The NTE159 from NTE Electronics, Inc is a PNP bipolar (BJT) transistor rated 80 V and 800 mA with 625 mW power dissipation, in a through-hole TO-92 package.
The NTE159-10 from NTE Electronics, Inc is a PNP bipolar (BJT) transistor rated 80 V and 800 mA, with 625 mW power dissipation, in a TO-92 through-hole package, sold as a 10-pack.
The NTE159-5 from NTE Electronics, Inc is a PNP bipolar (BJT) transistor rated 80 V and 800 mA with 625 mW power dissipation, in a through-hole TO-92 package, sold as a 5-pack.
The NTE159M from NTE Electronics, Inc is a PNP bipolar (BJT) transistor rated 60 V and 600 mA, with a 200 MHz rating and 1.8 W power rating, in a through-hole TO-18 package.
The NTE159MCP from NTE Electronics, Inc is a PNP bipolar (BJT) transistor rated 80 V and 800 mA, with a 250 MHz rating and 625 mW power rating, in a through-hole TO-92 package.