Search results for “71V416S”
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71V416S12PHGI
Renesas Electronics America IncThe 71V416S12PHGI from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4 Mbit parallel capacity and 12 ns access time, in a 44-TSOP II package.
View full details71V416S10PHG
Renesas Electronics America IncThe 71V416S10PHG from Renesas Electronics America Inc is an asynchronous SRAM Integrated Circuit with 4 Mbit parallel memory and a 10 ns access time, in a 44-TSOP II package.
View full details71V416S12PHGI8
Renesas Electronics America IncThe 71V416S12PHGI8 from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4 Mbit parallel capacity and 12 ns access time, in a 44-TSOP II package.
View full details71V416S10PHG8
Renesas Electronics America IncThe 71V416S10PHG8 from Renesas Electronics America Inc is an asynchronous SRAM Integrated Circuit with 4 Mbit parallel memory, 10 ns timing and a 44-TSOP II package.
View full details71V416S12BE8
Renesas Electronics America IncThe 71V416S12BE8 from Renesas Electronics America Inc is an asynchronous SRAM with 4 Mbit parallel memory and a 12 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S15YG
IDT, Integrated Device Technology IncThe 71V416S15YG from IDT, Integrated Device Technology Inc is a 4 Mbit parallel asynchronous SRAM memory Integrated Circuit with a 15 ns access time, in a 44-SOJ package.
View full details71V416S12BE
Renesas Electronics America IncThe 71V416S12BE from Renesas Electronics America Inc is a 4Mbit parallel asynchronous SRAM with a 12 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S15PHG8
Renesas Electronics America IncThe 71V416S15PHG8 from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4 Mbit capacity, a parallel interface and 15 ns access time, in a 44-TSOP II package.
View full details71V416S15PHI
IDT, Integrated Device Technology IncThe 71V416S15PHI from IDT, Integrated Device Technology Inc is an asynchronous SRAM memory Integrated Circuit with a 4Mbit parallel interface rated at 15 ns, in a 44-TSOP II package.
View full details71V416S15PHGI
Renesas Electronics America IncThe 71V416S15PHGI from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4Mbit parallel capacity and 15 ns access time, in a 44-TSOP II package.
View full details71V416S12PHG8
Renesas Electronics America IncThe 71V416S12PHG8 from Renesas Electronics America Inc is a 4 Mbit parallel SRAM Integrated Circuit in a 44-TSOP II package.
View full details71V416S15BE
Renesas Electronics America IncThe 71V416S15BE from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4 Mbit parallel capacity and 15 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S12YG
Renesas Electronics America IncThe 71V416S12YG from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4 Mbit parallel capacity, 12 ns access time, in a 44-SOJ package.
View full details71V416S12PH
IDT, Integrated Device Technology IncThe 71V416S12PH from IDT, Integrated Device Technology Inc is an asynchronous SRAM Integrated Circuit with 4 Mbit parallel memory and 12 ns access time, in a 44-TSOP II package.
View full details71V416S10PHI
IDT, Integrated Device Technology IncThe 71V416S10PHI from IDT, Integrated Device Technology Inc is a 4 Mbit parallel SRAM memory Integrated Circuit in a 44-TSOP II package.
View full details71V416S12YI
IDT, Integrated Device Technology IncThe 71V416S12YI from IDT, Integrated Device Technology Inc is an asynchronous 4Mbit parallel SRAM memory Integrated Circuit with 12 ns access time, in a 44-SOJ package.
View full details71V416S15PHG
Renesas Electronics America IncThe 71V416S15PHG from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4Mbit parallel capacity and 15 ns access time, in a 44-TSOP II package.
View full details71V416S10PH
IDT, Integrated Device Technology IncThe 71V416S10PH from IDT, Integrated Device Technology Inc is a 4 Mbit parallel SRAM memory Integrated Circuit in a 44-TSOP II package.
View full details71V416S15Y
IDT, Integrated Device Technology IncThe 71V416S15Y from IDT, Integrated Device Technology Inc is an asynchronous 4 Mbit parallel SRAM memory Integrated Circuit with 15 ns access time, in a 44-SOJ package.
View full details71V416S10BE
Renesas Electronics America IncThe 71V416S10BE from Renesas Electronics America Inc is an asynchronous SRAM Integrated Circuit with 4Mbit parallel memory and 10 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S10BEG
Renesas Electronics America IncThe 71V416S10BEG from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4 Mbit parallel capacity, 10 ns timing and a 48-CABGA (9x9) package.
View full details71V416S12PHI
IDT, Integrated Device Technology IncThe 71V416S12PHI from IDT, Integrated Device Technology Inc is a 4 Mbit parallel SRAM Integrated Circuit in a 44-TSOP II package.
View full details71V416S12PHG
Renesas Electronics America IncThe 71V416S12PHG from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4 Mbit parallel capacity at 12 ns, in a 44-TSOP II package.
View full details71V416S15PH
IDT, Integrated Device Technology IncThe 71V416S15PH from IDT, Integrated Device Technology Inc is an asynchronous 4 Mbit parallel SRAM memory Integrated Circuit with 15 ns access time, in a 44-TSOP II package.
View full details71V416S12BEG
Renesas Electronics America IncThe 71V416S12BEG from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4 Mbit parallel capacity and 12 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S10BE8
Renesas Electronics America IncThe 71V416S10BE8 from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4 Mbit parallel capacity and 10 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S12BEG
IDT, Integrated Device Technology IncThe 71V416S12BEG from IDT, Integrated Device Technology Inc is a 4 Mbit parallel asynchronous SRAM memory Integrated Circuit with a 12 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S10BE
IDT, Integrated Device Technology IncThe 71V416S10BE from IDT, Integrated Device Technology Inc is a 4 Mbit parallel asynchronous SRAM memory Integrated Circuit with a 10 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S12Y
IDT, Integrated Device Technology IncThe 71V416S12Y from IDT, Integrated Device Technology Inc is a 4 Mbit parallel SRAM Integrated Circuit in a 44-SOJ package.
View full details71V416S12YG
IDT, Integrated Device Technology IncThe 71V416S12YG from IDT, Integrated Device Technology Inc is a 4 Mbit parallel asynchronous SRAM memory Integrated Circuit with a 12 ns access time in a 44-SOJ package.
View full details71V416S12YGI
Renesas Electronics America IncThe 71V416S12YGI from Renesas Electronics America Inc is an asynchronous 4 Mbit parallel SRAM Integrated Circuit with 12 ns timing in a 44-SOJ package.
View full details71V416S15PHGI8
Renesas Electronics America IncThe 71V416S15PHGI8 from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4Mbit parallel capacity, 15 ns access time, in a 44-TSOP II package.
View full details71V416S10PHGI8
Renesas Electronics America IncThe 71V416S10PHGI8 from Renesas Electronics America Inc is an asynchronous SRAM Integrated Circuit with 4 Mbit parallel memory and 10 ns timing, in a 44-TSOP II package.
View full details71V416S15BEG
Renesas Electronics America IncThe 71V416S15BEG from Renesas Electronics America Inc is a 4 Mbit parallel SRAM Integrated Circuit in a 48-CABGA package.
View full details71V416S10BEG8
Renesas Electronics America IncThe 71V416S10BEG8 from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4 Mbit parallel capacity and 10 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S15BEGI8
Renesas Electronics America IncThe 71V416S15BEGI8 from Renesas Electronics America Inc is an asynchronous parallel SRAM memory Integrated Circuit with 4 Mbit capacity and 15 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S15YG
Renesas Electronics America IncThe 71V416S15YG from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4Mbit parallel capacity and 15 ns access time, in a 44-SOJ package.
View full details71V416S12BEG8
Renesas Electronics America IncThe 71V416S12BEG8 from Renesas Electronics America Inc is a 4 Mbit parallel SRAM Integrated Circuit in a 48-CABGA package.
View full details71V416S10PHGI
Renesas Electronics America IncThe 71V416S10PHGI from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with a 4Mbit parallel interface and a 10 ns speed rating, in a 44-TSOP II package.
View full details71V416S15BE8
Renesas Electronics America IncThe 71V416S15BE8 from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with a 4 Mbit parallel organization at 15 ns, in a 48-CABGA (9x9) package.
View full details71V416S15BEGI
Renesas Electronics America IncThe 71V416S15BEGI from Renesas Electronics America Inc is an asynchronous SRAM with 4 Mbit parallel capacity and 15 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S15YGI
IDT, Integrated Device Technology IncThe 71V416S15YGI from IDT, Integrated Device Technology Inc is an asynchronous SRAM memory Integrated Circuit with 4 Mbit parallel capacity and 15 ns access time, in a 44-SOJ package.
View full details71V416S15YI
IDT, Integrated Device Technology IncThe 71V416S15YI from IDT, Integrated Device Technology Inc is an asynchronous SRAM memory Integrated Circuit with a 4Mbit parallel interface and 15 ns access time, in a 44-SOJ package.
View full details71V416S15BEI
Renesas Electronics America IncThe 71V416S15BEI from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4 Mbit parallel capacity and 15 ns access time in a 48-CABGA (9x9) package.
View full details71V416S15BEG8
Renesas Electronics America IncThe 71V416S15BEG8 from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4Mbit parallel interface and 15 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S15BEI8
Renesas Electronics America IncThe 71V416S15BEI8 from Renesas Electronics America Inc is an asynchronous SRAM memory Integrated Circuit with 4Mbit parallel interface and 15 ns access time, in a 48-CABGA (9x9) package.
View full details71V416S15YG8
Renesas Electronics America IncThe 71V416S15YG8 from Renesas Electronics America Inc is a 4 Mbit parallel SRAM memory Integrated Circuit in a 44-SOJ package.
View full details71V416S12BEI8
Renesas Electronics America IncThe 71V416S12BEI8 from Renesas Electronics America Inc is an asynchronous 4 Mbit parallel SRAM memory Integrated Circuit rated 12 ns, in a 48-CABGA (9x9) package.
View full details