1R

NXP USA Inc.
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BZX84-C6V2/LF1R from NXP USA Inc. is a DIODE ZENER 6.2V 250MW TO236AB

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BZX84-B6V8/LF1R by NXP USA Inc. - DIODE ZENER 6.8V 250MW TO236AB

BZX84-B6V8/LF1R

NXP USA Inc.
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BZX84-B6V8/LF1R from NXP USA Inc. is a DIODE ZENER 6.8V 250MW TO236AB

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MRF6S19060NBR1 by NXP USA Inc. - FET RF 68V 1.93GHZ TO272-4

MRF6S19060NBR1

NXP USA Inc.
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MRF6S19060NBR1 from NXP USA Inc. is a FET RF 68V 1.93GHZ TO272-4

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MRF6VP3450HR6

Freescale Semiconductor
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MRF6VP3450HR6 from Freescale Semiconductor is a RF ULTRA HIGH FREQUENCY BAND, N-

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XR16V2752IL-F by MaxLinear, Inc. - IC UART FIFO 64B DUAL 32QFN

XR16V2752IL-F

MaxLinear, Inc.
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XR16V2752IL-F from MaxLinear, Inc. is a IC UART FIFO 64B DUAL 32QFN

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MT46H32M16LFBF-6 AT:C by Micron Technology Inc. - IC DRAM 512MBIT PAR 60VFBGA

MT46H32M16LFBF-6 AT:C

Micron Technology Inc.
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MT46H32M16LFBF-6 AT:C from Micron Technology Inc. is a IC DRAM 512MBIT PAR 60VFBGA

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AFSX4-00950175-06-15P-6N-BTO

L3 Narda-MITEQ
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AFSX4-00950175-06-15P-6N-BTO from L3 Narda-MITEQ is a AMPLIFIER

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MT42L256M64D4LD-25 WT:A TR

Micron Technology Inc.
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MT42L256M64D4LD-25 WT:A TR from Micron Technology Inc. is a IC DRAM 16GBIT PARALLEL 220FBGA

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1N6286A-E3/51 by Vishay General Semiconductor - Diodes Division - TVS DIODE 36.8VWM 59.3VC 1.5KE

1N6286A-E3/51

Vishay General Semiconductor - Diodes Division
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1N6286A-E3/51 from Vishay General Semiconductor - Diodes Division is a TVS DIODE 36.8VWM 59.3VC 1.5KE

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GT065P06T by Goford Semiconductor - P-60V,-82A,RD(MAX)<7.5M@-10V,VTH

GT065P06T

Goford Semiconductor
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GT065P06T from Goford Semiconductor is a P-60V,-82A,RD(MAX)<7.5M@-10V,VTH

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DG441LDY by Vishay Siliconix - IC SWITCH SPST-NCX4 30OHM 16SOIC

DG441LDY

Vishay Siliconix
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DG441LDY from Vishay Siliconix is a IC SWITCH SPST-NCX4 30OHM 16SOIC

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AFS4-03000600-10-10P-4-GW

L3 Narda-MITEQ
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AFS4-03000600-10-10P-4-GW from L3 Narda-MITEQ is a AMPLIFIER

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MT46H16M16LFBF-6 IT:H TR by Micron Technology Inc. - IC DRAM 256MBIT PAR 60VFBGA

MT46H16M16LFBF-6 IT:H TR

Micron Technology Inc.
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MT46H16M16LFBF-6 IT:H TR from Micron Technology Inc. is a IC DRAM 256MBIT PAR 60VFBGA

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AFS4-00100600-13-10P-4

L3 Narda-MITEQ
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AFS4-00100600-13-10P-4 from L3 Narda-MITEQ is a IC RF AMP GPS 100MHZ-6GHZ MODULE

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D38999/26ZJ4SN by Conesys - CONNECTOR PLUG FMALE 56POS CRIMP

D38999/26ZJ4SN

Conesys
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D38999/26ZJ4SN from Conesys is a CONNECTOR PLUG FMALE 56POS CRIMP

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BZW06-26 B0G by Taiwan Semiconductor Corporation - TVS DIODE 25.6VWM 53.5VC DO204AC

BZW06-26 B0G

Taiwan Semiconductor Corporation
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BZW06-26 B0G from Taiwan Semiconductor Corporation is a TVS DIODE 25.6VWM 53.5VC DO204AC

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JS4-36004000-33-8P

L3 Narda-MITEQ
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JS4-36004000-33-8P from L3 Narda-MITEQ is a IC RF AMP GPS 36GHZ-40GHZ MODULE

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TMPG06-22A-E3/73 by Vishay General Semiconductor - Diodes Division - TVS DIODE 18.8VWM 30.6VC MPG06

TMPG06-22A-E3/73

Vishay General Semiconductor - Diodes Division
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TMPG06-22A-E3/73 from Vishay General Semiconductor - Diodes Division is a TVS DIODE 18.8VWM 30.6VC MPG06

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DS90LV047ATMTCX/NOPB by National Semiconductor - DS90LV047A 400-MBPS LVDS QUAD HI

DS90LV047ATMTCX/NOPB

National Semiconductor
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DS90LV047ATMTCX/NOPB from National Semiconductor is a DS90LV047A 400-MBPS LVDS QUAD HI

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