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The BGA8V1BN6E6327XTSA1 from Infineon Technologies is a Radio Frequency amplifier Integrated Circuit covering 3.4 to 3.8 GHz, in a PG-TSNP-6-2 package.

The PUMB2/DG/B4X from Nexperia USA Inc. is a dual PNP pre-biased bipolar (BJT) transistor array rated 50 V and 100 mA, with a 180 MHz transition frequency and 300 mW power, in a surface-mount 6-TSSOP package.

The BGF 100 E6327 from Infineon Technologies is a 2-channel audio volume control Integrated Circuit in an S-WLP-11 package.

The BC857B/DG/B3215 from NXP USA Inc. is a PNP bipolar (BJT) transistor rated 45 V and 100 mA, with a 100 MHz transition frequency and 250 mW power dissipation, in a surface-mount TO-236AB package.

The BC53PAS115 from NXP USA Inc. is a small-signal bipolar (BJT) transistor.

The BC846S/DG/B3F from Nexperia USA Inc. is a bipolar (BJT) transistor array with 2 NPN (dual) transistors rated 65 V, 100 mA, 100 MHz and 300 mW, in a surface-mount 6-TSSOP (SC-88) package.

The MT46V32M8FG-75 L:G TR from Micron Technology Inc. is a 256 Mbit parallel DDR SDRAM memory Integrated Circuit with a 133 MHz clock and 750 ps access time, in a 60-FBGA (8x14) package.

The PUMB1/DG/B4X from Nexperia USA Inc. is a dual PNP pre-biased bipolar (BJT) transistor array rated 50 V and 100 mA, with a 180 MHz transition frequency and 300 mW power, in a surface-mount 6-TSSOP package.

The BC856AW,135 from Nexperia USA Inc. is a PNP bipolar (BJT) transistor rated 65 V and 100 mA with a transition frequency of 100 MHz and 200 mW power dissipation, in a surface-mount SOT-323 package.

The MT47H64M16HR-3:H from Micron Technology Inc. is a DDR2 SDRAM memory Integrated Circuit with a 1 Gbit parallel interface at 333 MHz and 450 ps, in an 84-FBGA (8x12.5) package.

The PUMD2/DG/B4X from Nexperia USA Inc. is a pre-biased bipolar transistor (BJT) combining 1 NPN and 1 PNP, rated 50 V and 100 mA, with 230 MHz and 180 MHz transition frequencies and 300 mW power dissipation, in a surface-mount 6-TSSOP package.

The BC848W/DG/B2115 from NXP USA Inc. is a small-signal bipolar (BJT) transistor.

The BC51-10PAS115 from NXP USA Inc. is a small-signal bipolar (BJT) transistor.

The MT46V128M4BN-75:D from Micron Technology Inc. is a DDR SDRAM memory Integrated Circuit with 512 Mbit capacity, a parallel interface, a 133 MHz clock and 750 ps timing, in a 60-FBGA (10x12.5) package.

The PUMD2/DG/B3,135 from Nexperia USA Inc. is a pre-biased bipolar transistor (BJT) combining 1 NPN and 1 PNP, rated 50 V and 100 mA, with 230 MHz and 180 MHz transition frequencies and 300 mW power dissipation, in a surface-mount 6-TSSOP package.

BCM846BSX from Nexperia USA Inc. is a TRANS 2NPN 65V 0.1A SC-88

The BC51PAS115 from NXP USA Inc. is a small-signal bipolar (BJT) transistor.