Search results for “S1F-AT”

The TK62Z60X,S1F from Toshiba Semiconductor and Storage is a power MOSFET transistor (X35 PB-F).

The S1F from NKK Switches is an SPST panel-mount toggle switch rated 15 A and 125 V.

The TK31Z60X,S1F from Toshiba Semiconductor and Storage is an N-channel power MOSFET (X35 PB-F) rated 600 V, 30.8 A (Ta) and 230 W (Tc), through-hole in a TO-247-4L(T) package.

The AMCA31-2R450G-S1F-T from Abracon LLC is a 2.4 GHz chip antenna for Bluetooth and WLAN, operating at 2.405 to 2.495 GHz with 0.5 dBi gain, in a solder surface-mount package.

The TK49N65W,S1F from Toshiba Semiconductor and Storage is a 650 V, 49.2 A (Ta) N-channel power MOSFET rated 400 W (Tc), in a through-hole TO-247 package.

The TW107N65C,S1F from Toshiba Semiconductor and Storage is a G3 650 V silicon carbide N-channel MOSFET rated 20 A (Tc) and 76 W (Tc), in a through-hole TO-247 package, with 107 mΩ.

The TK49N65W5,S1F from Toshiba Semiconductor and Storage is an N-channel power MOSFET (X35, PB-F) rated 650 V and 49.2 A (Ta), 400 W (Tc), through-hole in a TO-247 package.

The TK39N60X,S1F from Toshiba Semiconductor and Storage is an N-channel 600 V, 38.8 A (Ta) MOSFET rated 270 W (Tc), in a through-hole TO-247 package.

The TK35N65W,S1F from Toshiba Semiconductor and Storage is an N-channel MOSFET rated 650 V and 35 A (Ta) with 270 W (Tc) power dissipation, in a through-hole TO-247 package.

The TK17N65W,S1F from Toshiba Semiconductor and Storage is an N-channel MOSFET rated 650 V and 17.3 A, in a TO-247 package.

The TK28N65W,S1F from Toshiba Semiconductor and Storage is an N-channel 650 V, 27.6 A MOSFET rated 230 W (Tc), in a through-hole TO-247 package.

The TK62N60X,S1F from Toshiba Semiconductor and Storage is an N-channel MOSFET rated 600 V and 61.8 A (Ta), with 400 W (Tc) power dissipation, in a through-hole TO-247 package.

The TK31N60X,S1F from Toshiba Semiconductor and Storage is an N-channel MOSFET rated 600 V and 30.8 A (Ta) with 230 W (Tc) power dissipation, in a through-hole TO-247 package.

The TW045N120C,S1F from Toshiba Semiconductor and Storage is a G3 1200 V silicon carbide N-channel MOSFET rated 40 A (Tc) and 182 W (Tc), in a through-hole TO-247 package, with 45 mΩ.

The TK25N60X,S1F from Toshiba Semiconductor and Storage is an N-channel MOSFET rated 600 V and 25 A (Ta), with 180 W (Tc) power rating, in a through-hole TO-247 package.

The TK065N65Z,S1F from Toshiba Semiconductor and Storage is a 650 V, 38 A N-channel MOSFET (Ta) rated 270 W (Tc), in a through-hole TO-247 package.

The TK14N65W5,S1F from Toshiba Semiconductor and Storage is an N-channel MOSFET rated 650 V and 13.7 A (Ta) with 130 W (Tc) power dissipation, in a through-hole TO-247 package.

The TK040Z65Z,S1F from Toshiba Semiconductor and Storage is a 650 V, 57 A N-channel MOSFET (Ta) rated 360 W (Tc), in a through-hole TO-247-4L(T) package.

The TK25N60X5,S1F from Toshiba Semiconductor and Storage is an N-channel MOSFET rated 600 V and 25 A (Ta), with 180 W (Tc) power rating, in a through-hole TO-247 package.

The TK14N65W,S1F from Toshiba Semiconductor and Storage is an N-channel MOSFET rated 650 V and 13.7 A (Ta), with 130 W (Tc) power dissipation, in a through-hole TO-247 package.

The TW060N120C,S1F from Toshiba Semiconductor and Storage is a G3 1200 V silicon carbide N-channel MOSFET rated 36 A (Tc) and 170 W (Tc), in a through-hole TO-247 package, with 60 mΩ.

The S1FLB-M-18 from Vishay General Semiconductor - Diodes Division is a 100 V, 700 mA general-purpose rectifier diode for surface mounting, in a DO-219AB (SMF) package.

The S1FLM-M-18 from Vishay General Semiconductor - Diodes Division is a 1000 V, 1 A general-purpose rectifier diode for surface mounting in a DO-219AB (SMF) package.

The TK090N65Z,S1F from Toshiba Semiconductor and Storage is a 650 V, 30 A N-channel MOSFET (Ta) rated 230 W (Tc), in a through-hole TO-247 package.

The TW030N120C,S1F from Toshiba Semiconductor and Storage is a G3 1200 V silicon carbide N-channel MOSFET rated 60 A (Tc) and 249 W (Tc), in a through-hole TO-247 package, with 30 mΩ.

The TK040N65Z,S1F from Toshiba Semiconductor and Storage is an N-channel MOSFET rated 650 V and 57 A (Ta) with 360 W (Tc) power dissipation, in a through-hole TO-247 package.

The TK35N65W5,S1F from Toshiba Semiconductor and Storage is an N-channel MOSFET rated 650 V and 35 A (Ta) with 270 W (Tc) power dissipation, in a through-hole TO-247 package.

The TW140N120C,S1F from Toshiba Semiconductor and Storage is a G3 1200 V silicon carbide N-channel MOSFET rated 20 A (Tc) and 107 W (Tc), in a through-hole TO-247 package, with 140 mΩ.

The TW083N65C,S1F from Toshiba Semiconductor and Storage is a G3 650 V silicon carbide N-channel MOSFET rated 30 A (Tc) and 111 W (Tc), in a through-hole TO-247 package, with 83 mΩ.

The S1FLM-M-08 from Vishay General Semiconductor - Diodes Division is a general-purpose rectifier diode rated 1000 V and 700 mA, in a surface-mount DO-219AB (SMF) package.

The TK28N65W5,S1F from Toshiba Semiconductor and Storage is an N-channel power MOSFET transistor (X35 PB-F) rated 650 V and 27.6 A (Ta), with 230 W (Tc) power, in a through-hole TO-247 package.

The TW015N120C,S1F from Toshiba Semiconductor and Storage is a G3 1200 V silicon carbide N-channel MOSFET rated 100 A (Tc) and 431 W (Tc), in a through-hole TO-247 package, with 15 mΩ.

The TK40J20D,S1F(O from Toshiba Semiconductor and Storage is an N-channel MOSFET rated 200 V and 40 A, in a TO-3P package.

The AMCA31-2R800G-S1F-T3 from Abracon LLC is a 2.8 GHz chip Radio Frequency antenna for WiMax and WLAN, covering 2.725 to 2.875 GHz with 0.5 dBi gain, for solder surface mounting.

The AMCA72-2R470G-S1F-T from Abracon LLC is a 2.4 GHz Bluetooth and WLAN chip Radio Frequency antenna covering 2.37 GHz to 2.57 GHz with 2.7 dBi gain, in a solder surface-mount package.

The S1F-C from Panduit Corp is a snap clip mounting bracket (Type G F FS).

The TW027N65C,S1F from Toshiba Semiconductor and Storage is a G3 650 V silicon carbide N-channel MOSFET rated 58 A (Tc) and 156 W (Tc), in a through-hole TO-247 package, with 27 mΩ.

The AMCA52-2R350G-S1F-T4 from Abracon LLC is a 2.4 GHz chip Radio Frequency antenna for LTE, WCS, WiMax™ and WLAN, covering 2.275 to 2.425 GHz with 2.5 dBi gain and solder surface mount.