The A2T20H160W04NR3 from NXP USA Inc. is a dual Radio Frequency LDMOS MOSFET operating at 28 V and 400 mA over 1.88 GHz to 2.025 GHz, with 17 dB gain and 200 W output, in an OM780-4 package.
The A2T20H330W24NR6 from NXP USA Inc. is a Radio Frequency LDMOS MOSFET operating at 28 V and 700 mA over 1.88 to 2.025 GHz, with 15.9 dB gain and 229 W output, in an OM-1230-4L2L package.