Search results for “CoolMOS™PFD7”

IPN60R600PFD7SATMA1 from Infineon Technologies is a CONSUMER PG-SOT223-3

IPN60R1K0PFD7SATMA1 from Infineon Technologies is a CONSUMER PG-SOT223-3

The IPLK60R600PFD7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 7 A (Tc), with 45 W (Tc) power dissipation, in a surface-mount PG-TDSON-8-52 package.

The IPD60R360PFD7SAUMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 10 A (Tc) with 43 W (Tc) power dissipation, in a surface-mount PG-TO252-3-344 package.

The IPL65R095CFD7AUMA1 from Infineon Technologies is a CoolMOS CFD7 superjunction MOSFET.

The IPD60R280PFD7SAUMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 12 A (Tc) with 51 W (Tc) power dissipation, in a surface-mount PG-TO252-3-344 package.

The IPLK60R360PFD7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 13 A (Tc), with 74 W (Tc) power dissipation, in a surface-mount PG-TDSON-8-52 package.

The IPS60R600PFD7SAKMA1 from Infineon Technologies is a 650 V, 6 A (Tc) N-channel MOSFET rated 31 W (Tc), in a through-hole PG-TO251-3 package.

The IPD60R2K0PFD7SAUMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 3 A (Tc) with 20 W (Tc) power dissipation, in a surface-mount PG-TO252-3-344 package.

The IPD60R210PFD7SAUMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 16 A, in a TO252-3 package.

The IPL65R200CFD7AUMA1 from Infineon Technologies is a CoolMOS CFD7 superjunction N-channel 650 V, 14 A (Tc) MOSFET rated 81 W (Tc), in a surface-mount PG-VSON-4 package.

The IPD60R1K5PFD7SAUMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 3.6 A (Tc) with 22 W (Tc) power dissipation, in a surface-mount PG-TO252-3-344 package.

The IPLK60R1K5PFD7ATMA1 from Infineon Technologies is an N-channel 600 V, 3.8 A (Tc) MOSFET rated 25 W (Tc), in a surface-mount PG-TDSON-8-52 package.

The IPN60R360PFD7SATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 10 A (Tc) with 7 W (Tc) power dissipation, in a surface-mount PG-SOT223-3-1 package.

The IPAN60R125PFD7SXKSA1 from Infineon Technologies is an N-channel MOSFET rated 650 V and 25 A (Tc) with 32 W (Tc) power dissipation, in a through-hole PG-TO220-FP package.

The IPS60R1K0PFD7SAKMA1 from Infineon Technologies is a 650 V, 4.7 A (Tc) N-channel MOSFET rated 26 W (Tc), in a through-hole PG-TO251-3 package.

The IPL60R060CFD7AUMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 40 A (Tc) with 219 W (Tc) power dissipation, in a surface-mount PG-VSON-4 package.

The IPL60R160CFD7AUMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 16 A (Tc) with 95 W (Tc) power dissipation, in a surface-mount PG-VSON-4 package.

The IPAN60R360PFD7SXKSA1 from Infineon Technologies is an N-channel MOSFET rated 650 V and 10 A (Tc) with 23 W (Tc) power dissipation, in a through-hole PG-TO220-FP package.

The IPN60R2K0PFD7SATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 3 A (Tc) with 6 W (Tc) power dissipation, in a surface-mount PG-SOT223-3-1 package.

The IPW65R018CFD7XKSA1 from Infineon Technologies is an N-channel 650 V, 106 A (Tc) CoolMOS CFD7 superjunction MOSFET rated 446 W (Tc), in a through-hole PG-TO247-3 package.

The IPS60R360PFD7SAKMA1 from Infineon Technologies is an N-channel MOSFET rated 650 V and 10 A in a TO-251-3 package.

The IPS60R210PFD7SAKMA1 from Infineon Technologies is an N-channel MOSFET rated 650 V and 16 A (Tc) with 64 W (Tc) power dissipation, in a through-hole PG-TO251-3 package.

The IPL65R160CFD7AUMA1 from Infineon Technologies is an N-channel superjunction MOSFET rated 650 V and 17 A (Tc) with 98 W (Tc) power dissipation, in a surface-mount PG-VSON-4 package.

The IPAN60R210PFD7SXKSA1 from Infineon Technologies is an N-channel MOSFET rated 650 V and 16 A (Tc) with 25 W (Tc) power dissipation, in a through-hole PG-TO220-FP package.

The IPL65R115CFD7AUMA1 from Infineon Technologies is a CoolMOS CFD7 superjunction N-channel MOSFET rated 650 V and 24 A (Tc), with 144 W (Tc) power dissipation, in a surface-mount PG-VSON-4 package.

The IPL65R130CFD7AUMA1 from Infineon Technologies is an N-channel superjunction MOSFET rated 650 V and 21 A (Tc) with 127 W (Tc) power dissipation, in a surface-mount PG-VSON-4 package.

The IPW65R029CFD7XKSA1 from Infineon Technologies is an N-channel MOSFET rated 650 V and 69 A (Tc), with 305 W (Tc) power dissipation, in a through-hole PG-TO247-3 package.

The IPW65R230CFD7AXKSA1 from Infineon Technologies is an N-channel 650 V, 11 A (Tc) CoolMOS power MOSFET rated 63 W (Tc), in a through-hole PG-TO247-3 package.

The IPA60R280CFDD7 from Infineon Technologies is an N-channel CoolMOS MOSFET rated 600 V, 6 A (Tc) and 24 W (Tc), for through-hole mounting in a PG-TO220 Full Pack package.

The IPB65R050CFD7AATMA1 from Infineon Technologies is an automotive-grade N-channel CoolMOS MOSFET rated 650 V and 45 A (Tc) with 227 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPP65R190C7 from Infineon Technologies is an N-channel COOLMOS MOSFET rated 650 V and 13 A (Tc) at 72 W (Tc), in a through-hole PG-TO220-3-1 package.

The IPP65R060CFD7XKSA1 from Infineon Technologies is a CoolMOS N-channel MOSFET rated 650 V and 36 A (Tc) with 171 W (Tc) power dissipation, in a through-hole PG-TO220-3-1 package.

The IPU80R750P7AKMA1-ND from Infineon Technologies is a CoolMOS N-channel power MOSFET rated 800 V and 7 A (Tj), with 51 W (Tc) power dissipation, in a through-hole PG-TO-251-3-341 package.

The IPN60R1K5PFD7SATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 3.6 A (Tc) with 6 W (Tc) power dissipation, in a surface-mount PG-SOT223-3 package.

The IPDQ60R022S7XTMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 24 A (Tc) with 416 W (Tc) power dissipation, in a surface-mount PG-HDSOP-22-1 package.

The SS07N70AKMA1046 from Infineon Technologies is a CoolMOS specialized Integrated Circuit rated 650 V and 700 V.

The IPB65R115CFD7AATMA1 from Infineon Technologies is an automotive-grade N-channel CoolMOS MOSFET rated 650 V and 21 A (Tc), with 114 W (Tc), in a surface-mount PG-TO263-3 package.

The IPW65R060CFD7XKSA1 from Infineon Technologies is an N-channel MOSFET rated 650 V and 36 A (Tc), with 171 W (Tc) power dissipation, in a through-hole PG-TO247-3 package.

The IPU95R1K2P7AKMA1 from Infineon Technologies is an N-channel MOSFET rated 950 V and 6 A (Tc) with 52 W (Tc) power dissipation, in a through-hole PG-TO251-3 package.

The IPA65R225C7 from Infineon Technologies is an N-channel CoolMOS MOSFET rated 650 V, 7 A (Tc) and 29 W (Tc), for through-hole mounting in a PG-TO220-3-111 package.

The IPP65R041CFD7XKSA1 from Infineon Technologies is a CoolMOS N-channel MOSFET rated 650 V and 50 A (Tc) with 227 W (Tc) power dissipation, in a through-hole PG-TO220-3-1 package.

The IPA65R190C7 from Infineon Technologies is an N-channel MOSFET rated 650 V and 8 A (Tc) with 30 W (Tc) power dissipation, in a through-hole PG-TO220 Full Pack package.