Search results for “MT53E256”

The MT53E256M32D2DS-046 WT:B from Micron Technology Inc. is an 8Gbit DRAM memory Integrated Circuit at 2.133 GHz, in a 200-WFBGA package.

The MT53E256M32D2DS-046 AUT:B from Micron Technology Inc. is an 8 Gbit mobile LPDDR4 SDRAM memory Integrated Circuit running at 2.133 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-046 AAT:B from Micron Technology Inc. is a mobile LPDDR4 SDRAM memory Integrated Circuit with 8Gbit capacity and 2.133 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-053 AAT:B TR from Micron Technology Inc. is a 8 Gbit mobile LPDDR4 SDRAM Integrated Circuit at 1.866 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-053 AUT:B from Micron Technology Inc. is a mobile LPDDR4 SDRAM memory Integrated Circuit with 8 Gbit capacity and 1.866 GHz speed, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-053 WT:B from Micron Technology Inc. is a mobile LPDDR4 SDRAM memory Integrated Circuit with 8 Gbit capacity at 1.866 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M16D1DS-046 WT:B from Micron Technology Inc. is a 4 Gbit mobile LPDDR4 SDRAM memory Integrated Circuit operating at 2.133 GHz in a WFBGA package.

The MT53E256M32D2DS-053 AAT:B from Micron Technology Inc. is a mobile LPDDR4 SDRAM memory Integrated Circuit with 8 Gbit capacity, 1.866 GHz operation and a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-046 AIT:B TR from Micron Technology Inc. is an 8 Gbit mobile LPDDR4 SDRAM memory Integrated Circuit rated at 2.133 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-053 AUT:B TR from Micron Technology Inc. is a mobile LPDDR4 SDRAM memory Integrated Circuit with 8 Gbit capacity and a 1.866 GHz clock, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-046 AIT:B from Micron Technology Inc. is a mobile LPDDR4 SDRAM memory Integrated Circuit with 8 Gbit capacity operating at 2.133 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M16D1DS-046 AAT:B TR from Micron Technology Inc. is a mobile LPDDR4 SDRAM memory Integrated Circuit with 4Gbit capacity and 2.133 GHz speed, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-046 AUT:B TR from Micron Technology Inc. is a mobile LPDDR4 SDRAM Integrated Circuit with 8 Gbit capacity and 2.133 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M16D1DS-046 AAT:B from Micron Technology Inc. is a 4 Gbit mobile LPDDR4 SDRAM memory Integrated Circuit operating at 2.133 GHz, in a WFBGA package.

The MT53E256M16D1DS-046 WT:B TR from Micron Technology Inc. is a 4 Gbit mobile LPDDR4 SDRAM Integrated Circuit operating at 2.133 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-046 AAT:B TR from Micron Technology Inc. is a mobile LPDDR4 SDRAM memory Integrated Circuit with 8Gbit capacity at 2.133 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-053 AIT:B from Micron Technology Inc. is a mobile LPDDR4 SDRAM memory Integrated Circuit with 8 Gbit capacity and 1.866 GHz speed, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-053 WT:B TR from Micron Technology Inc. is an 8 Gbit mobile LPDDR4 SDRAM memory Integrated Circuit rated at 1.866 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M64D4NZ-053 WT:B from Micron Technology Inc. is a mobile LPDDR4 SDRAM memory Integrated Circuit with 16 Gbit capacity and a 1.866 GHz clock, in a 376-WFBGA (14x14) package.

The MT53E256M32D2DS-046 WT:B TR from Micron Technology Inc. is an 8Gbit mobile LPDDR4 SDRAM memory Integrated Circuit at 2.133 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-046 IT:B TR from Micron Technology Inc. is a mobile LPDDR4 SDRAM memory Integrated Circuit with 8 Gbit capacity operating at 2.133 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2DS-046 IT:B from Micron Technology Inc. is an 8 Gbit mobile LPDDR4 SDRAM memory Integrated Circuit operating at 2.133 GHz, in a 200-WFBGA (10x14.5) package.

The MT53E256M16D1DS-046 AIT:B TR from Micron Technology Inc. is a 4 Gbit mobile LPDDR4 SDRAM memory Integrated Circuit rated at 2.133 GHz, in a WFBGA package.

The MT53E256M32D2DS-053 AIT:B TR from Micron Technology Inc. is an 8 Gbit DRAM Integrated Circuit operating at 1.866 GHz, in a 200-WFBGA package.

The MT53E256M16D1DS-046 AIT:B from Micron Technology Inc. is a mobile LPDDR4 SDRAM memory Integrated Circuit with 4Gbit capacity and 2.133 GHz speed, in a 200-WFBGA (10x14.5) package.

The MT53E256M32D2FW-046 AUT:B TR from Micron Technology Inc. is a mobile LPDDR4X SDRAM with 8 Gbit parallel capacity, 2.133 GHz speed, 3.5 ns timing and 256MX32 DDP organization, in a 200-TFBGA (10x14.5) package.

The MT53E256M32D2FW-046 WT:B TR from Micron Technology Inc. is a mobile LPDDR4X memory Integrated Circuit with 8 Gbit capacity, parallel interface, 2.133 GHz, 3.5 ns and 200-TFBGA (10x14.5) package.

The MT53E256M32D2FW-046 AAT:B TR from Micron Technology Inc. is an LPDDR4 memory Integrated Circuit with 8G density and a 256M x 32 organization, in an FBGA DDP package.

The MT53E256M16D1FW-046 AAT:B from Micron Technology Inc. is a mobile LPDDR4X SDRAM memory Integrated Circuit with 4Gbit capacity and parallel interface, running at 2.133 GHz with 3.5 ns timing, in a 200-TFBGA (10x14.5) package.

The MT53E256M32D2FW-046 AIT:B TR from Micron Technology Inc. is a mobile LPDDR4X memory Integrated Circuit with 8 Gbit capacity, parallel interface, 2.133 GHz, 3.5 ns and 200-TFBGA (10x14.5) package.

The MT53E256M32D2FW-046 IT:B from Micron Technology Inc. is a mobile LPDDR4X memory Integrated Circuit with 8 Gbit capacity, parallel interface, 2.133 GHz, 3.5 ns and 200-TFBGA (10x14.5) package.

The MT53E256M32D2FW-046 WT:B from Micron Technology Inc. is a mobile LPDDR4X memory Integrated Circuit with 8 Gbit capacity, parallel interface, 2.133 GHz, 3.5 ns and 200-TFBGA (10x14.5) package.

The MT53E256M16D1FW-046 WT:B TR from Micron Technology Inc. is a mobile LPDDR4X SDRAM memory Integrated Circuit with 4Gbit capacity in 256MX16 organization, parallel interface, 2.133 GHz clock, 3.5 ns timing and a 200-TFBGA (10x14.5) package.

The MT53E256M16D1FW-046 WT:B from Micron Technology Inc. is a 4Gbit parallel LPDDR4X mobile SDRAM memory Integrated Circuit at 2.133 GHz with 3.5 ns timing, in a 200-TFBGA (10x14.5) package, with 256MX16 organization.

The MT53E256M16D1FW-046 AAT:B TR from Micron Technology Inc. is a mobile LPDDR4X SDRAM memory Integrated Circuit with 4Gbit capacity and parallel interface, running at 2.133 GHz with 3.5 ns timing, in a 200-TFBGA (10x14.5) package.

The MT53E256M32D2FW-046 AAT:B from Micron Technology Inc. is an 8Gbit parallel LPDDR4X mobile SDRAM memory Integrated Circuit at 2.133 GHz with 3.5 ns timing, in a 200-TFBGA (10x14.5) package, with 256MX32 organization and DDP configuration.

The MT53E256M32D2FW-046 AIT:B from Micron Technology Inc. is a mobile LPDDR4 SDRAM with 8 Gbit parallel capacity, 2.133 GHz speed, 3.5 ns timing and 256MX32 DDP organization, in a 200-TFBGA (10x14.5) package.

The MT53E256M32D2FW-046 AUT:B from Micron Technology Inc. is a mobile LPDDR4 memory Integrated Circuit with 8 Gbit capacity, 256M x 32 organization and DDP design, with parallel interface, 2.133 GHz, 3.5 ns and 200-TFBGA (10x14.5).

The MT53E256M16D1FW-046 AUT:B TR from Micron Technology Inc. is a mobile LPDDR4X SDRAM memory Integrated Circuit with 4Gbit capacity and parallel interface, running at 2.133 GHz with 3.5 ns timing, in a 200-TFBGA (10x14.5) package.

The MT53E256M16D1FW-046 AUT:B from Micron Technology Inc. is a 4Gbit parallel LPDDR4X mobile SDRAM memory Integrated Circuit at 2.133 GHz with 3.5 ns timing, in a 200-TFBGA (10x14.5) package, with 256MX16 organization.

The MT53E256M32D2FW-046 IT:B TR from Micron Technology Inc. is a mobile LPDDR4X SDRAM memory Integrated Circuit with 8Gbit parallel capacity, 2.133 GHz and 3.5 ns timing, in a 200-TFBGA (10x14.5) package, with 256MX32 organization and DDP.