US Owned and Operated
Search results for “coolgan”
Products
IGLD60R190D1AUMA1
Infineon Technologies
Low stock
The IGLD60R190D1AUMA1 from Infineon Technologies is an N-channel MOSFET rated 600 V and 10 A (Tc) at 62.5 W (Tc), in a surface-mount PG-LSON-8-1 package.
View full detailsIGLR60R340D1XUMA1
Infineon Technologies
Low stock
The IGLR60R340D1XUMA1 from Infineon Technologies is an N-channel GaN FET rated 600 V and 8.2 A (Tc), 41.6 W (Tc), in a surface-mount PG-TSON-8-7 package.
View full detailsIGLR60R260D1XUMA1
Infineon Technologies
Low stock
The IGLR60R260D1XUMA1 from Infineon Technologies is a surface-mount N-channel GaN MOSFET rated 600 V and 10.4 A (Tc), dissipating 52 W (Tc), in a PG-TSON-8-7 package.
View full details
IGT60R070D1ATMA1
Infineon Technologies
Low stock
The IGT60R070D1ATMA1 from Infineon Technologies is a GANFET N-channel transistor rated 600 V and 31 A in an 8HSOF package.
View full detailsIGI60F2020A1LAUMA1
Infineon Technologies
Low stock
The IGI60F2020A1LAUMA1 from Infineon Technologies is a half-bridge (3) driver for DC motors and DC-DC converters with NMOS and PMOS outputs, rated 5 A, in a PG-TIQFN-28-1 package.
View full details
IGLD60R070D1AUMA3
Infineon Technologies
Low stock
The IGLD60R070D1AUMA3 from Infineon Technologies is a GaN N-channel FET rated 600 V and 15 A (Tc) with 114 W (Tc) power dissipation, in a surface-mount PG-LSON-8-1 package.
View full detailsIGI60F5050A1LAUMA1
Infineon Technologies
Low stock
The IGI60F5050A1LAUMA1 from Infineon Technologies is a general-purpose half-bridge driver Integrated Circuit for power MOSFETs, in a PG-TIQFN-28-1 package.
View full details
IGT60R070D1ATMA4
Infineon Technologies
Low stock
The IGT60R070D1ATMA4 from Infineon Technologies is a GaN N-channel FET rated 600 V and 31 A (Tc) with 125 W (Tc) power dissipation, in a surface-mount PG-HSOF-8-3 package.
View full details
IGO60R070D1AUMA1
Infineon Technologies
Low stock
The IGO60R070D1AUMA1 from Infineon Technologies is a GaN FET rated 600 V and 31 A (Tc), with 125 W (Tc) power dissipation, in a surface-mount PG-DSO-20-85 package.
View full detailsIGI60F140A1LAUMA1
Infineon Technologies
Low stock
The IGI60F140A1LAUMA1 from Infineon Technologies is a general-purpose half-bridge driver Integrated Circuit for power MOSFETs, rated 1 A, in a PG-TIQFN-21-1 package.
View full details
IGOT60R070D1AUMA1
Infineon Technologies
Low stock
The IGOT60R070D1AUMA1 from Infineon Technologies is an N-channel GaNFET rated 600 V and 31 A (Tc), with 125 W (Tc) power dissipation, in a surface-mount PG-DSO-20-87 package.
View full detailsIGI60F2727A1LAUMA1
Infineon Technologies
Low stock
The IGI60F2727A1LAUMA1 from Infineon Technologies is a half-bridge (3) driver for DC motors and DC-DC converters with NMOS and PMOS outputs, rated 4.5 A, in a PG-TIQFN-28-1 package.
View full detailsIGI60F1414A1LAUMA1
Infineon Technologies
Low stock
The IGI60F1414A1LAUMA1 from Infineon Technologies is a general-purpose half-bridge (2) driver Integrated Circuit in a 28-TIQFN package (PG-TIQFN-28-1).
View full detailsIGO60R042D1AUMA2
Infineon Technologies
In stock
The IGO60R042D1AUMA2 from Infineon Technologies is a surface-mount GaN MOSFET rated 600 V, in a PG-DSO-20-85 package.
View full detailsIGLR60R190D1XUMA1
Infineon Technologies
Low stock
The IGLR60R190D1XUMA1 from Infineon Technologies is an N-channel GaN FET rated 600 V and 12.8 A (Tc), 55.5 W (Tc), in a surface-mount PG-TSON-8-6 package.
View full details
IGOT60R070D1AUMA3
Infineon Technologies
Low stock
The IGOT60R070D1AUMA3 from Infineon Technologies is a GaN N-channel FET rated 600 V and 31 A (Tc) with 125 W (Tc) power dissipation, in a surface-mount PG-DSO-20-87 package.
View full detailsTop Manufactures
