The RN2906FE,LXHF(CT from Toshiba Semiconductor and Storage is an AEC-Q qualified dual PNP pre-biased bipolar (BJT) transistor rated 50 V and 100 mA, with a 200 MHz transition frequency and 100 mW power, with Q1 base resistor R1 = 4.7 kΩ, in a surface-mount ES6 package.