Search results for “IPB60R”

The IPB60R250CPATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 12 A (Tc) with 104 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R600C6ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 7.3 A (Tc) with 63 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R600P6ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 7.3 A (Tc) with 63 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R330P6ATMA1 from Infineon Technologies is an N-channel MOSFET transistor rated 600 V and 12 A, in a D2PAK package.

The IPB60R600CPATMA1 from Infineon Technologies is a 600 V N-channel MOSFET rated 6.1 A (Tc) with 60 W (Tc) power dissipation, in a surface-mount PG-TO263-3 (D2PAK) package.

The IPB60R380P6ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 10.6 A, in a D2PAK package.

The IPB60R230P6ATMA1 from Infineon Technologies is a 600 V, 16.8 A N-channel MOSFET transistor in a TO263-3 package.

The IPB60R520CPATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 6.8 A (Tc) with 66 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R950C6ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 4.4 A (Tc) with 37 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R190P6ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 20.2 A (Tc) with 151 W (Tc) power dissipation, in a PG-TO263-3 surface-mount package.

The IPB60R299CPATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 11 A (Tc) with 96 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R385CPATMA1 from Infineon Technologies is an N-channel MOSFET transistor rated 600 V and 9 A, in a TO263-3 package.

The IPB60R120P7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 26 A (Tc) with a 95 W (Tc) power rating, in a surface-mount PG-TO263-3 package.

The IPB60R360CFD7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 7 A (Tc) with 43 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R199CPAATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 16 A (Tc) with 139 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R360P7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 9 A (Tc) with 41 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R299CPAATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 11 A (Tc) with 96 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R125CFD7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 18 A (Tc) with 92 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R125C6ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 30 A (Tc) with 219 W (Tc) power dissipation, in a surface-mount PG-TO263-3 (D2PAK) package.

The IPB60R280CFD7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 9 A (Tc) with 51 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R520CP from Infineon Technologies is an N-channel power MOSFET rated 600 V and 6.8 A (Tc), with 66 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R160P6ATMA1 from Infineon Technologies is an N-channel MOSFET transistor rated 600 V and 23.8 A, in a D2PAK package.

The IPB60R280P6ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 13.8 A in a D2PAK package.

The IPB60R299CP from Infineon Technologies is an N-channel power MOSFET rated 600 V and 11 A (Tc) with 96 W (Tc), in a surface-mount PG-TO263-3-2 package.

The IPB60R045P7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 61 A (Tc) with 201 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R040CFD7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 50 A (Tc) with 227 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R040C7ATMA1 from Infineon Technologies is a 600 V N-channel MOSFET rated 50 A (Tc) with 227 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R060P7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 48 A (Tc), dissipating 164 W (Tc), in a surface-mount PG-TO263-3 package.

The IPB60R070CFD7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 31 A (Tc), dissipating 156 W (Tc), in a surface-mount PG-TO263-3-2 package.

The IPB60R170CFD7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 14 A (Tc) with 75 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R080P7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 37 A (Tc) with 129 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R280C6ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 13.8 A (Tc) with 104 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R090CFD7ATMA1 from Infineon Technologies is a 600 V, 25 A (Tc) N-channel MOSFET rated 124 W (Tc), in a surface-mount PG-TO263-3-2 package.

The IPB60R280P7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 12 A (Tc) with 53 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R099CPATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 31 A (Tc) with 255 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R160C6ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 23.8 A (Tc) at 176 W (Tc), in a PG-TO263-3 surface-mount package.

The IPB60R099C6ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 37.9 A (Tc) with 278 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R125CPATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 25 A (Tc) with 208 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R380C6ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 10.6 A (Tc), with 83 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R165CPATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 21 A (Tc) with 192 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R060C7ATMA1 from Infineon Technologies is an N-channel MOSFET transistor rated 600 V and 35 A, in a TO263-3 package.

The IPB60R099CPAATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 31 A in a TO263-3 package.

The IPB60R055CFD7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 38 A (Tc) with 178 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R210CFD7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 12 A (Tc) with 64 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The IPB60R120C7ATMA1 from Infineon Technologies is an N-channel MOSFET transistor rated 600 V and 19 A, in a TO263-3 package.

The IPB60R099P7ATMA1 from Infineon Technologies is a 600 V N-channel MOSFET rated 31 A (Tc) with 117 W (Tc) power dissipation, in a surface-mount PG-TO263-3 package.

The IPB60R099C7ATMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 22 A (Tc) at 110 W (Tc), in a surface-mount PG-TO263-3-2 package.