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Search results for “avs336m25d16t”

M25P16-VMP6TG TR by Micron Technology Inc. - IC FLASH 16MBIT SPI 75MHZ 8VDFPN

M25P16-VMP6TG TR

Micron Technology Inc.
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M25P16-VMP6TG TR from Micron Technology Inc. is a IC FLASH 16MBIT SPI 75MHZ 8VDFPN

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M25P16-VMF6TP TR by Micron Technology Inc. - IC FLASH 16MBIT SPI 75MHZ 16SOP2

M25P16-VMF6TP TR

Micron Technology Inc.
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M25P16-VMF6TP TR from Micron Technology Inc. is a IC FLASH 16MBIT SPI 75MHZ 16SOP2

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AVS335M2AE16B-F by Cornell Dubilier Electronics (CDE) - ALUMIN CAP 3.3UF 20% 100V SMD

AVS335M2AE16B-F

Cornell Dubilier Electronics (CDE)
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AVS335M2AE16B-F from Cornell Dubilier Electronics (CDE) is a ALUMIN CAP 3.3UF 20% 100V SMD

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AVS336M2AG24B-F by Cornell Dubilier Electronics (CDE) - ALUMIN CAP 33UF 20% 100V SMD

AVS336M2AG24B-F

Cornell Dubilier Electronics (CDE)
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AVS336M2AG24B-F from Cornell Dubilier Electronics (CDE) is a ALUMIN CAP 33UF 20% 100V SMD

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M25P16-VMN6PBA by Micron Technology Inc. - IC FLASH 16MBIT SPI 75MHZ 8SO

M25P16-VMN6PBA

Micron Technology Inc.
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M25P16-VMN6PBA from Micron Technology Inc. is a IC FLASH 16MBIT SPI 75MHZ 8SO

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3KASMC16AHE3_A/H by Vishay General Semiconductor - Diodes Division - TVS DIODE 16VWM 26VC DO214AB

3KASMC16AHE3_A/H

Vishay General Semiconductor - Diodes Division
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3KASMC16AHE3_A/H from Vishay General Semiconductor - Diodes Division is a TVS DIODE 16VWM 26VC DO214AB

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VS-25TTS16SPBF by Vishay General Semiconductor - Diodes Division - SCR 1.6KV 25A TO263AB

VS-25TTS16SPBF

Vishay General Semiconductor - Diodes Division
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VS-25TTS16SPBF from Vishay General Semiconductor - Diodes Division is a SCR 1.6KV 25A TO263AB

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MT53E256M16D1DS-046 AIT:B TR by Micron Technology Inc. - IC DRAM 4GBIT 2.133GHZ WFBGA

MT53E256M16D1DS-046 AIT:B TR

Micron Technology Inc.
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MT53E256M16D1DS-046 AIT:B TR from Micron Technology Inc. is a IC DRAM 4GBIT 2.133GHZ WFBGA

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MT49H16M36SJ-25:B TR by Micron Technology Inc. - IC DRAM 576MBIT PARALLEL 144FBGA

MT49H16M36SJ-25:B TR

Micron Technology Inc.
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MT49H16M36SJ-25:B TR from Micron Technology Inc. is a IC DRAM 576MBIT PARALLEL 144FBGA

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SM5S16AHE3/2D by Vishay General Semiconductor - Diodes Division - TVS DIODE 16VWM 26VC DO218AB

SM5S16AHE3/2D

Vishay General Semiconductor - Diodes Division
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SM5S16AHE3/2D from Vishay General Semiconductor - Diodes Division is a TVS DIODE 16VWM 26VC DO218AB

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ASVTX-13-C-16.369MHZ-I05-T by Abracon LLC - XTAL OSC VCTCXO 16.3690MHZ SNWV

ASVTX-13-C-16.369MHZ-I05-T

Abracon LLC
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ASVTX-13-C-16.369MHZ-I05-T from Abracon LLC is a XTAL OSC VCTCXO 16.3690MHZ SNWV

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MT47H32M16HR-25E AIT:G by Micron Technology Inc. - IC DRAM 512MBIT PARALLEL 84FBGA

MT47H32M16HR-25E AIT:G

Micron Technology Inc.
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MT47H32M16HR-25E AIT:G from Micron Technology Inc. is a IC DRAM 512MBIT PARALLEL 84FBGA

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MT53E1536M32D4DT-046 AAT:A TR by Micron Technology Inc. - IC DRAM 48GBIT 2.133GHZ WFBGA

MT53E1536M32D4DT-046 AAT:A TR

Micron Technology Inc.
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MT53E1536M32D4DT-046 AAT:A TR from Micron Technology Inc. is a IC DRAM 48GBIT 2.133GHZ WFBGA

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MT48LC16M16A2P-6A AIT:G TR by Micron Technology Inc. - IC DRAM 256MBIT PAR 54TSOP II

MT48LC16M16A2P-6A AIT:G TR

Micron Technology Inc.
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MT48LC16M16A2P-6A AIT:G TR from Micron Technology Inc. is a IC DRAM 256MBIT PAR 54TSOP II

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MT53E256M32D2DS-053 AIT:B by Micron Technology Inc. - IC DRAM 8GBIT 1.866GHZ 200WFBGA

MT53E256M32D2DS-053 AIT:B

Micron Technology Inc.
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MT53E256M32D2DS-053 AIT:B from Micron Technology Inc. is a IC DRAM 8GBIT 1.866GHZ 200WFBGA

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MT40A256M16GE-075E AIT:B by Micron Technology Inc. - IC DRAM 4GBIT PARALLEL 96FBGA

MT40A256M16GE-075E AIT:B

Micron Technology Inc.
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MT40A256M16GE-075E AIT:B from Micron Technology Inc. is a IC DRAM 4GBIT PARALLEL 96FBGA

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MDM-25SH034K

ITT Cannon, LLC
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MDM-25SH034K from ITT Cannon, LLC is a CABLE ASY D TO WIRE 25P 203.2MM

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MT53E256M16D1FW-046 AUT:B by Micron Technology Inc. - LPDDR4 4G 256MX16 FBGA

MT53E256M16D1FW-046 AUT:B

Micron Technology Inc.
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MT53E256M16D1FW-046 AUT:B from Micron Technology Inc. is a LPDDR4 4G 256MX16 FBGA

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W25M161AVEIT TR by Winbond Electronics - IC FLASH 16MBIT SPI/QUAD 8WSON

W25M161AVEIT TR

Winbond Electronics
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W25M161AVEIT TR from Winbond Electronics is a IC FLASH 16MBIT SPI/QUAD 8WSON

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MT49H16M36SJ-25:B by Micron Technology Inc. - IC DRAM 576MBIT PARALLEL 144FBGA

MT49H16M36SJ-25:B

Micron Technology Inc.
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MT49H16M36SJ-25:B from Micron Technology Inc. is a IC DRAM 576MBIT PARALLEL 144FBGA

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MT48H32M16LFB4-6 AAT:C TR

Micron Technology Inc.
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MT48H32M16LFB4-6 AAT:C TR from Micron Technology Inc. is a IC DRAM 512MBIT PAR 54VFBGA

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SMBJ16AHM3/H by Vishay General Semiconductor - Diodes Division - TVS DIODE 16VWM 26VC DO214AA

SMBJ16AHM3/H

Vishay General Semiconductor - Diodes Division
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SMBJ16AHM3/H from Vishay General Semiconductor - Diodes Division is a TVS DIODE 16VWM 26VC DO214AA

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MT46V32M16TG-75Z:C TR by Micron Technology Inc. - IC DRAM 512MBIT PARALLEL 66TSOP

MT46V32M16TG-75Z:C TR

Micron Technology Inc.
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MT46V32M16TG-75Z:C TR from Micron Technology Inc. is a IC DRAM 512MBIT PARALLEL 66TSOP

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TPSMC16AHE3/9AT by Vishay General Semiconductor - Diodes Division - TVS DIODE 13.6VWM 22.5VC DO214AB

TPSMC16AHE3/9AT

Vishay General Semiconductor - Diodes Division
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TPSMC16AHE3/9AT from Vishay General Semiconductor - Diodes Division is a TVS DIODE 13.6VWM 22.5VC DO214AB

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W25Q16DVUUJP TR by Winbond Electronics - IC FLASH 16MBIT SPI/QUAD 8USON

W25Q16DVUUJP TR

Winbond Electronics
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W25Q16DVUUJP TR from Winbond Electronics is a IC FLASH 16MBIT SPI/QUAD 8USON

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AS4C256M16D3L-12BANTR by Alliance Memory, Inc. - IC DRAM 4GBIT PARALLEL 96FBGA

AS4C256M16D3L-12BANTR

Alliance Memory, Inc.
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AS4C256M16D3L-12BANTR from Alliance Memory, Inc. is a IC DRAM 4GBIT PARALLEL 96FBGA

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DS2250T-32-16+ by Analog Devices Inc./Maxim Integrated - IC MCU 8BIT 32KB NVSRAM 40SIMM

DS2250T-32-16+

Analog Devices Inc./Maxim Integrated
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DS2250T-32-16+ from Analog Devices Inc./Maxim Integrated is a IC MCU 8BIT 32KB NVSRAM 40SIMM

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ASTMHTD-16.000MHZ-AC-E-T3 by Abracon LLC - MEMS OSC XO 16.0000MHZ LVCMOS

ASTMHTD-16.000MHZ-AC-E-T3

Abracon LLC
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ASTMHTD-16.000MHZ-AC-E-T3 from Abracon LLC is a MEMS OSC XO 16.0000MHZ LVCMOS

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3M CN4490 0.5"" X 54.5YD

3M (TC)
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3M CN4490 0.5"" X 54.5YD from 3M (TC) is a RF EMI SHLDING TAPE 163.5'X0.5

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IRKH91/16A

Vishay General Semiconductor - Diodes Division
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IRKH91/16A from Vishay General Semiconductor - Diodes Division is a SCR DBL LOSCR 2000V 95A ADDAPAK

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AMF-5F-08001800-38-18P

L3 Narda-MITEQ
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AMF-5F-08001800-38-18P from L3 Narda-MITEQ is a AMPLIFIER

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MSTC160-12

Microsemi Corporation
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MSTC160-12 from Microsemi Corporation is a MOD THYRISTOR DOUBLER 160A D1

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LM5123QRGRTQ1

Texas Instruments
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LM5123QRGRTQ1 from Texas Instruments is a PROTOTYPE

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3M CN3490 7"" X 54.5YD

3M (TC)
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3M CN3490 7"" X 54.5YD from 3M (TC) is a RF EMI SHIELDING TAPE 163.5'X7

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MT62F1536M64D8EK-026 AIT:B TR

Micron Technology Inc.
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MT62F1536M64D8EK-026 AIT:B TR from Micron Technology Inc. is a LPDDR5 96GBIT 64 441/441 TFBGA 8

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FW-40-05-G-D-405-065

Samtec Inc.
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FW-40-05-G-D-405-065 from Samtec Inc. is a CONNECTOR HDR 80POS 0.05 STACK SMD

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4106-002

Tusonix a Subsidiary of CTS Electronic Components
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4106-002 from Tusonix a Subsidiary of CTS Electronic Components is a FILTER LC(PI) 3000PF CHASSIS

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SPHWHTL3D50EE4UMMF

Samsung Semiconductor, Inc.
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SPHWHTL3D50EE4UMMF from Samsung Semiconductor, Inc. is a HIGH POWER LED SERIES

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DS26F32MJRQMLV

Texas Instruments
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DS26F32MJRQMLV from Texas Instruments is a QUAD DIFFERENTIAL LINE RECEIVERS

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SL-PGQ2W57SBGL

Samsung Semiconductor, Inc.
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SL-PGQ2W57SBGL from Samsung Semiconductor, Inc. is a LED

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SPHWHTL3D307E6VME6

Samsung Semiconductor, Inc.
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SPHWHTL3D307E6VME6 from Samsung Semiconductor, Inc. is a LED WARM WHITE 3000K 90CRI 2SMD

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MS27505E21T16SD

Corsair
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MS27505E21T16SD from Corsair is a MS27505E21T16SD

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MSFC60-12

Microsemi Corporation
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MSFC60-12 from Microsemi Corporation is a MOD THYRISTOR DIODE DBLR 60A SF1

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MT62F3G32D8DV-026 WT ES:B TR

Micron Technology Inc.
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MT62F3G32D8DV-026 WT ES:B TR from Micron Technology Inc. is a LPDDR5 96G 3GX32 FBGA

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APTGF90SK60T1G

Microsemi Corporation
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APTGF90SK60T1G from Microsemi Corporation is a IGBT MODULE 600V 110A 416W SP1

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SPHWHAHDNF25YZT3D1

Samsung Semiconductor, Inc.
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SPHWHAHDNF25YZT3D1 from Samsung Semiconductor, Inc. is a LED COB LC019D NEUT WHT SQ 4000K

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2P6M(BY)-AZ

Renesas Electronics America Inc
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2P6M(BY)-AZ from Renesas Electronics America Inc is a THYRISTOR, P-GATE, 2A, 400V

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JANTXV2N6693

Microchip Technology
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JANTXV2N6693 from Microchip Technology is a TRANS NPN 400V 15A TO61

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