Search results for “71v65603”

The 71V65603S150PFG from IDT, Integrated Device Technology Inc is a 9 Mbit parallel synchronous SDR (ZBT) SRAM memory Integrated Circuit rated at 150 MHz and 3.8 ns, in a 100-TQFP (14x14) package.

The 71V65603S150PFG from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9Mbit parallel capacity, 150 MHz and 3.8 ns timing, in a 100-TQFP (14x14) package.

The 71V65603ZS133PFG from IDT, Integrated Device Technology Inc is a 9 Mbit ZBT SRAM with parallel interface, 133 MHz and 4.2 ns, in a 100-TQFP (14x20) package.

The 71V65603ZS133PF from IDT, Integrated Device Technology Inc is a 9 Mbit parallel SDR (ZBT) synchronous SRAM memory Integrated Circuit rated at 133 MHz with 4.2 ns timing, in a 100-TQFP (14x14) package.

The 71V65603S100BQ from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM with 9 Mbit parallel capacity, 100 MHz clock and 5 ns access time, in a 165-CABGA (13x15) package.

The 71V65603S150PFGI from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 150 MHz speed and 3.8 ns timing, in a 100-TQFP (14x14) package.

The 71V65603S100BQGI8 from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM Integrated Circuit with 9 Mbit parallel capacity, a 100 MHz clock and 5 ns access time, in a 165-CABGA (13x15) package.

The 71V65603S133PFG from IDT, Integrated Device Technology Inc is a 9 Mbit synchronous SDR (ZBT) SRAM with parallel interface, 133 MHz and 4.2 ns, in a 100-TQFP (14x14) package.

The 71V65603S100PFGI8 from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 100 MHz clock speed and 5 ns access time, in a 100-TQFP (14x20) package.

The 71V65603S150PF from IDT, Integrated Device Technology Inc is a synchronous SDR (ZBT) SRAM Integrated Circuit with 9 Mbit parallel memory rated 150 MHz and 3.8 ns, in a 100-TQFP (14x14) package.

The 71V65603S150BQ from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM Integrated Circuit with 9 Mbit parallel, 150 MHz, 3.8 ns, in a 165-CABGA (13x15) package.

The 71V65603S100BQI from Renesas Electronics America Inc is a synchronous SRAM memory Integrated Circuit with 9 Mbit parallel capacity, in a 165-CABGA package.

The 71V65603S100PFG from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM with 9 Mbit parallel memory, rated 100 MHz with 5 ns timing, in a 100-TQFP (14x20) package.

The 71V65603S150BQG8 from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 150 MHz operation and 3.8 ns access time, in a 165-CABGA (13x15) package.

The 71V65603S100BQGI from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with a 9 Mbit parallel interface, rated at 100 MHz and 5 ns, in a 165-CABGA (13x15) package.

The 71V65603S150BQGI from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM Integrated Circuit with 9 Mbit parallel memory, 150 MHz and 3.8 ns timing, in a 165-CABGA (13x15) package.

The 71V65603S100PFG8 from Renesas Electronics America Inc is a 9 Mbit parallel SRAM memory Integrated Circuit in a 100-TQFP package.

The 71V65603S150BQGI8 from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM with 9Mbit parallel memory, 150 MHz, 3.8 ns access time, in a 165-CABGA (13x15) package.

The 71V65603S133PFG8 from Renesas Electronics America Inc is a 9 Mbit parallel synchronous SDR (ZBT) SRAM with 133 MHz and 4.2 ns timing, in a 100-TQFP (14x14) package.

The 71V65603S133BQ from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel interface, 133 MHz, 4.2 ns, in a 165-CABGA (13x15) package.

The 71V65603S133PF from IDT, Integrated Device Technology Inc is a parallel SRAM memory Integrated Circuit with 9 Mbit capacity, in a 100-TQFP package.

The 71V65603S100BGI from IDT, Integrated Device Technology Inc is a 9 Mbit synchronous SDR (ZBT) SRAM with parallel interface, 100 MHz and 5 ns, in a 119-PBGA (14x22) package.

The 71V65603S133PFI from IDT, Integrated Device Technology Inc is a synchronous SDR (ZBT) SRAM Integrated Circuit with 9 Mbit parallel memory rated 133 MHz and 4.2 ns, in a 100-TQFP (14x14) package.

The 71V65603S100PFI from IDT, Integrated Device Technology Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel interface, 100 MHz clock and 5 ns rating, in a 100-TQFP (14x14) package.

The 71V65603S133BQGI from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with a 9 Mbit parallel interface, rated 133 MHz and 4.2 ns, in a 165-CABGA (13x15) package.

The 71V65603S150BQG from IDT, Integrated Device Technology Inc is a 9 Mbit synchronous SDR (ZBT) SRAM with parallel interface, 150 MHz and 3.8 ns, in a 165-CABGA (13x15) package.

The 71V65603S133PFGI8 from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM Integrated Circuit with 9Mbit parallel memory, 133 MHz frequency and 4.2 ns access time, in a 100-TQFP (14x14) package.

The 71V65603S133BQGI8 from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 133 MHz, 4.2 ns, in a 165-CABGA (13x15) package.

The 71V65603S133BQG from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel storage, rated at 133 MHz and 4.2 ns, in a 165-CABGA (13x15) package.

The 71V65603S100BQG from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 100 MHz, 5 ns, in a 165-CABGA (13x15) package.

The 71V65603S150PFGI8 from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM Integrated Circuit with 9Mbit parallel memory, a 150 MHz clock and a 3.8 ns rating, in a 100-TQFP (14x14) package.

The 71V65603S150BQI from Renesas Electronics America Inc is an SRAM Integrated Circuit with 9 Mbit parallel memory in a 165-CABGA package.

The 71V65603S150BQI8 from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 150 MHz clock and 3.8 ns access time, in a 165-CABGA (13x15) package.

The 71V65603S133PFGI from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 133 MHz, 4.2 ns timing and a 100-TQFP (14x14) package.

The 71V65603S100PFGI from Renesas Electronics America Inc is a 9 Mbit parallel synchronous SDR (ZBT) SRAM with 100 MHz and 5 ns timing, in a 100-TQFP (14x20) package.

The 71V65603S150BQG from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 150 MHz speed and 3.8 ns, in a 165-CABGA (13x15) package.

The 71V65603S150BQ8 from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 150 MHz and 3.8 ns, in a 165-CABGA (13x15) package.

The 71V65603S150PFG8 from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM Integrated Circuit with 9 Mbit parallel memory, a 150 MHz clock and 3.8 ns timing, in a 100-TQFP (14x14) package.

The 71V65603S133PFG from Renesas Electronics America Inc is a synchronous SDR (ZBT) SRAM memory Integrated Circuit with 9 Mbit parallel capacity, 133 MHz operation and 4.2 ns access time, in a 100-TQFP (14x14) package.