Search results for “DRV8300”

DRV8300DPWRQ1 from Texas Instruments is a AUTOMOTIVE 100-V MAX SIMPLE 3-PH

DRV8300NPWR from Texas Instruments is a 100-V MAX SIMPLE 3-PHASE GATE DR

DRV8300DRGER from Texas Instruments is a 100-V MAX SIMPLE 3-PHASE GATE DR

DRV8300NRGER from Texas Instruments is a 100-V MAX SIMPLE 3-PHASE GATE DR

DRV8300UDPWR from Texas Instruments is a 100-V MAX SIMPLE THREE-PHASE GAT

DRV8300DPWR from Texas Instruments is a 100-V MAX SIMPLE 3-PHASE GATE DR

DRV8300DIPWR from Texas Instruments is a 100-V MAX SIMPLE 3-PHASE GATE DR

DRV8300NIPWR from Texas Instruments is a 100-V MAX SIMPLE 3-PHASE GATE DR

DRV8300UDIPWR from Texas Instruments is a 100-V max, simple three-phase gate driver with bootstrap diodes and enhanced UVLO protection - BLDC drivers. DRV8300U is 100V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents. The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

DRV8300UDRGER from Texas Instruments is a 100-V max, simple three-phase gate driver with bootstrap diodes and enhanced UVLO protection - BLDC drivers. DRV8300U is 100V three half-bridge gate drivers, capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300UD generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750mA source and 1.5A sink currents. The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (125V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.