Search results for “2n5555”

The 2N5555 from onsemi is an N-channel JFET rated 25 V and 15 mA, in a TO-92-3 package.

The 2N5555_D74Z from onsemi is an N-channel Radio Frequency JFET in a TO-92-3 package.

The 2N5552 from Microchip Technology is a PNP bipolar (BJT) transistor rated 80 V and 10 A at 15 W, in a through-hole TO-5AA package.

The 2N5551 from Diodes Incorporated is an NPN bipolar (BJT) transistor rated 160 V and 200 mA, with a 300 MHz transition frequency and 625 mW power, in a through-hole TO-92 package.

The 2N5551 TIN/LEAD from Central Semiconductor Corp is an NPN bipolar (BJT) transistor rated 160 V and 600 mA with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551-AP from Micro Commercial Co is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 package.

The 2N5551 from NTE Electronics, Inc is an NPN bipolar (BJT) single transistor rated 160 V and 200 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 package.

The 2N5551-BP from Micro Commercial Co is an NPN bipolar junction transistor (BJT) rated 160 V and 0.6 A in a TO-92 package.

The 2N5551RLRAG from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551 from Diotec Semiconductor is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power, in a through-hole TO-92 package.

The 2N5551YBU from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551,412 from NXP USA Inc. is an NPN bipolar (BJT) transistor rated 160 V and 0.3 A in a TO92-3 package.

The 2N5551 from Fairchild Semiconductor is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551YTA from Fairchild Semiconductor is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551_J05Z from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5550 from NTE Electronics, Inc is an NPN bipolar (BJT) single transistor rated 140 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551BU from Fairchild Semiconductor is a 2N5551 small-signal bipolar transistor (BJT).

The 2N5550 from onsemi is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5550G from onsemi is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551YBU from Fairchild Semiconductor is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551TF from Fairchild Semiconductor is a 2N5551 small-signal bipolar transistor (BJT).

The 2N5550/D26Z from Fairchild Semiconductor is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz frequency and 625 mW power rating, in a through-hole TO-92-3 package.

The 2N5550_D26Z from onsemi is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz frequency and 625 mW power rating, in a through-hole TO-92-3 package.

CP336V-2N5551-CT from Central Semiconductor Corp is a TRANS NPN 160V 0.6A DIE 1=400

2N5550-AP from Micro Commercial Co is a TRANS NPN 140V 0.6A TO92

The 2N5550RLRAG from onsemi is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5550TF from Fairchild Semiconductor is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz frequency and 625 mW power rating, in a through-hole TO-92-3 package.

The 2N5550TA from Fairchild Semiconductor is an NPN bipolar transistor rated 140 V and 0.6 A, in a TO-92-3 package.

The 2N5550BU from Fairchild Semiconductor is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz frequency and 625 mW power rating, in a through-hole TO-92-3 package.

The 2N5551 from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551_J18Z from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5551,116 from NXP USA Inc. is an NPN bipolar (BJT) transistor rated 160 V and 0.3 A in a TO92-3 package.

The 2N5551BU from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5550RLRPG from onsemi is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

2N5551G from onsemi is a TRANS NPN 160V 0.6A TO92

The 2N5550_J24Z from onsemi is an NPN bipolar transistor rated 140 V and 0.6 A, in a TO-92-3 package.

The CP336V-2N5551-CT20 from Central Semiconductor Corp is an NPN bipolar (BJT) transistor rated 160 V and 0.6 A in die form, in a 20-piece pack (1=20PCS).

The 2N5550TAR from onsemi is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz frequency and 625 mW power rating, in a through-hole TO-92-3 package.

The 2N5550TFR from onsemi is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz frequency and 625 mW power rating, in a through-hole TO-92-3 package.

The 2N5550TA from onsemi is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz frequency and 625 mW power rating, in a through-hole TO-92-3 package.

The 2N5551RL1 from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551RLRPG from onsemi is an NPN bipolar junction transistor (BJT) rated 160 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.

The 2N5551TAR from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5550BU from onsemi is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz frequency and 625 mW power rating, in a through-hole TO-92-3 package.

The 2N5551TFR from onsemi is an NPN bipolar (BJT) transistor rated 160 V and 600 mA, with a 100 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92-3 package.

The 2N5550TF from onsemi is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz frequency and 625 mW power rating, in a through-hole TO-92-3 package.

The 2N5550RLRA from onsemi is an NPN bipolar (BJT) transistor rated 140 V and 600 mA, with a 300 MHz transition frequency and 625 mW power dissipation, in a through-hole TO-92 (TO-226) package.