The R1EV58256BDANBI#B2 from Renesas Electronics America Inc is a 256 Kbit parallel EEPROM memory Integrated Circuit with an 85 ns specification, in a 28-DIP package.
The R1EV58256BSCNBI#B2 from Renesas Electronics America Inc is a 256 Kbit parallel EEPROM memory Integrated Circuit with an 85 ns access time in a 28-SOP package.