Search results for “71V67603”

The 71V67603S133PFGI from Renesas Electronics America Inc is a synchronous SDR SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 133 MHz clock and 4.2 ns access time, in a 100-TQFP (14x14) package.

The 71V67603S150BQ8 from Renesas Electronics America Inc is a synchronous SDR SRAM Integrated Circuit with 9 Mbit parallel memory, 150 MHz operation and 3.8 ns timing, in a 165-CABGA (13x15) package.

The 71V67603S150BQ from IDT, Integrated Device Technology Inc is a synchronous SDR SRAM with 9 Mbit parallel memory, 150 MHz clock and 3.8 ns access time, in a 165-CABGA (13x15) package.

The 71V67603S150PFG from Renesas Electronics America Inc is a synchronous SDR SRAM Integrated Circuit with 9 Mbit parallel memory rated 150 MHz and 3.8 ns, in a 100-TQFP (14x14) package.

The 71V67603S133PFG from IDT, Integrated Device Technology Inc is a synchronous SDR SRAM with 9 Mbit parallel memory, 133 MHz clock and 4.2 ns access time, in a 100-TQFP (14x14) package.

The 71V67603S133BQGI from Renesas Electronics America Inc is a synchronous SDR SRAM memory Integrated Circuit with 9Mbit parallel memory, 133 MHz operation and 4.2 ns access time, in a 165-CABGA (13x15) package.

The 71V67603S133BGGI from IDT, Integrated Device Technology Inc is a synchronous SDR SRAM with 9 Mbit parallel memory, 133 MHz clock and 4.2 ns access time, in a 119-PBGA (14x22) package.

The 71V67603S150PFG from IDT, Integrated Device Technology Inc is a synchronous SDR SRAM memory Integrated Circuit with a 9 Mbit parallel interface, 150 MHz and 3.8 ns timing, in a 100-TQFP (14x14) package.

The 71V67603ZS133PF from IDT, Integrated Device Technology Inc is a synchronous SDR SRAM memory Integrated Circuit with 9 Mbit parallel storage, 133 MHz, 4.2 ns timing, in a 100-TQFP (14x14) package.

The 71V67603S133PFI from IDT, Integrated Device Technology Inc is a 9 Mbit parallel synchronous SDR SRAM Integrated Circuit running at 133 MHz with 4.2 ns timing, in a 100-TQFP (14x14) package.

The 71V67603S133PF from IDT, Integrated Device Technology Inc is a synchronous SDR SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 133 MHz clock and 4.2 ns access time, in a 100-TQFP (14x14) package.

The 71V67603S150BQI8 from Renesas Electronics America Inc is a synchronous SDR SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 150 MHz clock, 3.8 ns access time, in a 165-CABGA (13x15) package.

The 71V67603S150BQI from Renesas Electronics America Inc is a synchronous SDR SRAM Integrated Circuit with 9Mbit parallel capacity, 150 MHz clock and 3.8 ns, in a 165-CABGA (13x15) package.

The 71V67603S150BQG from Renesas Electronics America Inc is a synchronous SDR SRAM Integrated Circuit with 9 Mbit parallel capacity, 150 MHz speed and 3.8 ns timing, in a 165-CABGA (13x15) package.

The 71V67603S133BG from IDT, Integrated Device Technology Inc is a synchronous SDR SRAM with 9 Mbit parallel memory, 133 MHz clock and 4.2 ns access time, in a 119-PBGA (14x22) package.

The 71V67603S150PFGI from Renesas Electronics America Inc is a 9Mbit parallel SRAM Integrated Circuit in a 100-TQFP package.

The 71V67603S150PF from IDT, Integrated Device Technology Inc is a synchronous SDR SRAM memory Integrated Circuit with 9 Mbit parallel capacity, rated at 150 MHz and 3.8 ns, in a 100-TQFP (14x14) package.

The 71V67603S150BQG8 from Renesas Electronics America Inc is a parallel SRAM Integrated Circuit with 9 Mbit of memory, in a 165-CABGA package.

The 71V67603S166PFG from IDT, Integrated Device Technology Inc is a synchronous SDR SRAM memory Integrated Circuit with a 9 Mbit parallel interface, 166 MHz and 3.5 ns timing, in a 100-TQFP (14x14) package.

The 71V67603S150BQ from Renesas Electronics America Inc is a synchronous SDR SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 150 MHz operation and 3.8 ns access time, in a 165-CABGA (13x15) package.

The 71V67603S133BQI8 from Renesas Electronics America Inc is a synchronous SDR SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 133 MHz clock and 4.2 ns timing, in a 165-CABGA (13x15) package.

The 71V67603S133BQ from Renesas Electronics America Inc is a 9 Mbit parallel SRAM Integrated Circuit in a 165-CABGA package.

The 71V67603S133BQGI from IDT, Integrated Device Technology Inc is a synchronous SDR SRAM memory Integrated Circuit with a 9 Mbit parallel interface, 133 MHz and 4.2 ns timing, in a 165-CABGA (13x15) package.

The 71V67603ZS133PFG from IDT, Integrated Device Technology Inc is a standard SRAM memory Integrated Circuit with a 9 Mbit parallel interface, 133 MHz and 4.2 ns timing, in a 100-TQFP (14x20) package.

The 71V67603S133BQ8 from Renesas Electronics America Inc is a synchronous SDR SRAM with 9 Mbit parallel memory, 133 MHz and 4.2 ns, in a 165-CABGA (13x15) package.

The 71V67603S166BQG from IDT, Integrated Device Technology Inc is a synchronous SDR SRAM memory Integrated Circuit with a 9 Mbit parallel interface, 166 MHz and 3.5 ns timing, in a 165-CABGA (13x15) package.

The 71V67603S133BQG from Renesas Electronics America Inc is a synchronous SDR SRAM memory Integrated Circuit with a 9 Mbit parallel organization at 133 MHz and 4.2 ns, in a 165-CABGA (13x15) package.

The 71V67603S133PFG from Renesas Electronics America Inc is a synchronous SDR SRAM memory Integrated Circuit with a 9 Mbit parallel interface at 133 MHz and 4.2 ns access time, in a 100-TQFP (14x14) package.

The 71V67603S133BQI from Renesas Electronics America Inc is a 9 Mbit parallel synchronous SDR SRAM with 133 MHz and 4.2 ns timing, in a 165-CABGA (13x15) package.

The 71V67603S166BQ from Renesas Electronics America Inc is a synchronous SDR SRAM memory Integrated Circuit with 9 Mbit parallel memory, rated 166 MHz and 3.5 ns, in a 165-CABGA (13x15) package.

The 71V67603S166PF8 from IDT, Integrated Device Technology Inc is a synchronous SDR SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 166 MHz clock speed and 3.5 ns access time, in a 100-TQFP (14x14) package.

The 71V67603S133PFG8 from Renesas Electronics America Inc is a 9 Mbit parallel synchronous SDR SRAM memory Integrated Circuit with 133 MHz clock and 4.2 ns access time, in a 100-TQFP (14x14) package.

The 71V67603S150PFG8 from Renesas Electronics America Inc is a synchronous SDR parallel SRAM memory Integrated Circuit with 9Mbit capacity, 150 MHz clock and 3.8 ns access time, in a 100-TQFP (14x14) package.

The 71V67603S133PFGI8 from Renesas Electronics America Inc is a 9 Mbit parallel synchronous SDR SRAM rated to 133 MHz with 4.2 ns access, in a 100-TQFP (14x14) package.