Search results for “BLF7G27”
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BLF7G27LS-140,112
NXP USA Inc.The BLF7G27LS-140,112 from NXP USA Inc. is a single-element P-channel S-band silicon Radio Frequency MOSFET rated 28 V, 1.3 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT502B package.
View full detailsBLF7G27LS-90P,112
NXP USA Inc.The BLF7G27LS-90P,112 from NXP USA Inc. is a 2-element S-band silicon Radio Frequency MOSFET rated 28 V and 720 mA, operating at 2.5 to 2.7 GHz with 18.5 dB gain and 16 W output, in an LDMOST package.
View full detailsBLF7G27L-135,112
Ampleon USA Inc.The BLF7G27L-135,112 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V and 1.3 A, operating from 2.6 GHz to 2.7 GHz with 16.5 dB gain and 25 W output, in a SOT502A package.
View full detailsBLF7G27LS-140,112
Ampleon USA Inc.The BLF7G27LS-140,112 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V, 1.3 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT502B package.
View full detailsBLF7G27LS-140,118
Ampleon USA Inc.The BLF7G27LS-140,118 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V, 1.3 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT502B package.
View full detailsBLF7G27L-150P,112
Ampleon USA Inc.The BLF7G27L-150P,112 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET transistor rated 28 V and 1.2 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT539A package.
View full detailsBLF7G27LS-75P,118
Ampleon USA Inc.The BLF7G27LS-75P,118 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET rated 28 V and 650 mA for 2.3 to 2.4 GHz, with 17 dB gain and 12 W output, in an LDMOST package.
View full detailsBLF7G27LS-90P,112
Ampleon USA Inc.The BLF7G27LS-90P,112 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET transistor rated 28 V and 720 mA, operating from 2.5 GHz to 2.7 GHz with 18.5 dB gain and 16 W output, in an LDMOST package.
View full detailsBLF7G27LS-90P,118
Ampleon USA Inc.The BLF7G27LS-90P,118 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET transistor rated 28 V and 720 mA, operating from 2.5 GHz to 2.7 GHz with 18.5 dB gain and 16 W output, in an LDMOST package.
View full detailsBLF7G27L-90P,118
Ampleon USA Inc.The BLF7G27L-90P,118 from Ampleon USA Inc. is a Radio Frequency LDMOS MOSFET rated 28 V and 720 mA, covering 2.5 to 2.7 GHz with 18.5 dB gain and 16 W output, in a LDMOST package.
View full detailsBLF7G27L-150P,118
Ampleon USA Inc.The BLF7G27L-150P,118 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET transistor rated 28 V and 1.2 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT539A package.
View full detailsBLF7G27L-135,118
Ampleon USA Inc.The BLF7G27L-135,118 from Ampleon USA Inc. is an LDMOS Radio Frequency power transistor in a SOT502A package.
View full detailsBLF7G27L-100,112
Ampleon USA Inc.The BLF7G27L-100,112 from Ampleon USA Inc. is an LDMOS Radio Frequency FET rated 28 V, 900 mA, 2.5 to 2.7 GHz, 18 dB and 20 W, in a SOT502A package, with a 65 V designation.
View full detailsBLF7G27L-100,118
Ampleon USA Inc.The BLF7G27L-100,118 from Ampleon USA Inc. is an LDMOS Radio Frequency FET rated 28 V, 900 mA, 2.5 to 2.7 GHz, 18 dB and 20 W, in a SOT502A package, with a 65 V designation.
View full detailsBLF7G27LS-150P,112
Ampleon USA Inc.The BLF7G27LS-150P,112 from Ampleon USA Inc. is a Radio Frequency LDMOS MOSFET rated 28 V and 1.2 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT539B package.
View full detailsBLF7G27L-75P,112
Ampleon USA Inc.The BLF7G27L-75P,112 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET rated 28 V and 650 mA for 2.3 to 2.4 GHz, with 17 dB gain and 12 W output, in an LDMOST package.
View full detailsBLF7G27LS-75P,112
Ampleon USA Inc.The BLF7G27LS-75P,112 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET rated 28 V and 650 mA for 2.3 to 2.4 GHz, with 17 dB gain and 12 W output, in an LDMOST package.
View full detailsBLF7G27L-140,112
Ampleon USA Inc.The BLF7G27L-140,112 from Ampleon USA Inc. is a Radio Frequency LDMOS FET MOSFET rated 28 V and 1.3 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT502A package.
View full detailsBLF7G27L-75P,118
Ampleon USA Inc.The BLF7G27L-75P,118 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET rated 28 V and 650 mA for 2.3 to 2.4 GHz, with 17 dB gain and 12 W output, in an LDMOST package.
View full detailsBLF7G27L-140,118
Ampleon USA Inc.The BLF7G27L-140,118 from Ampleon USA Inc. is a Radio Frequency LDMOS FET MOSFET rated 28 V and 1.3 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT502A package.
View full detailsBLF7G27L-90P,112
Ampleon USA Inc.The BLF7G27L-90P,112 from Ampleon USA Inc. is a Radio Frequency LDMOS MOSFET rated 28 V and 720 mA, covering 2.5 to 2.7 GHz with 18.5 dB gain and 16 W output, in a LDMOST package.
View full detailsBLF7G27L-150P,112
NXP USA Inc.The BLF7G27L-150P,112 from NXP USA Inc. is a Radio Frequency power MOSFET rated 28 V and 1.2 A, covering 2.5 to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT539A package.
View full detailsBLF7G27L-100,112
NXP USA Inc.The BLF7G27L-100,112 from NXP USA Inc. is a Radio Frequency MOSFET rated 28 V and 900 mA, operating from 2.5 GHz to 2.7 GHz with 18 dB gain and 20 W output power, in a SOT502A package.
View full detailsBLF7G27LS-150P,118
Ampleon USA Inc.The BLF7G27LS-150P,118 from Ampleon USA Inc. is a Radio Frequency LDMOS MOSFET rated 28 V and 1.2 A, operating from 2.5 GHz to 2.7 GHz with 16.5 dB gain and 30 W output, in a SOT539B package.
View full detailsBLF7G27L-200PB,118
Ampleon USA Inc.The BLF7G27L-200PB,118 from Ampleon USA Inc. is a Radio Frequency amplifier Integrated Circuit for W-CDMA operation from 2.6 GHz to 2.7 GHz, supplied in a SOT1110A package.
View full detailsBLF7G27LS-100,112
Ampleon USA Inc.The BLF7G27LS-100,112 from Ampleon USA Inc. is a Radio Frequency LDMOS FET MOSFET rated 28 V, 900 mA, 2.5 GHz to 2.7 GHz, 18 dB and 20 W, in a SOT502B package.
View full detailsBLF7G27LS-100,118
Ampleon USA Inc.The BLF7G27LS-100,118 from Ampleon USA Inc. is a Radio Frequency LDMOS FET MOSFET rated 28 V, 900 mA, 2.5 GHz to 2.7 GHz, 18 dB and 20 W, in a SOT502B package.
View full detailsBLF7G27L-200PB,112
Ampleon USA Inc.The BLF7G27L-200PB,112 from Ampleon USA Inc. is a Radio Frequency amplifier Integrated Circuit for W-CDMA operation from 2.6 GHz to 2.7 GHz, supplied in a SOT1110A package.
View full details