The IGT60R070D1ATMA1 from Infineon Technologies is a GANFET N-channel transistor rated 600 V and 31 A in an 8HSOF package.
The IGT60R070D1ATMA4 from Infineon Technologies is a GaN N-channel FET rated 600 V and 31 A (Tc) with 125 W (Tc) power dissipation, in a surface-mount PG-HSOF-8-3 package.
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