Search results for “mt29rz4b2”

The MT29RZ4B2DZZHHTB-18I.80F from Micron Technology Inc. is a memory Integrated Circuit combining 4 Gbit NAND flash and 2 Gbit LPDDR2 DRAM, with a parallel interface at 533 MHz in a 162-VFBGA (10.5x8) package.

The MT29RZ4B2DZZHHTB-18I.80F TR from Micron Technology Inc. is a combined NAND flash and LPDDR2 DRAM memory Integrated Circuit with 4 Gbit (NAND) and 2 Gbit (LPDDR2) capacities, parallel interface at 533 MHz, in a 162-VFBGA (10.5x8) package.

The MT29RZ4B2DZZHHTB-18W.80F from Micron Technology Inc. is a flash and DRAM memory Integrated Circuit with 4Gbit NAND flash and 2Gbit LPDDR2 DRAM, a parallel interface at 533 MHz, in a 162-VFBGA (10.5x8) package.

The MT29RZ4B2DZZHGSK-18 W.80E from Micron Technology Inc. is a 4 Gbit parallel flash RAM Integrated Circuit in a 162-VFBGA package.

The MT29RZ4B2DZZHGSK-18 W.80E TR from Micron Technology Inc. is a memory Integrated Circuit combining 4 Gbit NAND flash and 2 Gbit LPDDR2 DRAM, with a parallel interface at 533 MHz, in a 162-VFBGA (11.5x13) package.

The MT29RZ4B2DZZHHPS-18I.84F TR from Micron Technology Inc. is a MASSFLASH/LPDDR2 6G memory Integrated Circuit.

The MT29RZ4B2DZZHHTB-18W.80F TR from Micron Technology Inc. is a 4G parallel flash memory Integrated Circuit in a 162-VFBGA package.