Search results for “MIR”

The MIRA220-2QI1D0 RW from ams-OSRAM USA INC. is an RGBIR bare die image sensor with 1600H x 1400V pixels and 2.79 µm x 2.79 µm pixel size.

The MIRA220 2QM1WO FT SE from ams-OSRAM USA INC. is a 2.2 MP near-infrared-enhanced global shutter image sensor with 1600H x 1400V pixels at 2.79 µm x 2.79 µm, supplied as a die.

The MIRA220 2QM1WA FT SE from ams-OSRAM USA INC. is a 2.2 MP near-infrared-enhanced global shutter image sensor with 1600H x 1400V pixels at 2.79 µm x 2.79 µm, supplied as a die.

The MIRA220 2QM1WP FT SE from ams-OSRAM USA INC. is a 2.2 MP near-infrared-enhanced global shutter image sensor with 1600H x 1400V pixels at 2.79 µm x 2.79 µm, supplied as a die.

The MIRA220-2QI1WA 500U FT SE from ams-OSRAM USA INC. is an RGBIR image sensor with 1600H x 1400V pixels, each 2.79 µm x 2.79 µm, in a CSP package with an AR coating and protective cover.

The MIRA220-2QI1WP 500U FT SE from ams-OSRAM USA INC. is an RGBIR image sensor with 1600H x 1400V pixels, each 2.79 µm x 2.79 µm, in a plain CSP package with a protective cover.

The MIRA220 2QMD0RW FT SE from ams-OSRAM USA INC. is a 2.2 MP near-infrared-enhanced global shutter image sensor with 1600H x 1400V pixels at 2.79 µm x 2.79 µm, supplied as a die.

The MIRA220-2QC1WP 500U FT SE from ams-OSRAM USA INC. is an image sensor with 1600H x 1400V pixels, each 2.79 µm x 2.79 µm, in a CSP package with an AR coating and protective cover.

The MIRA220-2QC1WA 500U FT SE from ams-OSRAM USA INC. is an image sensor with 1600H x 1400V pixels, each 2.79 µm x 2.79 µm, in a CSP package with an AR coating and protective cover.

The MIRA220-2QC1D0 RW from ams-OSRAM USA INC. is an RGB bare die image sensor with 1600H x 1400V pixels and 2.79 µm x 2.79 µm pixel size.

The PMV32UP/MIR from Nexperia USA Inc. is a P-channel MOSFET rated 20 V and 4 A (Ta), dissipating 510 mW (Ta) and 4.15 W (Tc), in a surface-mount TO-236AB package.

The PMV65XP/MIR from Nexperia USA Inc. is a P-channel MOSFET rated 20 V and 2.8 A (Ta), with 480 mW (Ta) and 4.17 W (Tc) power dissipation, in a surface-mount TO-236AB package.

The PMV48XP/MIR from Nexperia USA Inc. is a P-channel MOSFET rated 20 V and 3.5 A (Ta), with 510 mW (Ta) and 4.15 W (Tc) power dissipation, in a surface-mount TO-236AB package.

The S-8357G32MC-MIRT2G from ABLIC Inc. is a positive-output step-up (boost) DC-DC controller Integrated Circuit in an SOT-23-5 package.

The S-8357G32MC-MIRT2U from ABLIC Inc. is a positive-output step-up (boost) DC-DC controller Integrated Circuit in a SOT-23-5 package.

RISH MIT30 from Rishabh Instruments is a DIGITAL MULTIMETER CUM INSULATIO

The ISL12020MIRZ-T from Renesas Electronics America Inc is a real-time clock (RTC) Integrated Circuit with clock/calendar, 128B and I2C 2-wire serial interface, in a 20-PowerLFDFN package.

The LHRDMIRS3-N-LA from Thomas Research Products is a passive infrared proximity/occupancy sensor covering 1000 square feet, with relay output, 0-10V dimming and a wall mount, in almond (light) finish.

The LHRDMIRS3-N-IV from Thomas Research Products is a LIGHTHAWK dimming passive infrared occupancy sensor.

The LHRDMIRS3-N-GY from Thomas Research Products is a passive infrared proximity/occupancy sensor covering 1000 square feet, with relay output, 0-10V dimming and a wall mount, in gray.

The ISL12020MIRZ from Renesas Electronics America Inc is a real-time clock Integrated Circuit with clock/calendar, 128B memory and I2C 2-wire serial interface, in a 20-PowerLFDFN package.

The C12501_MIRA-W from Ledil is a clear wide lens with a beam angle of 28° to 44°. Holder required.