Search results for “IMZA65”

The IMZA65R107M1HXKSA1 from Infineon Technologies is a 650 V, 20 A (Tc) N-channel SiC trench MOSFET rated 75 W (Tc), in a through-hole PG-TO247-3-41 package.

The IMZA65R048M1HXKSA1 from Infineon Technologies is a SiC trench N-channel MOSFET rated 650 V and 39 A (Tc) with 125 W (Tc) power dissipation, in a through-hole PG-TO247-4-3 package.

The IMZA65R027M1HXKSA1 from Infineon Technologies is a SiC trench N-channel MOSFET rated 650 V and 59 A (Tc) with 189 W (Tc) power dissipation, in a through-hole PG-TO247-4-3 package.

The IMZA65R072M1HXKSA1 from Infineon Technologies is a SiC trench N-channel MOSFET rated 650 V and 28 A (Tc) with 96 W (Tc) power dissipation, in a through-hole PG-TO247-4-3 package.

The IMZA65R039M1HXKSA1 from Infineon Technologies is a silicon carbide N-channel MOSFET rated 650 V and 50 A (Tc) with 176 W (Tc) power dissipation, in a through-hole PG-TO247-4-3 package.

The IMZA65R057M1HXKSA1 from Infineon Technologies is an N-channel silicon carbide MOSFET rated 650 V and 35 A (Tc), with 133 W (Tc) power dissipation, in a through-hole PG-TO247-4-3 package.

The IMZA65R030M1HXKSA1 from Infineon Technologies is a silicon carbide N-channel MOSFET rated 650 V and 53 A (Tc) with 197 W (Tc) power dissipation, in a through-hole PG-TO247-4-3 package.

The IMZA65R083M1HXKSA1 from Infineon Technologies is a silicon carbide MOSFET in a PG-TO247 package.