FETs, MOSFETs

The PD55035-E from STMicroelectronics is a Radio Frequency MOSFET rated 12.5 V, 200 mA and 500 MHz, with 16.9 dB gain and 35 W output, in a PowerSO-10RF (formed lead) package. It is rated for a 40 V drain.

The PD84010S-E from STMicroelectronics is a Radio Frequency N-channel MOSFET transistor rated 7.5 V, 300 mA, 870 MHz, 16.3 dB and 2 W, in a PowerSO-10RF package with straight leads.

The STP90N55F4 from STMicroelectronics is an N-channel MOSFET rated 55 V and 90 A (Tc) with 150 W (Tc) power dissipation, in a through-hole TO-220 package.

The STP80NF55L-06 from STMicroelectronics is an N-channel MOSFET rated 55 V and 80 A (Tc) with 300 W (Tc) power dissipation, in a through-hole TO-220 package.

The STI270N4F3 from STMicroelectronics is an N-channel MOSFET rated 40 V and 160 A (Tc) with 330 W (Tc) power dissipation, in a through-hole I2PAK package.

The SD2942 from STMicroelectronics is an N-channel Radio Frequency MOSFET rated 50 V and 500 mA, operating at 175 MHz with 17 dB gain and 350 W power, in an M244 package.

The SD2902 from STMicroelectronics is an N-channel Radio Frequency MOSFET rated 28 V and 25 mA, operating at 400 MHz with 13.5 dB gain and 15 W power, in an M113 package.

The PD54008-E from STMicroelectronics is a Radio Frequency MOSFET rated 7.5 V (25V) and 150 mA at 500 MHz, providing 8 W with 11.5 dB gain, in a 10-PowerSO package.

The LET9045F from STMicroelectronics is an LDMOS Radio Frequency MOSFET rated 28 V (80V, 9A) and 300 mA at 960 MHz, with 17.7 dB gain and 59 W, in an M250 package.

The LET20030C from STMicroelectronics is a Radio Frequency MOSFET rated 28 V (80V) and 400 mA at 2 GHz, with 13.9 dB gain and 45 W, in an M243 package.

The SD4933 from STMicroelectronics is an N-channel Radio Frequency MOSFET rated 50 V and 250 mA, operating at 30 MHz with 24 dB gain and 300 W power, in an M177 package.

The PD85015TR-E from STMicroelectronics is an N-channel Radio Frequency FET rated 13.6 V and 150 mA, operating at 870 MHz with 16 dB gain and 15 W power, in a PowerSO-10RF (formed lead) package.

The STAC2932FW from STMicroelectronics is an N-channel Radio Frequency power MOSFET rated 50 V, 250 mA and 175 MHz with 390 W output, in a STAC244F package (STAC244B, 300W).

The PD57070-E from STMicroelectronics is a Radio Frequency MOSFET rated 28 V (65V) and 250 mA at 945 MHz, with 14.7 dB gain and 70 W, in a PowerSO-10RF (formed lead) package.

The MMBFJ310LT1 from onsemi is an N-channel Radio Frequency JFET MOSFET rated 10 V, in a surface-mount SOT-23 package.

The STAC2932B from STMicroelectronics is an N-channel Radio Frequency power MOSFET rated 50 V, 250 mA and 175 MHz with 390 W, in a STAC244B package (300W).

The PD20010TR-E from STMicroelectronics is an N-channel Radio Frequency MOSFET rated 13.6 V and 150 mA, operating at 2 GHz with 11 dB gain and 10 W power, in a PowerSO-10RF (formed lead) package.

The SD57060-01 from STMicroelectronics is a Radio Frequency MOSFET rated 28 V, 100 mA, operating at 945 MHz with 15 dB gain and 60 W output, in an M250 package.

The PD55015TR-E from STMicroelectronics is an N-channel Radio Frequency MOSFET rated 12.5 V, 150 mA, operating at 500 MHz with 14 dB gain and 15 W output, in a PowerSO-10RF package with formed leads.

The LET9060STR from STMicroelectronics is a Radio Frequency LDMOS FET rated 28 V, 300 mA, operating at 960 MHz with 17.2 dB gain and 60 W output, in a PowerSO-10RF package with straight leads.

The BS170ZL1G from onsemi is an N-channel MOSFET rated 60 V and 500 mA (Ta), with 350 mW power dissipation (Ta), in a through-hole TO-92 (TO-226) package.

The FDMS7676 from onsemi is an N-channel MOSFET rated 30 V, 16 A (Ta) and 28 A (Tc), with 2.5 W (Ta) and 48 W (Tc) power dissipation, in a surface-mount 8-PQFN (5x6) package.

The FDMS7680 from onsemi is an N-channel MOSFET rated 30 V, 14 A (Ta) and 28 A (Tc), with 2.5 W (Ta) and 33 W (Tc) power dissipation, in a surface-mount 8-PQFN (5x6) package.

The CSD19533Q5A from Texas Instruments is an N-channel MOSFET rated 100 V and 100 A (Ta), with 3.2 W (Ta) and 96 W (Tc) power dissipation, in a surface-mount 8-VSONP (5x6) package.

The STL60N3LLH5 from STMicroelectronics is an N-channel MOSFET rated 30 V and 60 A (Tc), with 60 W (Tc) power dissipation, in a surface-mount PowerFlat (5x6) package.

The STL50NH3LL from STMicroelectronics is an N-channel MOSFET rated 30 V and 27 A (Tc), with 60 W (Tc) power dissipation, in a surface-mount PowerFlat (5x6) package.

The CSD18532NQ5B from Texas Instruments is an N-channel MOSFET rated 60 V, 22 A (Ta) and 100 A (Tc), with 3.2 W (Ta) power dissipation, in a surface-mount 8-VSON-CLIP (5x6) package.

The STS8DNH3LL from STMicroelectronics is a MOSFET array with two N-channels rated 30 V and 8 A, with 2 W power dissipation, in a surface-mount 8-SOIC package.

The FDMS8674 from onsemi is an N-channel MOSFET rated 30 V, 17 A (Ta) and 21 A (Tc), with 2.5 W (Ta) and 78 W (Tc) power dissipation, in a surface-mount 8-PQFN (5x6) package.

The STD25N10F7 from STMicroelectronics is an N-channel MOSFET rated 100 V and 25 A (Tc), with 40 W (Tc) power dissipation, in a surface-mount DPAK package.

The SUM90N08-6M2P-E3 from Vishay Siliconix is an N-channel MOSFET rated 75 V and 90 A (Tc), in a surface-mount TO-263 (D²Pak) package.

The STH265N6F6-2AG from STMicroelectronics is an N-channel MOSFET rated 60 V and 180 A (Tc), with 300 W (Tc) power dissipation, in a surface-mount H2Pak-2 package.

The NTB5405NT4G from onsemi is an N-channel MOSFET rated 40 V and 116 A (Tc), with 3 W (Ta) and 150 W (Tc) power dissipation, in a surface-mount D²PAK package.

The FDI3632 from onsemi is an N-channel MOSFET rated 100 V, 12 A (Ta) and 80 A (Tc), with 310 W (Tc) power dissipation, in a through-hole I2PAK (TO-262) package.

The STB150NF04 from STMicroelectronics is an N-channel MOSFET rated 40 V and 80 A (Tc), with 300 W (Tc) power dissipation, in a surface-mount D2PAK package.