Search results for “MMRF2”
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MMRF2007NR1
NXP USA Inc.The MMRF2007NR1 from NXP USA Inc. is a dual-channel Radio Frequency MOSFET transistor rated 70 V, operating at 940 MHz with 28 V supply, 60 mA, 32.6 dB gain and 35 W output, in a TO-270 WBL-16 package.
View full detailsMMRF2007GNR1
NXP USA Inc.The MMRF2007GNR1 from NXP USA Inc. is a wideband integrated power Radio Frequency LDMOS amplifier.
View full detailsMMRF2005GNR1
NXP USA Inc.The MMRF2005GNR1 from NXP USA Inc. is a single W-CDMA Radio Frequency LDMOS wideband MOSFET.
View full detailsMMRF2005NR1
NXP USA Inc.The MMRF2005NR1 from NXP USA Inc. is a Radio Frequency MOSFET operating at 28 V and 106 mA at 940 MHz, with 35.9 dB gain and 3.2 W output power, in a TO-270 WBL-16 package.
View full detailsMMRF2006NT1
NXP USA Inc.The MMRF2006NT1 from NXP USA Inc. is a W-CDMA Radio Frequency amplifier Integrated Circuit covering 1.8 GHz to 2.17 GHz, in a 24-QFN package.
View full detailsMMRF2011NT1
NXP USA Inc.The MMRF2011NT1 from NXP USA Inc. is a wideband W-CDMA Radio Frequency LDMOS FET covering 728 MHz to 960 MHz with 1.6 W output, in a 24-PQFN-EP (8x8) package.
View full detailsMMRF2004NBR1
NXP USA Inc.The MMRF2004NBR1 from NXP USA Inc. is a Radio Frequency MOSFET rated 28 V and 77 mA at 2.7 GHz, with 28.5 dB gain and 4 W output, in a TO-272 WB-16 package.
View full detailsMMRF2010NR1
NXP USA Inc.The MMRF2010NR1 from NXP USA Inc. is a 50 V Radio Frequency LDMOS transistor rated 80 mA at 1.09 GHz with 32.1 dB gain and 250 W output power, in a TO-270 WB-14 package.
View full detailsMMRF2010GNR1
NXP USA Inc.The MMRF2010GNR1 from NXP USA Inc. is a Radio Frequency LDMOS transistor rated 50 V and 80 mA, operating at 1.09 GHz with 32.1 dB gain and 250 W output power, in a TO-270 WB-14 gull-wing package.
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