Search results for “spb10”

The SPB10N10L G from Infineon Technologies is an N-channel MOSFET rated 100 V and 10.3 A (Tc) with 50 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB10N10 from Infineon Technologies is an N-channel MOSFET rated 100 V and 10.3 A (Tc) with 50 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB10N10L from Infineon Technologies is an N-channel MOSFET rated 100 V and 10.3 A (Tc) with 50 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB10N10 G from Infineon Technologies is an N-channel MOSFET rated 100 V and 10.3 A (Tc) with 50 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB10N10LG from Infineon Technologies is an N-channel power MOSFET rated 100 V, 10.3 A (Tc) and 50 W (Tc), in a surface-mount PG-TO263-3-2 package.

The SPB1005-R10M from Bourns Inc. is a 100 nH shielded power bead inductor rated 53 A.

The SPB100N08S2-07 from Infineon Technologies is an N-channel MOSFET rated 75 V and 100 A (Tc) with 300 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB1012-R10Y from Bourns Inc. is a 100 nH shielded power bead inductor rated 60 A.

The SPB100N06S2-05 from Infineon Technologies is an N-channel MOSFET rated 55 V and 100 A (Tc) with 300 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB100N03S2L-03 from Infineon Technologies is an N-channel MOSFET rated 30 V and 100 A (Tc) with 300 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB100N03S2-03 from Infineon Technologies is an N-channel MOSFET rated 30 V and 100 A (Tc) with 300 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB100N03S2-03 G from Infineon Technologies is an N-channel MOSFET rated 30 V and 100 A (Tc) with 300 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB100N04S2-04 from Infineon Technologies is an N-channel MOSFET rated 40 V and 100 A (Tc) with 300 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB100N06S2L-05 from Infineon Technologies is an N-channel MOSFET rated 55 V and 100 A (Tc) with 300 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB100N03S203T from Infineon Technologies is an N-channel MOSFET rated 30 V and 100 A (Tc) with 300 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB100N08S2L-07 from Infineon Technologies is an N-channel MOSFET rated 75 V and 100 A (Tc) with 300 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB100N04S2L-03 from Infineon Technologies is an N-channel MOSFET rated 40 V and 100 A (Tc) with 300 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB1005-R22M from Bourns Inc. is a 220 nH shielded power bead inductor rated 53 A with a 0.35 mΩ maximum resistance.

The SPB1005-R15M from Bourns Inc. is a 150 nH shielded power bead inductor rated 53 A with a 0.35 mΩ maximum resistance.

The SPB100N03S2L03T from Infineon Technologies is an N-channel MOSFET rated 30 V and 100 A in a TO-263-3 package.

The SPB1005-R12M from Bourns Inc. is a 120 nH shielded power bead inductor rated 53 A with a 0.35 mΩ maximum resistance.

The SPB100N03S2L-03 G from Infineon Technologies is an N-channel MOSFET rated 30 V and 100 A (Tc) with 300 W (Tc) power dissipation, in a surface-mount PG-TO263-3-2 package.

The SPB1007-R27M from Bourns Inc. is a 270 nH shielded power bead inductor rated 61 A with a 0.35 mΩ maximum resistance.

The SPB1007-R30M from Bourns Inc. is a 300 nH shielded power bead inductor rated 61 A with a 0.35 mΩ maximum resistance.

The SPB1007-R22M from Bourns Inc. is a 215 nH shielded power bead inductor rated 61 A.

The SPB1012-R13Y from Bourns Inc. is a 130 nH shielded power bead inductor rated 60 A.

The SPB1012-R12Y from Bourns Inc. is a 120 nH shielded power bead inductor rated 60 A with a 0.14 mΩ maximum resistance.

The SPB1007-R23M from Bourns Inc. is a 230 nH shielded power bead inductor rated 61 A.

The SPB1007-R17M from Bourns Inc. is a 175 nH shielded power bead inductor rated 61 A with a 0.35 mΩ maximum resistance.

The SPB10045E3 from Microsemi Corporation is a dual independent diode array rated 45 V and 100 A, with chassis mounting in an SOT-227-4 (miniBLOC) package.

The SPB1012-R15Y from Bourns Inc. is a 150 nH shielded power bead inductor rated 60 A.

The SPB1012-R33Y from Bourns Inc. is a 330 nH shielded power bead inductor rated 60 A.

The SPB1007-R15M from Bourns Inc. is a 150 nH shielded power bead inductor rated 61 A.

The SPB1007-R12M from Bourns Inc. is a 115 nH shielded power bead inductor rated 61 A with a 0.35 mΩ maximum resistance.