Search results for “SST4416 SOT”

The SST4416-T1-E3 from Vishay Siliconix is an N-channel JFET rated 30 V and 350 mW, in a surface-mount SOT-23 package.

The SST4416-E3 from Vishay Siliconix is an N-channel JFET rated 30 V and 350 mW, in a surface-mount SOT-23 package.

The MIC4416YM4-TR from Microchip Technology is a non-inverting low-side gate driver Integrated Circuit in a SOT-143 package.

The MIC4416BM4 TR from Microchip Technology is a non-inverting low-side gate driver Integrated Circuit in a SOT-143 package.

The CMPF4416A TR from Central Semiconductor Corp is a 35 V N-channel JFET rated 350 mW, for surface mounting in an SOT-23 package.

The SST211 SOT-143 4L ROHS from Linear Integrated Systems, Inc. is a high-speed N-channel lateral DMOS transistor rated 30 V and 50 mA (Ta), with 300 mW (Ta) power dissipation, in a surface-mount SOT-143-4 package.

The PJA3416_R1_00001 from Panjit International Inc. is an N-channel MOSFET rated 20 V and 5.8 A (Ta) with 1.25 W (Ta) power dissipation, in a surface-mount SOT-23 package.

The BCP5616QTA from Diodes Incorporated is an NPN bipolar transistor rated 80 V and 1 A, in a SOT-223-3 package.

The BCP5616TA from Diodes Incorporated is an NPN bipolar (BJT) transistor rated 80 V, 1 A, 150 MHz and 2 W, in a surface-mount SOT-223-3 package.

The DTB543EE3TL from Rohm Semiconductor is a PNP pre-biased bipolar transistor with diode, R1=R2, rated 12 V, 500 mA, 260 MHz and 150 mW, in a surface-mount EMT3 (SOT-416) package.

The 3N163 SOT-143 4L ROHS from Linear Integrated Systems, Inc. is a single P-channel enhancement-mode MOSFET rated 40 V and 50 mA, with 350 mW power dissipation, in a surface-mount SOT-143-4 package.

The SMBT1416LT1 from onsemi is a regulator output DC-DC controller Integrated Circuit in a SOT-23 package.

The DTB543ZE3TL from Rohm Semiconductor is a PNP pre-biased bipolar (BJT) transistor with an integrated diode and R1R2 leak absorption, rated 12 V, 500 mA, 260 MHz and 150 mW, in a surface-mount EMT3 (SOT-416) package.

The PJA3416AE_R1_00001 from Panjit International Inc. is a 20 V N-channel MOSFET rated 6.5 A (Ta) with 1.25 W (Ta) power dissipation, in a surface-mount SOT-23 package.

The MCP1316T-27LE/OT from Microchip Technology is a 1-channel supervisor Integrated Circuit with push-pull (totem pole) output, in a SOT-23-5 package.

The BCP5416H6327XTSA1 from Infineon Technologies is an NPN bipolar (BJT) transistor rated 45 V and 1 A, with a 100 MHz transition frequency and 2 W power rating, in a surface-mount PG-SOT223-4-10 package.

The ZHCS506QTA from Diodes Incorporated is a 60 V, 500 mA Schottky rectifier diode for surface mounting, in a SOT-23-3 package.

The MCP1316T-44NE/OT from Microchip Technology is a push-pull, totem-pole supervisor Integrated Circuit with 1 channel, in a SOT-23-5 package.

The DTD543EE3TL from Rohm Semiconductor is an NPN pre-biased bipolar transistor with diode, R1=R2, rated 12 V, 500 mA, 260 MHz and 150 mW, in a surface-mount EMT3 (SOT-416) package.

The PJA3416A_R1_00001 from Panjit International Inc. is an N-channel MOSFET rated 20 V and 5.8 A (Ta) with 1.25 W (Ta) power dissipation, in a surface-mount SOT-23 package.

The DTD543XE3TL from Rohm Semiconductor is an NPN pre-biased bipolar (BJT) transistor with an integrated diode and R1R2 leak absorption, rated 12 V, 500 mA, 260 MHz and 150 mW, in a surface-mount EMT3 (SOT-416) package.

The DTD543ZE3TL from Rohm Semiconductor is an NPN pre-biased bipolar (BJT) transistor with an integrated diode and R1R2 leak absorption, rated 12 V, 500 mA, 260 MHz and 150 mW, in a surface-mount EMT3 (SOT-416) package.

The ZVP4424GTA from Diodes Incorporated is a P-channel MOSFET rated 240 V and 480 mA (Ta) with 2.5 W (Ta) power dissipation, in a surface-mount SOT-223-3 package.

The MAX6716UTZGD3 from Analog Devices Inc./Maxim Integrated is a 2-channel supervisor Integrated Circuit with a push-pull (totem pole) output, in a SOT-23-6 package.

The LTC4416IMS#TRPBF from Analog Devices Inc. is an OR controller Integrated Circuit for source selection, in a 10-MSOP package.

The DTB513ZE3TL from Rohm Semiconductor is a PNP pre-biased bipolar (BJT) transistor with an integrated diode and R1R2 leak absorption, rated 12 V, 500 mA, 260 MHz and 150 mW, in a surface-mount EMT3 (SOT-416) package.

The ZXMP4A16GTA from Diodes Incorporated is a P-channel MOSFET rated 40 V and 6.4 A (Ta) at 2 W (Ta), for surface mounting in an SOT-223-3 package.

The SST213 SOT-143 4L ROHS from Linear Integrated Systems, Inc. is a high-speed N-channel lateral DMOS FET rated 10 V and 50 mA (Ta), with 300 mW (Ta) power dissipation, in a surface-mount SOT-143-4 package.

The ZHCS506TA from Diodes Incorporated is a 60 V, 500 mA Schottky rectifier diode for surface mounting, in a SOT-23-3 package.

The SMBD1466LT1 from onsemi is a switching diode in a SOT-23 package.

The YJL3416A from Yangjie Technology is an N-channel MOSFET transistor rated 20 V and 7 A, in a SOT-23 package.

The DTB523YE3TL from Rohm Semiconductor is a PNP pre-biased bipolar (BJT) transistor with an integrated diode and R1R2 leak absorption, rated 12 V, 500 mA, 260 MHz and 150 mW, in a surface-mount EMT3 (SOT-416) package.

The ZLLS1000TA from Diodes Incorporated is a 40 V, 1.16 A Schottky rectifier diode for surface mounting, in a SOT-23-3 package.

The MAX6716UTSDD3-T from Analog Devices Inc./Maxim Integrated is a 2-channel supervisor Integrated Circuit with push-pull, totem pole output, in a SOT-23-6 package.

The SMBD1106LT1 from onsemi is a dual diode array in a SOT-23 package.

The SST39LF401C-55-4C-EKE-T from Microchip Technology is a 4Mbit parallel flash memory Integrated Circuit with a 55 ns access time, in a 48-TSOP package.

The FZT458TA from Diodes Incorporated is an NPN bipolar (BJT) transistor rated 400 V and 300 mA, with 50 MHz transition frequency and 2 W power, for surface mounting in a SOT-223-3 package.