Search results for “BLF7”

The BLF7G20LS-200,118 from Ampleon USA Inc. is a Radio Frequency LDMOS MOSFET rated 28 V and 1.62 A, covering 1.81 to 1.88 GHz with 18 dB gain and 55 W output, in a SOT502B package.

The BLF7G20LS-90P,112 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V, 550 mA, operating from 1.81 GHz to 1.88 GHz with 19.5 dB gain and 40 W output, in an LDMOST package.

The BLF7G22LS-200,118 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET rated 28 V and 1.62 A for 2.11 to 2.17 GHz, with 18.5 dB gain and 55 W output, in an SOT502B package.

The BLF7G22LS-250P,118 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V and 1.9 A, covering 2.11 to 2.17 GHz with 18.5 dB gain and 70 W output, in a SOT539B package.

The BLF7G27LS-100,118 from Ampleon USA Inc. is a Radio Frequency LDMOS FET MOSFET rated 28 V, 900 mA, 2.5 GHz to 2.7 GHz, 18 dB and 20 W, in a SOT502B package.

The BLF7G22LS-250P,112 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V and 1.9 A, covering 2.11 to 2.17 GHz with 18.5 dB gain and 70 W output, in a SOT539B package.

The BLF7G24LS-100,118 from Ampleon USA Inc. is an LDMOS Radio Frequency FET rated 28 V, 900 mA, 2.3 to 2.4 GHz, 18 dB and 20 W, in a SOT502B package, with a 65 V designation.

The BLF7G10LS-250,118 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 30 V and 1.8 A, covering 920 to 960 MHz with 19.5 dB gain and 60 W output, in a SOT502B package.

The BLF7G24LS-140,118 from NXP USA Inc. is an N-channel MOSFET.

The BLF7G22LS-200,112 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET rated 28 V and 1.62 A for 2.11 to 2.17 GHz, with 18.5 dB gain and 55 W output, in an SOT502B package.

The BLF7G24LS-140,118 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V, 1.3 A, operating from 2.3 GHz to 2.4 GHz with 18.5 dB gain and 30 W output, in a SOT502B package.

The BLF7G20LS-200,112 from Ampleon USA Inc. is a Radio Frequency LDMOS MOSFET rated 28 V and 1.62 A, covering 1.81 to 1.88 GHz with 18 dB gain and 55 W output, in a SOT502B package.

The BLF7G24LS-100,112 from Ampleon USA Inc. is an LDMOS Radio Frequency FET rated 28 V, 900 mA, 2.3 to 2.4 GHz, 18 dB and 20 W, in a SOT502B package, with a 65 V designation.

The BLF7G27LS-150P,118 from Ampleon USA Inc. is a Radio Frequency LDMOS MOSFET rated 28 V and 1.2 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT539B package.

The BLF7G27LS-100,112 from Ampleon USA Inc. is a Radio Frequency LDMOS FET MOSFET rated 28 V, 900 mA, 2.5 GHz to 2.7 GHz, 18 dB and 20 W, in a SOT502B package.

The BLF7G24LS-140,112 from Ampleon USA Inc. is a Radio Frequency MOSFET (LDMOS) rated 28 V and 1.3 A, operating from 2.3 GHz to 2.4 GHz with 18.5 dB gain and 30 W output, in a SOT502B package.

The BLF7G10LS-250,112 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 30 V and 1.8 A, covering 920 to 960 MHz with 19.5 dB gain and 60 W output, in a SOT502B package.

The BLF7G20LS-250P,118 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET transistor rated 28 V and 1.9 A, operating from 1.81 GHz to 1.88 GHz with 18 dB gain and 70 W output, in a SOT539B package.

The BLF7G22LS-250P,112 from NXP USA Inc. is an N-channel MOSFET.

The BLF7G27L-100,112 from NXP USA Inc. is a Radio Frequency MOSFET rated 28 V and 900 mA, operating from 2.5 GHz to 2.7 GHz with 18 dB gain and 20 W output power, in a SOT502A package.

The BLF7G10L-250,112 from NXP USA Inc. is a single-element Radio Frequency P-channel FET for ultra-high frequency use.

The BLF7G10LS-250,112 from NXP USA Inc. is a Radio Frequency MOSFET rated 30 V and 1.8 A, operating at 869 to 960 MHz with 19.5 dB gain and 250 W power, in a SOT502B package.

The BLF7G27L-150P,112 from NXP USA Inc. is a Radio Frequency power MOSFET rated 28 V and 1.2 A, covering 2.5 to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT539A package.

The BLF7G22L-130112 from NXP USA Inc. is a Radio Frequency power bipolar junction transistor (BJT).

The BLF7G27L-150P,112 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET transistor rated 28 V and 1.2 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT539A package.

The BLF7G20LS-250P,112 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET transistor rated 28 V and 1.9 A, operating from 1.81 GHz to 1.88 GHz with 18 dB gain and 70 W output, in a SOT539B package.

The BLF7G20L-90P,112 from Ampleon USA Inc. is a Radio Frequency LDMOS MOSFET rated 28 V with 550 mA, covering 1.81 GHz to 1.88 GHz with 19.5 dB gain and 40 W output, in an LDMOST package.

The BLF7G24L-100,112 from NXP USA Inc. is a Radio Frequency MOSFET rated 28 V and 900 mA, operating from 2.3 GHz to 2.4 GHz with 18 dB gain and 20 W output power, in a SOT502A package.

The BLF7G20LS-140P,112 from Ampleon USA Inc. is a Radio Frequency LDMOS MOSFET rated 28 V with 850 mA, covering 1.81 GHz to 1.88 GHz with 17.5 dB gain and 60 W output, in an LDMOST package.

The BLF7G27L-135,112 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V and 1.3 A, operating from 2.6 GHz to 2.7 GHz with 16.5 dB gain and 25 W output, in a SOT502A package.

The BLF7G10L-250,112 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 30 V, 1.8 A, operating from 920 MHz to 960 MHz with 19.5 dB gain and 60 W output, in a SOT502A package.

The BLF7G27L-90P,118 from Ampleon USA Inc. is a Radio Frequency LDMOS MOSFET rated 28 V and 720 mA, covering 2.5 to 2.7 GHz with 18.5 dB gain and 16 W output, in a LDMOST package.

The BLF7G27LS-140,112 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V, 1.3 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT502B package.

The BLF7G24L-160P,112 from NXP USA Inc. is a Radio Frequency MOSFET transistor.

The BLF7G20L-90P112 from Ampleon USA Inc. is an LDMOS Radio Frequency power transistor rated 28 V and 550 mA, operating from 2.11 GHz to 2.17 GHz with 19.5 dB gain and 90 W output power, in an LDMOST package.

The BLF7G22LS-160,112 from Ampleon USA Inc. is a Radio Frequency FET LDMOS rated 65 V with 18 dB, in a SOT502B package.

The BLF7G27LS-140,118 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V, 1.3 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT502B package.

The BLF7G21LS-160P,118 from Ampleon USA Inc. is a Radio Frequency LDMOS MOSFET rated 28 V and 1.08 A, covering 1.93 to 1.99 GHz with 18 dB gain and 45 W output, in a LDMOST package.

The BLF7G22LS-130,118 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V, 950 mA, operating from 2.11 GHz to 2.17 GHz with 18.5 dB gain and 30 W output, in a SOT502B package.

The BLF7G21LS-160,112 from Ampleon USA Inc. is a Radio Frequency amplifier Integrated Circuit for W-CDMA operation from 1.8 GHz to 2.05 GHz, supplied in a SOT1121B package.