Search results for “MMBT4401Q”

The MMBT4401Q-13-F from Diodes Incorporated is an NPN bipolar (BJT) transistor rated 40 V and 600 mA with a 250 MHz transition frequency and 310 mW power dissipation, in a surface-mount SOT-23-3 package.

The MMBT4401Q from Yangjie Technology is an NPN bipolar junction transistor (BJT) rated 0.3 W, 0.6 A and 60 V, in a SOT-23 package.