Bipolar (BJT)

The DDTB142JU-7 from Diodes Incorporated is a PNP pre-biased bipolar transistor rated 200 mW in an SOT323 package.

The SD1274-01 from STMicroelectronics is a Radio Frequency NPN bipolar (BJT) transistor rated 16 V and 8 A with 70 W power dissipation, in a surface-mount M113 package.

The NESG270034-T1-AZ from CEL is an NPN bipolar Radio Frequency transistor rated 9.2 V, 750 mA and 1.9 W, in a surface-mount SOT-89 package.

The NE85639-T1-A from CEL is an NPN Radio Frequency bipolar transistor rated 12 V, 100 mA, 7 GHz and 200 mW, in a SOT-143 surface-mount package (same as 2SC4093).

The 2SC5085-O(TE85L,F) from Toshiba Semiconductor and Storage is an NPN bipolar Radio Frequency transistor rated 12 V, 80 mA, 7 GHz and 100 mW, in a surface-mount SC-70 package.

The NE662M04-T2-A from CEL is an NPN Radio Frequency bipolar transistor rated 3.3 V, 35 mA, 25 GHz and 115 mW, in an M04 surface-mount package (same as 2SC5508).

The NE68119-T1-A from CEL is an NPN Radio Frequency bipolar transistor rated 10 V, 65 mA, 7 GHz and 125 mW, in an SC-75 (USM) surface-mount package (same as 2SC5007).

The NE85633-T1B-R25-A from CEL is an NPN silicon Radio Frequency transistor (same as 2SC3356) rated 12 V, 100 mA, 7 GHz and 200 mW, in a surface-mount 3-MINIMOLD package.

The NTE237 from NTE Electronics, Inc is an NPN bipolar Radio Frequency transistor rated 60 V, 2 A, 300 MHz and 10 W, in a through-hole TO-39 package.

The 2SC4915-O,LF from Toshiba Semiconductor and Storage is an NPN bipolar Radio Frequency transistor rated 30 V, 20 mA, 550 MHz and 100 mW, in a surface-mount SSM package.

The NTE486 from NTE Electronics, Inc is an NPN bipolar Radio Frequency transistor rated 20 V, 150 mA, 2 GHz and 2.5 W, in a through-hole TO-39 package.

The UPA806T-T1-A from CEL is a dual NPN bipolar Radio Frequency transistor (2 NPN) rated 6 V, 30 mA, 12 GHz and 200 mW, in a surface-mount 6-SuperMiniMold package.

The NE68139-T1-A from CEL is an NPN Radio Frequency bipolar transistor rated 10 V, 65 mA, 9 GHz and 200 mW, in a SOT-143 surface-mount package (same as 2SC4094).

The NTE2687 from NTE Electronics, Inc is an NPN bipolar Radio Frequency transistor rated 450 V, 8 A, 20 MHz and 45 W, in a through-hole TO-220 package.

The NTE311 from NTE Electronics, Inc is an NPN bipolar Radio Frequency transistor rated 30 V, 400 mA, 800 MHz and 5 W, in a through-hole TO-39 package.

The NE85633-T1B-A from CEL is an NPN silicon Radio Frequency transistor (same as 2SC3356) rated 12 V, 100 mA, 7 GHz and 200 mW, in a surface-mount 3-MINIMOLD package.

The 2SC5551AE-TD-E from onsemi is a Radio Frequency NPN transistor rated 30 V, 300 mA, 3.5 GHz and 1.3 W, in a surface-mount PCP package.

The HFA3096BZ from Renesas Electronics America Inc is a 3 NPN + 2 PNP Radio Frequency transistor array rated 12 V and 15 V, 65 mA, 8 GHz and 5.5 GHz, 150 mW, in a surface-mount 16-SOIC package.

The HFA3127B96-HC from Harris Corporation is a 5-element NPN Radio Frequency transistor array rated 12 V and 65 mA (0.037 A) at 8 GHz and 150 mW, in a surface-mount 16-SOIC package.

The HFA3128B from Harris Corporation is a Radio Frequency small signal bipolar junction transistor (BJT).

The NE68519-T1-A from CEL is an NPN silicon Radio Frequency amplifier transistor rated 6 V, 30 mA, 12 GHz and 125 mW, in an SC-75 (USM) surface-mount package. It is a direct equivalent to the 2SC5010.

The NE68030-T1-A from CEL is an NPN silicon Radio Frequency amplifier transistor rated 10 V, 35 mA, 8 GHz and 150 mW, in an SOT-323 surface-mount package. It is a direct equivalent to the 2SC4228.

The NE68033-T1B-A from CEL is an NPN silicon Radio Frequency amplifier transistor rated 10 V, 35 mA, 10 GHz and 200 mW, in an SOT-23-3 surface-mount package. It is a direct equivalent to the 2SC3585.

The UPA810T-T1-A from CEL is a dual NPN bipolar Radio Frequency transistor (2 NPN) rated 12 V, 100 mA, 4.5 GHz and 200 mW, in a surface-mount 6-SuperMiniMold package.

The 2SC5752-T1-A from Renesas Electronics America Inc is an NPN bipolar Radio Frequency transistor rated 6 V, 100 mA, 12 GHz and 200 mW, in a surface-mount SOT-343 package.

The NE58219-T1-A from CEL is an NPN bipolar Radio Frequency transistor rated 12 V, 60 mA, 5 GHz and 100 mW, in a surface-mount SC-75 (USM) package.

The NE68819-T1-A from CEL is an NPN bipolar Radio Frequency transistor rated 6 V, 100 mA, 9 GHz and 125 mW, in a surface-mount SC-75 (USM) package.

The NE85619-T1-A from CEL is an NPN silicon Radio Frequency amplifier transistor rated 12 V, 100 mA, 4.5 GHz and 125 mW, in an SOT-523 surface-mount package. It is a direct equivalent to the 2SC5006.

The BFR740EL3E6829XTSA1 from Infineon Technologies is a Radio Frequency bipolar (BJT) transistor.

The FH105A-TR-E from onsemi is a Radio Frequency bipolar (BJT) transistor rated 10 V and 30 M.

The NSVF6001SB6T1G from onsemi is an NPN single Radio Frequency transistor rated 12 V, from the Transistors family, Bipolar (BJT) subfamily.

The MCH3007-TL-H from onsemi is a single Radio Frequency bipolar (BJT) transistor rated 12 V.

The FH102A-TR-E from onsemi is a Radio Frequency bipolar (BJT) transistor rated 10 V and 70 M.

The 2SC4853A-4-TL-E from Fairchild Semiconductor is a Radio Frequency small-signal bipolar (BJT) transistor.

The MMBTH10 from Fairchild Semiconductor is a Radio Frequency small-signal bipolar (BJT) transistor.