Search results for “blf7g22”

The BLF7G22L-250P,118 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET transistor rated 28 V and 1.9 A, operating from 2.11 GHz to 2.17 GHz with 18.5 dB gain and 70 W output, in a SOT539A package.

The BLF7G22L-160,118 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET rated 28 V and 1.3 A for 2.11 to 2.17 GHz, with 18 dB gain and 43 W output, in an SOT502A package.

The BLF7G22L-130,118 from Ampleon USA Inc. is a Radio Frequency FET LDMOS rated 65 V with 18.5 dB, in a SOT502A package.

The BLF7G22L-250P,112 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET transistor rated 28 V and 1.9 A, operating from 2.11 GHz to 2.17 GHz with 18.5 dB gain and 70 W output, in a SOT539A package.

The BLF7G22L-200,118 from Ampleon USA Inc. is a Radio Frequency FET LDMOS rated 65 V with 18.5 dB, in a SOT502A package.

The BLF7G22LS-160,112 from Ampleon USA Inc. is a Radio Frequency FET LDMOS rated 65 V with 18 dB, in a SOT502B package.

The BLF7G22LS-130,118 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V, 950 mA, operating from 2.11 GHz to 2.17 GHz with 18.5 dB gain and 30 W output, in a SOT502B package.

The BLF7G22LS-130,112 from Ampleon USA Inc. is an LDMOS Radio Frequency FET rated 65 V and 18.5 dB, in a SOT502B package.

The BLF7G22L-130,112 from Ampleon USA Inc. is a Radio Frequency LDMOS MOSFET rated 28 V with 950 mA, covering 2.11 GHz to 2.17 GHz with 18.5 dB gain and 30 W output, in a SOT502A package.

The BLF7G22L-200,112 from Ampleon USA Inc. is a Radio Frequency FET LDMOS rated 65 V with 18.5 dB, in a SOT502A package.

The BLF7G22L-160,112 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET rated 28 V and 1.3 A for 2.11 to 2.17 GHz, with 18 dB gain and 43 W output, in an SOT502A package.

The BLF7G22LS-160,118 from Ampleon USA Inc. is an LDMOS Radio Frequency FET rated 28 V, 1.3 A, 2.11 to 2.17 GHz, 18 dB and 43 W, in a SOT502B package, with a 65 V designation.

The BLF7G22LS-250P,112 from NXP USA Inc. is an N-channel MOSFET.

The BLF7G22LS-250P,112 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V and 1.9 A, covering 2.11 to 2.17 GHz with 18.5 dB gain and 70 W output, in a SOT539B package.

The BLF7G22LS-250P,118 from Ampleon USA Inc. is a Radio Frequency MOSFET rated 28 V and 1.9 A, covering 2.11 to 2.17 GHz with 18.5 dB gain and 70 W output, in a SOT539B package.

The BLF7G22L-130112 from NXP USA Inc. is a Radio Frequency power bipolar junction transistor (BJT).

The BLF7G22L-100P,112 from Ampleon USA Inc. is a W-CDMA Radio Frequency amplifier Integrated Circuit covering 2 to 2.2 GHz, in a SOT1121A package.

The BLF7G22L-100P,118 from Ampleon USA Inc. is a W-CDMA Radio Frequency amplifier Integrated Circuit covering 2 to 2.2 GHz, in a SOT1121A package.

The BLF7G22LS-200,118 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET rated 28 V and 1.62 A for 2.11 to 2.17 GHz, with 18.5 dB gain and 55 W output, in an SOT502B package.

The BLF7G22LS-100P,112 from Ampleon USA Inc. is a W-CDMA Radio Frequency amplifier Integrated Circuit covering 2 to 2.2 GHz, in a SOT1121B package.

The BLF7G22LS-200,112 from Ampleon USA Inc. is an LDMOS Radio Frequency MOSFET rated 28 V and 1.62 A for 2.11 to 2.17 GHz, with 18.5 dB gain and 55 W output, in an SOT502B package.

The BLF7G22LS-100P,118 from Ampleon USA Inc. is a W-CDMA Radio Frequency amplifier Integrated Circuit covering 2 to 2.2 GHz, in a SOT1121B package.