Search results for “2N5551”

The 2N5551 from Diodes Incorporated is an NPN bipolar (BJT) transistor rated 160 V and 200 mA, with a 300 MHz transition frequency and 625 mW power, in a through-hole TO-92 package.

The 2N5551 from NTE Electronics, Inc is an NPN bipolar (BJT) single transistor rated 160 V and 200 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 package.

The 2N5551 from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551 from Diotec Semiconductor is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power, in a through-hole TO-92 package.

The 2N5551 TIN/LEAD from Central Semiconductor Corp is an NPN bipolar (BJT) transistor rated 160 V and 600 mA with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551 from Fairchild Semiconductor is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551-AP from Micro Commercial Co is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 package.

The 2N5551-BP from Micro Commercial Co is an NPN bipolar junction transistor (BJT) rated 160 V and 0.6 A in a TO-92 package.

The 2N5551YBU from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551RLRAG from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551RLRA from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551RL1 from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551RLRPG from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551TF from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551_J61Z from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551_J18Z from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551TA from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551ZL1 from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551RLRP from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551TAR from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551RLRM from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551BU from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551_J05Z from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551ZL1G from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551YTA from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551TFR from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551CBU from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

2N5551G from onsemi is a TRANS NPN 160V 0.6A TO92

The 2N5551BU from Fairchild Semiconductor is a 2N5551 small-signal bipolar transistor (BJT).

The 2N5551TF from Fairchild Semiconductor is a 2N5551 small-signal bipolar transistor (BJT).

The 2N5551CTA from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551RL1G from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551RLRMG from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551CYTA from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

CP336V-2N5551-CT from Central Semiconductor Corp is a TRANS NPN 160V 0.6A DIE 1=400

The CP336V-2N5551-CT20 from Central Semiconductor Corp is an NPN bipolar (BJT) transistor rated 160 V and 0.6 A in die form, in a 20-piece pack (1=20PCS).

The 2N5551,412 from NXP USA Inc. is an NPN bipolar (BJT) transistor rated 160 V and 0.3 A in a TO92-3 package.

The 2N5551,116 from NXP USA Inc. is an NPN bipolar (BJT) transistor rated 160 V and 0.3 A in a TO92-3 package.

The 2N5551YBU from Fairchild Semiconductor is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551YTA from Fairchild Semiconductor is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.