Search results for “buk9”

The BUK9E3R2-40E,127 from NXP USA Inc. is an N-channel MOSFET rated 40 V and 100 A (Tc) with 234 W (Tc) power dissipation, in a through-hole I2PAK package.

The BUK9E15-60E,127 from NXP USA Inc. is an N-channel MOSFET rated 60 V and 54 A (Tc) with 96 W (Tc) power dissipation, in a through-hole I2PAK package.

The BUK9E1R6-30E,127 from NXP USA Inc. is an N-channel MOSFET rated 30 V and 120 A (Tc) with 349 W (Tc) power dissipation, in a through-hole I2PAK package.

The BUK9E4R4-40B,127 from NXP USA Inc. is an N-channel MOSFET rated 40 V and 75 A (Tc) with 254 W (Tc) power dissipation, in a through-hole I2PAK package.

The BUK9E4R4-80E,127 from NXP USA Inc. is an N-channel MOSFET rated 80 V and 120 A (Tc) with 349 W (Tc) power dissipation, in a through-hole I2PAK package.

The BUK9E4R9-60E,127 from NXP USA Inc. is an N-channel MOSFET rated 60 V and 100 A, in an I2PAK package.

The BUK9E04-30B,127 from NXP USA Inc. is an N-channel MOSFET rated 30 V and 75 A (Tc) with 254 W (Tc) power dissipation, in a through-hole I2PAK package.

The BUK9E2R3-40E,127 from NXP USA Inc. is an N-channel MOSFET rated 40 V and 120 A (Tc) with 293 W (Tc) power dissipation, in a through-hole I2PAK package.

The BUK9E1R9-40E,127 from NXP USA Inc. is an N-channel MOSFET rated 40 V and 120 A (Tj), in a through-hole I2PAK package.

The BUK9E3R2-40B,127 from NXP USA Inc. is an N-channel MOSFET rated 40 V and 100 A (Tc) with 300 W (Tc) power dissipation, in a through-hole I2PAK package.

The BUK9E2R8-60E,127 from NXP USA Inc. is an N-channel MOSFET rated 60 V and 120 A (Tc), with 349 W (Tc) power, in a through-hole I2PAK package.

The BUK9E8R5-40E,127 from NXP USA Inc. is an N-channel MOSFET rated 40 V and 75 A in an I2PAK package.

The BUK9E6R1-100E,127 from NXP USA Inc. is an N-channel MOSFET rated 100 V and 120 A in an I2PAK package.

The BUK9E3R7-60E,127 from NXP USA Inc. is an N-channel MOSFET rated 60 V and 120 A (Tc), with 293 W power dissipation, in a through-hole I2PAK package.

The BUK9K5R1-30EX from NXP USA Inc. is a dual N-channel MOSFET array rated 30 V and 40 A, with 68 W power dissipation, in an LFPAK56D surface-mount package.

The BUK9Y14-40B,115 from NXP USA Inc. is an N-channel MOSFET (>30MHz) rated 40 V and 56 A (Tc), with 85 W (Tc) power, in a surface-mount LFPAK56 (Power-SO8) package.

The BUK9Y07-30B,115 from Nexperia USA Inc. is an N-channel MOSFET rated 30 V and 75 A (Tc) with 105 W (Tc) power dissipation, in a surface-mount LFPAK56 (Power-SO8) package.

The BUK9Y19-55B,115 from Nexperia USA Inc. is an N-channel MOSFET rated 55 V and 46 A (Tc) with 85 W (Tc) power dissipation, in a surface-mount LFPAK56 (Power-SO8) package.

The BUK9Y11-30B,115 from Nexperia USA Inc. is an N-channel MOSFET rated 30 V and 59 A (Tc), with 75 W (Tc) power, in a surface-mount LFPAK56 / Power-SO8 package.

The BUK9Y11-80EX from NXP Semiconductors is an N-channel MOSFET rated 80 V and 84 A (Tc), with 194 W (Tc) power dissipation, in a surface-mount LFPAK56 (Power-SO8) package.

The BUK9Y19-75B,115 from Nexperia USA Inc. is a 75 V, 48.2 A N-channel MOSFET rated 106 W (Tc) in a surface-mount LFPAK56 (Power-SO8) package.

The BUK9Y6R0-60E,115 from NXP USA Inc. is an N-channel MOSFET rated 60 V and 100 A (Tc), with 195 W (Tc) power, in a surface-mount LFPAK56 (Power-SO8) package, also rated >30 MHz.

The BUK9V13-40HX from Nexperia USA Inc. is a dual N-channel MOSFET array rated 40 V and 42 A (Ta), with 46 W (Ta) power dissipation, in a surface-mount LFPAK56D package.

The BUK9Y15-100E,115 from Nexperia USA Inc. is a 100 V, 69 A N-channel MOSFET rated 195 W (Tc) in a surface-mount LFPAK56 (Power-SO8) package.

The BUK9Y22-100E,115 from Nexperia USA Inc. is an N-channel MOSFET rated 100 V and 49 A (Tc) with 147 W (Tc) power dissipation, in a surface-mount LFPAK56 (Power-SO8) package.

The BUK9Y19-55B/C2,115 from Nexperia USA Inc. is a 55 V, 46 A N-channel MOSFET in a surface-mount LFPAK56 (Power-SO8) package.

The BUK9Y65-100E,115 from NXP USA Inc. is an N-channel MOSFET rated 100 V and 19 A (Tc), with 64 W (Tc) power, in a surface-mount LFPAK56 (Power-SO8) package, also rated >30 MHz.

The BUK9K35-60RAX from Nexperia USA Inc. is a 60 V, 22 A (Ta) MOSFET array with 38 W (Ta) power dissipation, for surface mounting in an LFPAK56D package (SOT1205).

The BUK9M15-40HX from Nexperia USA Inc. is an N-channel MOSFET rated 40 V and 30 A (Ta) with 44 W (Ta) power dissipation, in a surface-mount LFPAK33 package.

The BUK9Y30-75B,115 from Nexperia USA Inc. is an N-channel 75 V MOSFET rated 34 A (Tc) with 85 W (Tc) power dissipation, in a surface-mount LFPAK56 (Power-SO8) package.

The BUK9Y2R8-40HX from Nexperia USA Inc. is an N-channel 40 V MOSFET.

The BUK9K13-60EX from Nexperia USA Inc. is a dual N-channel MOSFET array rated 60 V and 40 A, with 64 W power dissipation, in a surface-mount LFPAK56D package.

The BUK9Y1R3-40HX from Nexperia USA Inc. is an N-channel 40 V MOSFET.

The BUK9Y59-60E,115 from NXP USA Inc. is an N-channel MOSFET rated 60 V and 16.7 A (Tc), with 37 W (Tc) power dissipation, in a surface-mount LFPAK56 (Power-SO8) package. Its on-resistance is 59 mΩ.

The BUK9M24-60EX from Nexperia USA Inc. is a 60 V, 32 A N-channel MOSFET rated 55 W (Tc) in a surface-mount LFPAK33 package.

BUK9K25-40RAX from Nexperia USA Inc. is a BUK9K25-40RA/SOT1205/LFPAK56D

The BUK9M43-100EX from Nexperia USA Inc. is an N-channel MOSFET rated 100 V and 25 A in an LFPAK33 package.

The BUK9M10-30EX from Nexperia USA Inc. is an N-channel MOSFET rated 30 V and 54 A (Tc), with 55 W (Tc) power dissipation, in a surface-mount LFPAK33 package.

The BUK9D23-40EX from Nexperia USA Inc. is an N-channel MOSFET rated 40 V and 8 A (Ta) with 15 W (Tc) power dissipation, in a surface-mount DFN2020MD-6 package.

The BUK9Y40-55B,115 from Nexperia USA Inc. is a 55 V, 26 A N-channel MOSFET rated 59 W (Tc) in a surface-mount LFPAK56 (Power-SO8) package.

The BUK9Y07-30B115 from NXP USA Inc. is a power MOSFET transistor.

The BUK951R9-40E,127 from NXP USA Inc. is an N-channel MOSFET rated 40 V and 120 A (Tc) with 349 W (Tc) power dissipation, in a through-hole TO-220AB package.