Search results for “MMBTA06”

The MMBTA06 from Good-Ark Semiconductor is an NPN bipolar (BJT) transistor rated 80 V, 500 mA, 100 MHz and 350 mW, in a surface-mount SOT-223 package.

The MMBTA06 from Yangzhou Yangjie Electronic Technology Co.,Ltd is a surface-mount NPN bipolar junction transistor (BJT) rated 80 V and 500 mA, with a 100 MHz transition frequency and 300 mW power dissipation, in a SOT-23 package.

The MMBTA06 from NTE Electronics, Inc is an NPN bipolar (BJT) transistor rated 80 V, 500 mA, 100 MHz and 350 mW, in a surface-mount SOT-23-3 package.

MMBTA06 from Yangjie Technology is a SOT-23 NPN 0.3W 0.5A 80V Transis

The MMBTA06 from onsemi is an NPN bipolar (BJT) transistor rated 80 V, 500 mA, 100 MHz and 350 mW, in a surface-mount SOT-23-3 package.

The MMBTA06 from Diotec Semiconductor is an NPN bipolar (BJT) transistor rated 80 V and 500 mA, with a transition frequency of 100 MHz and 250 mW power, in a surface-mount SOT-23-3 (TO-236) package.

The MMBTA06-HF from Comchip Technology is an 80 V, 0.5 A NPN bipolar (BJT) transistor in a SOT23-3 package.

The MMBTA06-7-F-52 from Diodes Incorporated is a general-purpose bipolar (BJT) transistor in a SOT23 package.

The MMBTA06-TP from Micro Commercial Co is a surface-mount NPN bipolar junction transistor (BJT) rated 80 V and 500 mA, with a 100 MHz transition frequency and 300 mW power dissipation, in a SOT-23 package.

The MMBTA06-7-F from Diodes Incorporated is an 80 V, 0.5 A NPN bipolar (BJT) transistor in a SOT23-3 package.

The MMBTA06-7 from Diodes Incorporated is an 80 V, 0.5 A NPN bipolar (BJT) transistor in a SOT23-3 package.

The MMBTA06Q-7-F from Diodes Incorporated is an NPN bipolar (BJT) transistor rated 80 V, 500 mA, 100 MHz and 350 mW, in a surface-mount SOT-23-3 package.

The MMBTA06-AU_R1_000A1 from Panjit International Inc. is an NPN bipolar junction transistor (BJT) rated 80 V and 500 mA, with a 100 MHz transition frequency and 225 mW power dissipation, in a surface-mount SOT-23 package.

The MMBTA06_D87Z from onsemi is an NPN bipolar (BJT) transistor rated 80 V, 500 mA, 100 MHz and 350 mW, in a surface-mount SOT-23-3 package.

MMBTA06-AQ from Diotec Semiconductor is a BJT, SOT-23, 80V, 500MA, 0

The MMBTA06_R1_00001 from Panjit International Inc. is an NPN bipolar junction transistor (BJT) rated 80 V and 500 mA, with a 100 MHz transition frequency and 225 mW power dissipation, in a surface-mount SOT-23 package.

The MMBTA06_L98Z from onsemi is an NPN bipolar (BJT) transistor rated 80 V, 500 mA, 100 MHz and 350 mW, in a surface-mount SOT-23-3 package.

The MMBTA06LT1HTSA1 from Infineon Technologies is an NPN bipolar (BJT) transistor rated 80 V and 500 mA, with a 100 MHz transition frequency and 330 mW power dissipation, in a surface-mount PG-SOT23 package.

The MMBTA06WT1G from onsemi is an NPN bipolar (BJT) transistor rated 80 V and 500 mA with a 100 MHz transition frequency and 150 mW power, in a surface-mount SC-70-3 (SOT323) package.

The MMBTA06WT1 from onsemi is an NPN bipolar (BJT) transistor rated 80 V and 500 mA with a 100 MHz transition frequency and 150 mW power, in a surface-mount SC-70-3 (SOT323) package.

The MMBTA06W_R1_00001 from Panjit International Inc. is an NPN bipolar (BJT) transistor rated 80 V and 500 mA, with a 100 MHz frequency rating and 225 mW power rating, in a surface-mount SOT-323 package.

The MMBTA06Q-7-F-52 from Diodes Incorporated is a general-purpose NPN bipolar (BJT) transistor rated 80 V and 500 mA, with a 100 MHz transition frequency and 310 mW power, in a surface-mount SOT-23-3 package.

The MMBTA06LT1 from Infineon Technologies is an 80 V, 0.5 A NPN bipolar (BJT) transistor in a SOT23-3 package.

The MMBTA06Q from Yangjie Technology is a silicon single bipolar (BJT) transistor.