Search results for “IS64WV51216”

The IS64WV51216BLL-10MLA3 from ISSI, Integrated Silicon Solution Inc is an asynchronous SRAM memory Integrated Circuit with 8 Mbit parallel capacity and 10 ns access time, in a 48-miniBGA (9x11) package.

The IS64WV51216EDBLL-10BLA3 from ISSI, Integrated Silicon Solution Inc is an asynchronous SRAM memory Integrated Circuit with an 8 Mbit parallel interface and 10 ns access time, in a 48-TFBGA (6x8) package.

The IS64WV51216EDBLL-10BLA3-TR from ISSI, Integrated Silicon Solution Inc is an asynchronous SRAM memory Integrated Circuit with 8 Mbit capacity and a parallel interface, with a 10 ns access time, in a 48-TFBGA (6x8) package.

The IS64WV51216EDBLL-10CTLA3-TR from ISSI, Integrated Silicon Solution Inc is an asynchronous SRAM memory Integrated Circuit with 8 Mbit parallel capacity, 10 ns, in a 44-TSOP II package.

The IS64WV51216BLL-10CTLA3 from ISSI, Integrated Silicon Solution Inc is an 8 Mbit parallel asynchronous SRAM Integrated Circuit rated at 10 ns, in a 44-TSOP II package.

The IS64WV51216BLL-10CTLA3-TR from ISSI, Integrated Silicon Solution Inc is an asynchronous SRAM Integrated Circuit with 8 Mbit parallel memory and 10 ns access time, in a 44-TSOP II package.

The IS64WV51216EDBLL-10CTLA3 from ISSI, Integrated Silicon Solution Inc is an asynchronous SRAM memory Integrated Circuit with 8Mbit parallel capacity and 10 ns access time, in a 44-TSOP II package.

The IS64WV51216BLL-10MLA3-TR from ISSI, Integrated Silicon Solution Inc is an asynchronous SRAM memory Integrated Circuit with 8 Mbit parallel capacity, 10 ns, in a 48-miniBGA (9x11) package.

The IS64WV51216EEBLL-10B2LA3-TR from ISSI, Integrated Silicon Solution Inc is a low-power asynchronous SRAM Integrated Circuit with 8 Mbit capacity, parallel interface, 10 ns, in a 48-TFBGA (6x8) package.

The IS64WV51216EEBLL-10CTLA3 from ISSI, Integrated Silicon Solution Inc is a high-speed asynchronous SRAM memory Integrated Circuit with 8Mbit parallel capacity and 10 ns access time, in a 44-TSOP II package.

The IS64WV51216EEBLL-10BLA3 from ISSI, Integrated Silicon Solution Inc is a low-power asynchronous SRAM Integrated Circuit with 8 Mbit capacity, parallel interface, 10 ns, in a 48-TFBGA (6x8) package.

The IS64WV51216EEBLL-10BLA3-TR from ISSI, Integrated Silicon Solution Inc is an asynchronous SRAM with 8Mbit parallel memory, 10 ns access time, in a 48-TFBGA (6x8) package.

The IS64WV51216EEBLL-10CT2LA3 from ISSI, Integrated Silicon Solution Inc is an 8Mb high-speed, low-power asynchronous memory Integrated Circuit.

The IS64WV51216EEBLL-10B2LA3 from ISSI, Integrated Silicon Solution Inc is an asynchronous SRAM with 8Mbit parallel memory, 10 ns access time, in a 48-TFBGA (6x8) package.

The IS64WV51216EEBLL-10CTLA3-TR from ISSI, Integrated Silicon Solution Inc is an 8 Mbit high-speed/low-power asynchronous SRAM with parallel interface and 10 ns access time, in a 44-TSOP II package.

The IS64WV51216EEBLL-10CT2LA3-TR from ISSI, Integrated Silicon Solution Inc is an 8Mb high-speed, low-power asynchronous memory Integrated Circuit.