Search results for “CoolMOS™ G7”

The IPL65R200CFD7AUMA1 from Infineon Technologies is a CoolMOS CFD7 superjunction N-channel 650 V, 14 A (Tc) MOSFET rated 81 W (Tc), in a surface-mount PG-VSON-4 package.

The IPT60R050G7XTMA1 from Infineon Technologies is an N-channel MOSFET transistor rated 600 V and 44 A in an 8HSOF package.

The IPT60R028G7XTMA1 from Infineon Technologies is a N-channel MOSFET rated 600 V and 75 A (Tc) with 391 W (Tc) power dissipation, in a surface-mount PG-HSOF-8-2 package.

The IPT60R125G7XTMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 20 A (Tc) with 120 W (Tc) power dissipation, in a surface-mount PG-HSOF-8-2 package.

The IPT60R102G7XTMA1 from Infineon Technologies is an N-channel MOSFET transistor rated 600 V and 23 A, in an 8HSOF package.

The IPDD60R150G7XTMA1 from Infineon Technologies is a 600 V N-channel MOSFET rated 16 A (Tc) with 95 W (Tc) power dissipation, in a surface-mount PG-HDSOP-10-1 package.

The IPT60R080G7XTMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 29 A (Tc) at 167 W (Tc), in a surface-mount PG-HSOF-8-2 package.

The IPL65R130CFD7AUMA1 from Infineon Technologies is an N-channel superjunction MOSFET rated 650 V and 21 A (Tc) with 127 W (Tc) power dissipation, in a surface-mount PG-VSON-4 package.

The IPL65R095CFD7AUMA1 from Infineon Technologies is a CoolMOS CFD7 superjunction MOSFET.

The IPW65R018CFD7XKSA1 from Infineon Technologies is an N-channel 650 V, 106 A (Tc) CoolMOS CFD7 superjunction MOSFET rated 446 W (Tc), in a through-hole PG-TO247-3 package.

The IPT60R150G7XTMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 17 A (Tc), dissipating 106 W (Tc), in a surface-mount PG-HSOF-8-2 package.

The IPDD60R080G7XTMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 29 A (Tc) with 174 W (Tc) power dissipation, in a surface-mount PG-HDSOP-10-1 package.

The IPL60R060CFD7AUMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 40 A (Tc) with 219 W (Tc) power dissipation, in a surface-mount PG-VSON-4 package.

The IPDD60R125G7XTMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 20 A (Tc) with 120 W (Tc) power dissipation, in a surface-mount PG-HDSOP-10-1 package.

The IPDD60R050G7XTMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 47 A (Tc) with 278 W (Tc) power dissipation, in a surface-mount PG-HDSOP-10-1 package.

The IPL60R160CFD7AUMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 16 A (Tc) with 95 W (Tc) power dissipation, in a surface-mount PG-VSON-4 package.

The IPL65R160CFD7AUMA1 from Infineon Technologies is an N-channel superjunction MOSFET rated 650 V and 17 A (Tc) with 98 W (Tc) power dissipation, in a surface-mount PG-VSON-4 package.

The IPW65R029CFD7XKSA1 from Infineon Technologies is an N-channel MOSFET rated 650 V and 69 A (Tc), with 305 W (Tc) power dissipation, in a through-hole PG-TO247-3 package.

The IPDD60R190G7XTMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 13 A (Tc) with 76 W (Tc) power dissipation, in a surface-mount PG-HDSOP-10-1 package.

The IPP65R190C7 from Infineon Technologies is an N-channel COOLMOS MOSFET rated 650 V and 13 A (Tc) at 72 W (Tc), in a through-hole PG-TO220-3-1 package.

The IPW65R230CFD7AXKSA1 from Infineon Technologies is an N-channel 650 V, 11 A (Tc) CoolMOS power MOSFET rated 63 W (Tc), in a through-hole PG-TO247-3 package.

The IPDQ60R022S7XTMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 24 A (Tc) with 416 W (Tc) power dissipation, in a surface-mount PG-HDSOP-22-1 package.

The IPL65R115CFD7AUMA1 from Infineon Technologies is a CoolMOS CFD7 superjunction N-channel MOSFET rated 650 V and 24 A (Tc), with 144 W (Tc) power dissipation, in a surface-mount PG-VSON-4 package.

The IPP65R060CFD7XKSA1 from Infineon Technologies is a CoolMOS N-channel MOSFET rated 650 V and 36 A (Tc) with 171 W (Tc) power dissipation, in a through-hole PG-TO220-3-1 package.

The IPB65R050CFD7AATMA1 from Infineon Technologies is an automotive-grade N-channel CoolMOS MOSFET rated 650 V and 45 A (Tc) with 227 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

IPN60R1K0PFD7SATMA1 from Infineon Technologies is a CONSUMER PG-SOT223-3

The IPU80R750P7AKMA1-ND from Infineon Technologies is a CoolMOS N-channel power MOSFET rated 800 V and 7 A (Tj), with 51 W (Tc) power dissipation, in a through-hole PG-TO-251-3-341 package.

IPN60R600PFD7SATMA1 from Infineon Technologies is a CONSUMER PG-SOT223-3

The IPA60R280CFDD7 from Infineon Technologies is an N-channel CoolMOS MOSFET rated 600 V, 6 A (Tc) and 24 W (Tc), for through-hole mounting in a PG-TO220 Full Pack package.

The SS07N70AKMA1046 from Infineon Technologies is a CoolMOS specialized Integrated Circuit rated 650 V and 700 V.

The IPU95R1K2P7AKMA1 from Infineon Technologies is an N-channel MOSFET rated 950 V and 6 A (Tc) with 52 W (Tc) power dissipation, in a through-hole PG-TO251-3 package.

The IPB65R115CFD7AATMA1 from Infineon Technologies is an automotive-grade N-channel CoolMOS MOSFET rated 650 V and 21 A (Tc), with 114 W (Tc), in a surface-mount PG-TO263-3 package.

The IPA65R225C7 from Infineon Technologies is an N-channel CoolMOS MOSFET rated 650 V, 7 A (Tc) and 29 W (Tc), for through-hole mounting in a PG-TO220-3-111 package.

The IPD60R380E6BTMA1 from International Rectifier is a CoolMOS N-channel power MOSFET rated 600 V and 10.6 A (Tc) with 83 W (Tc) power dissipation, in a surface-mount PG-TO252-3 package.

The IPP60R065S7XKSA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 8 A (Tc) with 167 W (Tc) power dissipation, in a through-hole PG-TO220-3-1 package.

The SPD08N50C3 from Infineon Technologies is a CoolMOS N-channel MOSFET rated 500 V and 7.6 A (Tc) with 83 W (Tc) power dissipation, in a surface-mount PG-TO252-3-313 package.

The IPP50R350CP from Infineon Technologies is an N-channel CoolMOS rated 500 V and 10 A (Tc) with 89 W (Tc) power dissipation, in a through-hole PG-TO220-3-1 package.

The SPD07N60S5BTMA1 from Infineon Technologies is an N-channel power MOSFET rated 600 V and 7.3 A (Tc) with 83 W power dissipation, in a surface-mount PG-TO252 package.

The ICE5AR4780BZSXKLA1 from Infineon Technologies is an offline flyback switch Integrated Circuit for flyback converter topology operating at 100 kHz, in a PG-DIP-7 package.